The Effects of Proton-Defect Interactions on Radiation-Induced Interface-Trap Formation and Annealing

Interface-trap buildup and annealing are examined as a function of temperature, dose rate, and H 2 concentration using a physics-based model. The roles of a number of common oxide defects in radiation-induced interface-trap buildup are evaluated under various conditions. Defects near the interface p...

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Veröffentlicht in:	IEEE transactions on nuclear science 2012-12, Vol.59 (6), p.3087-3092
Hauptverfasser:	Hughart, D. R., Schrimpf, R. D., Fleetwood, D. M., Rowsey, N. L., Law, M. E., Tuttle, B. R., Pantelides, S. T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Construction Defects Degradation Dosage elevated temperature irradiation Hydrogen interface traps low dose rate Mathematical models Oxides Passivation Protons Radiation effects Temperature measurement Trapping
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