Investigation of the Influence of Zn-diffusion profile on the electrical properties of InGaAs/InP photodiodes

Dark current is a drastic specification for any kind of sensor and particularly for imagers dedicated to low light level. We propose here a method for optimizing the InGaAs photodiode properties. An anomalous doping profile feature revealed by scanning capacitance microscopy is counterbalanced by mo...

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Bibliographische Detailangaben

Hauptverfasser:	Djedidi, A., Rouvie, A., Reverchon, J. L., Pires, M., Chevalier, N., Mariolle, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Dark current Indium gallium arsenide Indium phosphide Photodiodes Tunneling Zinc
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