A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs

On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high-electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2013-01, Vol.34 (1), p.30-32
Hauptverfasser:	Kwan, A. M. H., Chen, K. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride D-HEMTs Gallium nitride High-voltage gate drive Logic gates MODFETs monolithic integration of enhancement-/depletion-mode (E/D-mode) AlGaN/GaN high-electron mobility transistor (HEMT) reliability Threshold voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	32
container_issue	1
container_start_page	30
container_title	IEEE electron device letters
container_volume	34
creator	Kwan, A. M. H. Chen, K. J.
description	On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high-electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure observed) and improved reliability (no observable shifting of the threshold voltage), and the breakdown voltage is not sacrificed. Such a protection scheme with a wide input gate bias range also facilitates simple and reliable connections between the gate driver circuits and the power switches without the level shifter circuits for conventional GaN Schottky gate power HEMTs.
doi_str_mv	10.1109/LED.2012.2224632
format	Article
fullrecord	<record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_ieee_primary_6365744</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6365744</ieee_id><sourcerecordid>10_1109_LED_2012_2224632</sourcerecordid><originalsourceid>FETCH-LOGICAL-c263t-b197db596ded86d5b0b5d391186a7486599327a768f5f6f61953391ca5c1202e3</originalsourceid><addsrcrecordid>eNo9kE1PwjAcxhujiYjeTbz0Cwz63vVIcALJEGPwvHTtf6FmbNhNEr69IxAPT57D83L4IfRMyYRSYqZ59jphhLIJY0wozm7QiEqZJkQqfotGRAuacErUPXroum9CqBBajFA5wwvbA94cIfoYjoA_YtuD60Pb4C24XRN-fgFXbcSr_SG2R_D4E-pgy1CH_oRDg2f1wr5PB-Gs2dnGwR6aPlm3HvAyW2-7R3RX2bqDp6uP0ddbtp0vk3yzWM1neeKY4n1SUqN9KY3y4FPlZUlK6bmhNFVWi1RJYzjTVqu0kpWqFDWSD7Gz0lFGGPAxIpdfF9uui1AVhxj2Np4KSoozo2JgVJwZFVdGw-TlMgkA8F9XXEktBP8DphFhTA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs</title><source>IEEE Electronic Library (IEL)</source><creator>Kwan, A. M. H. ; Chen, K. J.</creator><creatorcontrib>Kwan, A. M. H. ; Chen, K. J.</creatorcontrib><description>On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high-electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure observed) and improved reliability (no observable shifting of the threshold voltage), and the breakdown voltage is not sacrificed. Such a protection scheme with a wide input gate bias range also facilitates simple and reliable connections between the gate driver circuits and the power switches without the level shifter circuits for conventional GaN Schottky gate power HEMTs.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2012.2224632</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum gallium nitride ; D-HEMTs ; Gallium nitride ; High-voltage gate drive ; Logic gates ; MODFETs ; monolithic integration of enhancement-/depletion-mode (E/D-mode) AlGaN/GaN high-electron mobility transistor (HEMT) ; reliability ; Threshold voltage</subject><ispartof>IEEE electron device letters, 2013-01, Vol.34 (1), p.30-32</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-b197db596ded86d5b0b5d391186a7486599327a768f5f6f61953391ca5c1202e3</citedby><cites>FETCH-LOGICAL-c263t-b197db596ded86d5b0b5d391186a7486599327a768f5f6f61953391ca5c1202e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6365744$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6365744$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kwan, A. M. H.</creatorcontrib><creatorcontrib>Chen, K. J.</creatorcontrib><title>A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high-electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure observed) and improved reliability (no observable shifting of the threshold voltage), and the breakdown voltage is not sacrificed. Such a protection scheme with a wide input gate bias range also facilitates simple and reliable connections between the gate driver circuits and the power switches without the level shifter circuits for conventional GaN Schottky gate power HEMTs.</description><subject>Aluminum gallium nitride</subject><subject>D-HEMTs</subject><subject>Gallium nitride</subject><subject>High-voltage gate drive</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>monolithic integration of enhancement-/depletion-mode (E/D-mode) AlGaN/GaN high-electron mobility transistor (HEMT)</subject><subject>reliability</subject><subject>Threshold voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PwjAcxhujiYjeTbz0Cwz63vVIcALJEGPwvHTtf6FmbNhNEr69IxAPT57D83L4IfRMyYRSYqZ59jphhLIJY0wozm7QiEqZJkQqfotGRAuacErUPXroum9CqBBajFA5wwvbA94cIfoYjoA_YtuD60Pb4C24XRN-fgFXbcSr_SG2R_D4E-pgy1CH_oRDg2f1wr5PB-Gs2dnGwR6aPlm3HvAyW2-7R3RX2bqDp6uP0ddbtp0vk3yzWM1neeKY4n1SUqN9KY3y4FPlZUlK6bmhNFVWi1RJYzjTVqu0kpWqFDWSD7Gz0lFGGPAxIpdfF9uui1AVhxj2Np4KSoozo2JgVJwZFVdGw-TlMgkA8F9XXEktBP8DphFhTA</recordid><startdate>201301</startdate><enddate>201301</enddate><creator>Kwan, A. M. H.</creator><creator>Chen, K. J.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201301</creationdate><title>A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs</title><author>Kwan, A. M. H. ; Chen, K. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-b197db596ded86d5b0b5d391186a7486599327a768f5f6f61953391ca5c1202e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Aluminum gallium nitride</topic><topic>D-HEMTs</topic><topic>Gallium nitride</topic><topic>High-voltage gate drive</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>monolithic integration of enhancement-/depletion-mode (E/D-mode) AlGaN/GaN high-electron mobility transistor (HEMT)</topic><topic>reliability</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kwan, A. M. H.</creatorcontrib><creatorcontrib>Chen, K. J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kwan, A. M. H.</au><au>Chen, K. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2013-01</date><risdate>2013</risdate><volume>34</volume><issue>1</issue><spage>30</spage><epage>32</epage><pages>30-32</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high-electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure observed) and improved reliability (no observable shifting of the threshold voltage), and the breakdown voltage is not sacrificed. Such a protection scheme with a wide input gate bias range also facilitates simple and reliable connections between the gate driver circuits and the power switches without the level shifter circuits for conventional GaN Schottky gate power HEMTs.</abstract><pub>IEEE</pub><doi>10.1109/LED.2012.2224632</doi><tpages>3</tpages></addata></record>
fulltext	fulltext_linktorsrc
identifier	ISSN: 0741-3106
ispartof	IEEE electron device letters, 2013-01, Vol.34 (1), p.30-32
issn	0741-3106 1558-0563
language	eng
recordid	cdi_ieee_primary_6365744
source	IEEE Electronic Library (IEL)
subjects	Aluminum gallium nitride D-HEMTs Gallium nitride High-voltage gate drive Logic gates MODFETs monolithic integration of enhancement-/depletion-mode (E/D-mode) AlGaN/GaN high-electron mobility transistor (HEMT) reliability Threshold voltage
title	A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T14%3A58%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Gate%20Overdrive%20Protection%20Technique%20for%20Improved%20Reliability%20in%20AlGaN/GaN%20Enhancement-Mode%20HEMTs&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Kwan,%20A.%20M.%20H.&rft.date=2013-01&rft.volume=34&rft.issue=1&rft.spage=30&rft.epage=32&rft.pages=30-32&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2012.2224632&rft_dat=%3Ccrossref_RIE%3E10_1109_LED_2012_2224632%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6365744&rfr_iscdi=true