Advancing high performance heterogeneous integration through die stacking
This paper describes the industry's first heterogeneous Stacked Silicon Interconnect (SSI) FPGA family (3D integration). Each device is housed in a low-temperature co-fired ceramic (LTCC) package for optimal signal integrity. Inside the package, a heterogeneous IC stack delivers up to 2.78Tb/s...
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creator | Madden, L. Wu, Ephrem Namhoon Kim Banijamali, B. Abugharbieh, K. Ramalingam, S. Xin Wu |
description | This paper describes the industry's first heterogeneous Stacked Silicon Interconnect (SSI) FPGA family (3D integration). Each device is housed in a low-temperature co-fired ceramic (LTCC) package for optimal signal integrity. Inside the package, a heterogeneous IC stack delivers up to 2.78Tb/s transceiver bandwidth. The resulting bandwidth is approximately three times that achievable in a monolithic solution. Mounted on a passive silicon interposer with through-silicon vias (TSVs), the heterogeneous IC stack comprises FPGA ICs with 13.1-Gb/s transceivers and dedicated analog ICs with 28-Gb/s transceivers. Optimization took place concurrently on multiple facets of the design which were necessary to successfully implement the 3-D integration. In particular, this paper outlines the choices that were made in terms of package substrate material and interposer resistivity in order to optimize 28Gb/s system channel characteristics. These choices were validated through extensive electrical simulation and test chip correlation. In addition, this paper describes the design and timing verification of inter-die interconnects, an area that the electronic design automation industry had not yet fully addressed. This paper further describes 3D thermal-mechanical modeling and analysis for package reliability. The modeling was performed to address package coplanarity issues and stresses imposed by the interposer on the active dice, the low-k dielectric material, the micro-bumps and the C4 attach. The results indicate heterogeneous stacked-silicon (3D) integration is a reliable method to build very high-bandwidth multi-chip devices that exceed current monolithic capabilities. |
doi_str_mv | 10.1109/ESSDERC.2012.6343325 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6343325</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6343325</ieee_id><sourcerecordid>6343325</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-111920cbe004d3e04f857636df7c6cc9575e24b4be1e8c018b995dd90ca344383</originalsourceid><addsrcrecordid>eNpVkE9Lw0AUxFdUsNZ-Aj3kCyS-l7fZP8cSqxYKgu29JJuXZNUmZZMKfnsD9uJpmOE3cxghHhASRLCPq-32afWeJylgmiiSRGl2IRZWG5RKE2pQePnPa3MlZmgJYmO0uhG3w_ABkBFJMxPrZfVddM53TdT6po2OHOo-HKaIo5ZHDn3DHfenIfLdyE0oRt930diG_jTRledoGAv3OfXvxHVdfA28OOtc7J5Xu_w13ry9rPPlJvYWxhgRbQquZABZEYOsTaYVqarWTjlnM51xKktZMrJxgKa0NqsqC64gKcnQXNz_zXpm3h-DPxThZ38-gn4BVX9Q0g</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Advancing high performance heterogeneous integration through die stacking</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Madden, L. ; Wu, Ephrem ; Namhoon Kim ; Banijamali, B. ; Abugharbieh, K. ; Ramalingam, S. ; Xin Wu</creator><creatorcontrib>Madden, L. ; Wu, Ephrem ; Namhoon Kim ; Banijamali, B. ; Abugharbieh, K. ; Ramalingam, S. ; Xin Wu</creatorcontrib><description>This paper describes the industry's first heterogeneous Stacked Silicon Interconnect (SSI) FPGA family (3D integration). Each device is housed in a low-temperature co-fired ceramic (LTCC) package for optimal signal integrity. Inside the package, a heterogeneous IC stack delivers up to 2.78Tb/s transceiver bandwidth. The resulting bandwidth is approximately three times that achievable in a monolithic solution. Mounted on a passive silicon interposer with through-silicon vias (TSVs), the heterogeneous IC stack comprises FPGA ICs with 13.1-Gb/s transceivers and dedicated analog ICs with 28-Gb/s transceivers. Optimization took place concurrently on multiple facets of the design which were necessary to successfully implement the 3-D integration. In particular, this paper outlines the choices that were made in terms of package substrate material and interposer resistivity in order to optimize 28Gb/s system channel characteristics. These choices were validated through extensive electrical simulation and test chip correlation. In addition, this paper describes the design and timing verification of inter-die interconnects, an area that the electronic design automation industry had not yet fully addressed. This paper further describes 3D thermal-mechanical modeling and analysis for package reliability. The modeling was performed to address package coplanarity issues and stresses imposed by the interposer on the active dice, the low-k dielectric material, the micro-bumps and the C4 attach. The results indicate heterogeneous stacked-silicon (3D) integration is a reliable method to build very high-bandwidth multi-chip devices that exceed current monolithic capabilities.</description><identifier>ISSN: 1930-8876</identifier><identifier>ISBN: 9781467317078</identifier><identifier>ISBN: 1467317071</identifier><identifier>EISBN: 9781467317061</identifier><identifier>EISBN: 146731708X</identifier><identifier>EISBN: 1467317063</identifier><identifier>EISBN: 9781467317085</identifier><identifier>DOI: 10.1109/ESSDERC.2012.6343325</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Field programmable gate arrays ; Frequency measurement ; Noise ; Silicon ; Substrates ; Transceivers</subject><ispartof>2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012, p.18-24</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6343325$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6343325$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Madden, L.</creatorcontrib><creatorcontrib>Wu, Ephrem</creatorcontrib><creatorcontrib>Namhoon Kim</creatorcontrib><creatorcontrib>Banijamali, B.</creatorcontrib><creatorcontrib>Abugharbieh, K.</creatorcontrib><creatorcontrib>Ramalingam, S.</creatorcontrib><creatorcontrib>Xin Wu</creatorcontrib><title>Advancing high performance heterogeneous integration through die stacking</title><title>2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)</title><addtitle>ESSDERC</addtitle><description>This paper describes the industry's first heterogeneous Stacked Silicon Interconnect (SSI) FPGA family (3D integration). Each device is housed in a low-temperature co-fired ceramic (LTCC) package for optimal signal integrity. Inside the package, a heterogeneous IC stack delivers up to 2.78Tb/s transceiver bandwidth. The resulting bandwidth is approximately three times that achievable in a monolithic solution. Mounted on a passive silicon interposer with through-silicon vias (TSVs), the heterogeneous IC stack comprises FPGA ICs with 13.1-Gb/s transceivers and dedicated analog ICs with 28-Gb/s transceivers. Optimization took place concurrently on multiple facets of the design which were necessary to successfully implement the 3-D integration. In particular, this paper outlines the choices that were made in terms of package substrate material and interposer resistivity in order to optimize 28Gb/s system channel characteristics. These choices were validated through extensive electrical simulation and test chip correlation. In addition, this paper describes the design and timing verification of inter-die interconnects, an area that the electronic design automation industry had not yet fully addressed. This paper further describes 3D thermal-mechanical modeling and analysis for package reliability. The modeling was performed to address package coplanarity issues and stresses imposed by the interposer on the active dice, the low-k dielectric material, the micro-bumps and the C4 attach. The results indicate heterogeneous stacked-silicon (3D) integration is a reliable method to build very high-bandwidth multi-chip devices that exceed current monolithic capabilities.</description><subject>Analytical models</subject><subject>Field programmable gate arrays</subject><subject>Frequency measurement</subject><subject>Noise</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Transceivers</subject><issn>1930-8876</issn><isbn>9781467317078</isbn><isbn>1467317071</isbn><isbn>9781467317061</isbn><isbn>146731708X</isbn><isbn>1467317063</isbn><isbn>9781467317085</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkE9Lw0AUxFdUsNZ-Aj3kCyS-l7fZP8cSqxYKgu29JJuXZNUmZZMKfnsD9uJpmOE3cxghHhASRLCPq-32afWeJylgmiiSRGl2IRZWG5RKE2pQePnPa3MlZmgJYmO0uhG3w_ABkBFJMxPrZfVddM53TdT6po2OHOo-HKaIo5ZHDn3DHfenIfLdyE0oRt930diG_jTRledoGAv3OfXvxHVdfA28OOtc7J5Xu_w13ry9rPPlJvYWxhgRbQquZABZEYOsTaYVqarWTjlnM51xKktZMrJxgKa0NqsqC64gKcnQXNz_zXpm3h-DPxThZ38-gn4BVX9Q0g</recordid><startdate>201209</startdate><enddate>201209</enddate><creator>Madden, L.</creator><creator>Wu, Ephrem</creator><creator>Namhoon Kim</creator><creator>Banijamali, B.</creator><creator>Abugharbieh, K.</creator><creator>Ramalingam, S.</creator><creator>Xin Wu</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201209</creationdate><title>Advancing high performance heterogeneous integration through die stacking</title><author>Madden, L. ; Wu, Ephrem ; Namhoon Kim ; Banijamali, B. ; Abugharbieh, K. ; Ramalingam, S. ; Xin Wu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-111920cbe004d3e04f857636df7c6cc9575e24b4be1e8c018b995dd90ca344383</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Analytical models</topic><topic>Field programmable gate arrays</topic><topic>Frequency measurement</topic><topic>Noise</topic><topic>Silicon</topic><topic>Substrates</topic><topic>Transceivers</topic><toplevel>online_resources</toplevel><creatorcontrib>Madden, L.</creatorcontrib><creatorcontrib>Wu, Ephrem</creatorcontrib><creatorcontrib>Namhoon Kim</creatorcontrib><creatorcontrib>Banijamali, B.</creatorcontrib><creatorcontrib>Abugharbieh, K.</creatorcontrib><creatorcontrib>Ramalingam, S.</creatorcontrib><creatorcontrib>Xin Wu</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Madden, L.</au><au>Wu, Ephrem</au><au>Namhoon Kim</au><au>Banijamali, B.</au><au>Abugharbieh, K.</au><au>Ramalingam, S.</au><au>Xin Wu</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Advancing high performance heterogeneous integration through die stacking</atitle><btitle>2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)</btitle><stitle>ESSDERC</stitle><date>2012-09</date><risdate>2012</risdate><spage>18</spage><epage>24</epage><pages>18-24</pages><issn>1930-8876</issn><isbn>9781467317078</isbn><isbn>1467317071</isbn><eisbn>9781467317061</eisbn><eisbn>146731708X</eisbn><eisbn>1467317063</eisbn><eisbn>9781467317085</eisbn><abstract>This paper describes the industry's first heterogeneous Stacked Silicon Interconnect (SSI) FPGA family (3D integration). Each device is housed in a low-temperature co-fired ceramic (LTCC) package for optimal signal integrity. Inside the package, a heterogeneous IC stack delivers up to 2.78Tb/s transceiver bandwidth. The resulting bandwidth is approximately three times that achievable in a monolithic solution. Mounted on a passive silicon interposer with through-silicon vias (TSVs), the heterogeneous IC stack comprises FPGA ICs with 13.1-Gb/s transceivers and dedicated analog ICs with 28-Gb/s transceivers. Optimization took place concurrently on multiple facets of the design which were necessary to successfully implement the 3-D integration. In particular, this paper outlines the choices that were made in terms of package substrate material and interposer resistivity in order to optimize 28Gb/s system channel characteristics. These choices were validated through extensive electrical simulation and test chip correlation. In addition, this paper describes the design and timing verification of inter-die interconnects, an area that the electronic design automation industry had not yet fully addressed. This paper further describes 3D thermal-mechanical modeling and analysis for package reliability. The modeling was performed to address package coplanarity issues and stresses imposed by the interposer on the active dice, the low-k dielectric material, the micro-bumps and the C4 attach. The results indicate heterogeneous stacked-silicon (3D) integration is a reliable method to build very high-bandwidth multi-chip devices that exceed current monolithic capabilities.</abstract><pub>IEEE</pub><doi>10.1109/ESSDERC.2012.6343325</doi><tpages>7</tpages></addata></record> |
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identifier | ISSN: 1930-8876 |
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issn | 1930-8876 |
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subjects | Analytical models Field programmable gate arrays Frequency measurement Noise Silicon Substrates Transceivers |
title | Advancing high performance heterogeneous integration through die stacking |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T02%3A11%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Advancing%20high%20performance%20heterogeneous%20integration%20through%20die%20stacking&rft.btitle=2012%20Proceedings%20of%20the%20European%20Solid-State%20Device%20Research%20Conference%20(ESSDERC)&rft.au=Madden,%20L.&rft.date=2012-09&rft.spage=18&rft.epage=24&rft.pages=18-24&rft.issn=1930-8876&rft.isbn=9781467317078&rft.isbn_list=1467317071&rft_id=info:doi/10.1109/ESSDERC.2012.6343325&rft_dat=%3Cieee_6IE%3E6343325%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781467317061&rft.eisbn_list=146731708X&rft.eisbn_list=1467317063&rft.eisbn_list=9781467317085&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6343325&rfr_iscdi=true |