GaN Power Transistor Modeling for High-Speed Converter Circuit Design
A circuit simulator has been developed to design power losses of high-frequency power converters using GaN-based heterojunction field-effect transistors (GaN-HFETs). The simulator is based on a high-accuracy equivalent model of GaN-HFETs with peculiar device physics and high-speed loss calculation m...
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| Veröffentlicht in: | IEEE transactions on electron devices 2013-02, Vol.60 (2), p.646-652 |
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| container_title | IEEE transactions on electron devices |
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| creator | Nakajima, A. Takao, K. Ohashi, H. |
| description | A circuit simulator has been developed to design power losses of high-frequency power converters using GaN-based heterojunction field-effect transistors (GaN-HFETs). The simulator is based on a high-accuracy equivalent model of GaN-HFETs with peculiar device physics and high-speed loss calculation methods. The simulated power losses were consistent with measured results in dc-dc converters constructed by a GaN-HFET and a SiC Schottky diode with more than 93% accuracy. By utilizing the developed simulator, key requirements in heat-dissipation technologies, circuit parasitic inductances, and gate-drive technologies for next-generation converters are discussed. |
| doi_str_mv | 10.1109/TED.2012.2226180 |
| format | Article |
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The simulator is based on a high-accuracy equivalent model of GaN-HFETs with peculiar device physics and high-speed loss calculation methods. The simulated power losses were consistent with measured results in dc-dc converters constructed by a GaN-HFET and a SiC Schottky diode with more than 93% accuracy. By utilizing the developed simulator, key requirements in heat-dissipation technologies, circuit parasitic inductances, and gate-drive technologies for next-generation converters are discussed.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2012.2226180</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Current measurement ; Gallium nitride ; GaN ; HEMTs ; heterojunction field-effect transistor (HFET) ; Integrated circuit modeling ; Logic gates ; MODFETs ; power converters ; semiconductor device modeling</subject><ispartof>IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.646-652</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c329t-2c52311111208e50a0b68d917df7ec98337cb35c42df634c6e30c11dbd591b3d3</citedby><cites>FETCH-LOGICAL-c329t-2c52311111208e50a0b68d917df7ec98337cb35c42df634c6e30c11dbd591b3d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6392235$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6392235$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nakajima, A.</creatorcontrib><creatorcontrib>Takao, K.</creatorcontrib><creatorcontrib>Ohashi, H.</creatorcontrib><title>GaN Power Transistor Modeling for High-Speed Converter Circuit Design</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A circuit simulator has been developed to design power losses of high-frequency power converters using GaN-based heterojunction field-effect transistors (GaN-HFETs). The simulator is based on a high-accuracy equivalent model of GaN-HFETs with peculiar device physics and high-speed loss calculation methods. The simulated power losses were consistent with measured results in dc-dc converters constructed by a GaN-HFET and a SiC Schottky diode with more than 93% accuracy. By utilizing the developed simulator, key requirements in heat-dissipation technologies, circuit parasitic inductances, and gate-drive technologies for next-generation converters are discussed.</description><subject>Capacitance</subject><subject>Current measurement</subject><subject>Gallium nitride</subject><subject>GaN</subject><subject>HEMTs</subject><subject>heterojunction field-effect transistor (HFET)</subject><subject>Integrated circuit modeling</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>power converters</subject><subject>semiconductor device modeling</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE9Lw0AUxBdRsFbvgpd8gdTd97Kb7FHS2gr1DxjPIdl9iSs1KbtR8dub0OJchoGZOfwYuxZ8IQTXt8VquQAuYAEASmT8hM2ElGmsVaJO2YxzkcUaMzxnFyF8jFElCczYal09RS_9D_mo8FUXXBh6Hz32lnaua6NmDBvXvseveyIb5X33TX4Yy7nz5ssN0ZKCa7tLdtZUu0BXR5-zt_tVkW_i7fP6Ib_bxgZBDzEYCSgmAc9I8orXKrNapLZJyegMMTU1SpOAbRQmRhFyI4StrdSiRotzxg-_xvcheGrKvXeflf8tBS8nDOWIoZwwlEcM4-TmMHFE9F9XqAFQ4h_HjVfU</recordid><startdate>20130201</startdate><enddate>20130201</enddate><creator>Nakajima, A.</creator><creator>Takao, K.</creator><creator>Ohashi, H.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130201</creationdate><title>GaN Power Transistor Modeling for High-Speed Converter Circuit Design</title><author>Nakajima, A. ; Takao, K. ; Ohashi, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-2c52311111208e50a0b68d917df7ec98337cb35c42df634c6e30c11dbd591b3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Capacitance</topic><topic>Current measurement</topic><topic>Gallium nitride</topic><topic>GaN</topic><topic>HEMTs</topic><topic>heterojunction field-effect transistor (HFET)</topic><topic>Integrated circuit modeling</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>power converters</topic><topic>semiconductor device modeling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakajima, A.</creatorcontrib><creatorcontrib>Takao, K.</creatorcontrib><creatorcontrib>Ohashi, H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nakajima, A.</au><au>Takao, K.</au><au>Ohashi, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaN Power Transistor Modeling for High-Speed Converter Circuit Design</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2013-02-01</date><risdate>2013</risdate><volume>60</volume><issue>2</issue><spage>646</spage><epage>652</epage><pages>646-652</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A circuit simulator has been developed to design power losses of high-frequency power converters using GaN-based heterojunction field-effect transistors (GaN-HFETs). The simulator is based on a high-accuracy equivalent model of GaN-HFETs with peculiar device physics and high-speed loss calculation methods. The simulated power losses were consistent with measured results in dc-dc converters constructed by a GaN-HFET and a SiC Schottky diode with more than 93% accuracy. By utilizing the developed simulator, key requirements in heat-dissipation technologies, circuit parasitic inductances, and gate-drive technologies for next-generation converters are discussed.</abstract><pub>IEEE</pub><doi>10.1109/TED.2012.2226180</doi><tpages>7</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Capacitance Current measurement Gallium nitride GaN HEMTs heterojunction field-effect transistor (HFET) Integrated circuit modeling Logic gates MODFETs power converters semiconductor device modeling |
| title | GaN Power Transistor Modeling for High-Speed Converter Circuit Design |
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