GaN Power Transistor Modeling for High-Speed Converter Circuit Design

A circuit simulator has been developed to design power losses of high-frequency power converters using GaN-based heterojunction field-effect transistors (GaN-HFETs). The simulator is based on a high-accuracy equivalent model of GaN-HFETs with peculiar device physics and high-speed loss calculation m...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2013-02, Vol.60 (2), p.646-652
Hauptverfasser:	Nakajima, A., Takao, K., Ohashi, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Current measurement Gallium nitride GaN HEMTs heterojunction field-effect transistor (HFET) Integrated circuit modeling Logic gates MODFETs power converters semiconductor device modeling
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!