Electrical behaviour related to structure of nanostructured GeSi films annealed at 700°C

In this paper we continue the previous investigations on nanostructured Ge x Si 1-x films. The films were deposited by magnetron sputtering and annealed in N 2 atmosphere at 700 °C. Their structure was investigated and correlated with the electrical behavior. For this, conventional and high-resoluti...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lepadatu, A., Stavarache, I., Maraloiu, A., Palade, C., Serban, T. V., Magdalena, C. L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing electrical properties Magnetron sputtering Quantum dots SiGe nanocrystals Silicon Silicon germanium Substrates TEM Temperature measurement
Online-Zugang:	Volltext
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