A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs

On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high-electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure...

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Veröffentlicht in:	IEEE electron device letters 2013-01, Vol.34 (1), p.30-32
Hauptverfasser:	Kwan, A. M. H., Chen, K. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride D-HEMTs Gallium nitride High-voltage gate drive Logic gates MODFETs monolithic integration of enhancement-/depletion-mode (E/D-mode) AlGaN/GaN high-electron mobility transistor (HEMT) reliability Threshold voltage
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