SiC and Si transistors comparison in boost converter

Development of new wide band gap (WBG) power devices, and among them, of Silicon Carbide (SiC) power devices, has been an active field of research during the last years. Potential advantages SiC devices over their Si counterparts include a significantly higher breakdown field, higher operating tempe...

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Bibliographische Detailangaben

Hauptverfasser:	Zapico, A., Gabiola, I., Apiñaniz, S., Santiago, F., Pujana, A., Rodriguez, A., Briz, F.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Insulated gate bipolar transistors JFETs MOSFET circuits power electronics Semiconductor devices SiC devices Silicon Silicon carbide Switching frequency
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