Description of a GaN transistor quasimonolitic integrated circuit of the 4-18 GHz distilated amplifier

Description of a GaN transistor quasimonolitic integrated circuit of the 4-18 GHz distilated amplifier

A description is given of the results obtained from developing the GaN quasi-monolithic IC (QMIC) for the 4-18 GHz distributed amplifier built upon the AlGaN/AlN/GaN heterostructures grown upon sapphire substrates. Design features and frequency responses are presented.

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Bibliographische Detailangaben
Hauptverfasser: Gulyaev, V. I., Volkhin, A. I., Myakishev, Yu B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Distributed amplifiers
Electronic mail
Gallium arsenide
Gallium nitride
HEMTs
Integrated circuits
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Beschreibung
Zusammenfassung:A description is given of the results obtained from developing the GaN quasi-monolithic IC (QMIC) for the 4-18 GHz distributed amplifier built upon the AlGaN/AlN/GaN heterostructures grown upon sapphire substrates. Design features and frequency responses are presented.