Direct-Grown Air-Void Structure in the InGaN Light-Emitting Diodes
A high-efficiency InGaN light-emitting diode (LED) structure was grown on a silane (SiH 4 )-treated undoped-GaN layer with a thin in situ grown SiN ∞ layer and a 3-D island structure. A lateral one-step epitaxial growth process was performed on the SiH 4 -treated GaN island structure to form a serie...
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| Veröffentlicht in: | IEEE electron device letters 2012-12, Vol.33 (12), p.1738-1740 |
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| container_issue | 12 |
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| container_title | IEEE electron device letters |
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| creator | YANG, Chung-Chieh LIN, Chia-Feng CHEN, Kuei-Ting JIANG, Ren-Hao LIN, Chun-Min |
| description | A high-efficiency InGaN light-emitting diode (LED) structure was grown on a silane (SiH 4 )-treated undoped-GaN layer with a thin in situ grown SiN ∞ layer and a 3-D island structure. A lateral one-step epitaxial growth process was performed on the SiH 4 -treated GaN island structure to form a series-of-embedded-air-void (SEAV) structure. The SEAV structure prevented the dislocation from propagating to the top LED epitaxial layer that reduced the leakage current and increased the internal quantum efficiency of the treated InGaN LED. The light output power of the treated LED had a 68% enhancement compared with that of the standard LED at 20 mA. The high output power and the narrow divergent angle of the treated LED structure were caused by the high light scattering process on the SEAV structure. |
| doi_str_mv | 10.1109/LED.2012.2217392 |
| format | Article |
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A lateral one-step epitaxial growth process was performed on the SiH 4 -treated GaN island structure to form a series-of-embedded-air-void (SEAV) structure. The SEAV structure prevented the dislocation from propagating to the top LED epitaxial layer that reduced the leakage current and increased the internal quantum efficiency of the treated InGaN LED. The light output power of the treated LED had a 68% enhancement compared with that of the standard LED at 20 mA. The high output power and the narrow divergent angle of the treated LED structure were caused by the high light scattering process on the SEAV structure.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2012.2217392</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronics ; Epitaxial growth ; Exact sciences and technology ; Indium gallium nitride ; InGaN ; Leakage current ; Light emitting diodes ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. 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A lateral one-step epitaxial growth process was performed on the SiH 4 -treated GaN island structure to form a series-of-embedded-air-void (SEAV) structure. The SEAV structure prevented the dislocation from propagating to the top LED epitaxial layer that reduced the leakage current and increased the internal quantum efficiency of the treated InGaN LED. The light output power of the treated LED had a 68% enhancement compared with that of the standard LED at 20 mA. The high output power and the narrow divergent angle of the treated LED structure were caused by the high light scattering process on the SEAV structure.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Epitaxial growth</subject><subject>Exact sciences and technology</subject><subject>Indium gallium nitride</subject><subject>InGaN</subject><subject>Leakage current</subject><subject>Light emitting diodes</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>series of embedded air voids (SEAV)</subject><subject>Temperature measurement</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PAjEQQBujiYjeTbz04rFrp5_sEQGRZKMHP66bbmmhBnZJW2L89y6BcJrDvDeZPITugRYAtHyqZtOCUWAFY6B5yS7QAKQcESoVv0QDqgUQDlRdo5uUfigFIbQYoOdpiM5mMo_db4vHIZLvLizxR457m_fR4dDivHZ40c7NG67Cap3JbBtyDu0KT0O3dOkWXXmzSe7uNIfo62X2OXkl1ft8MRlXxLKSZyIFpRxKraRgYGFUQqO4dMZysMpoUEo0bukYSCaFZnrUGFt655nof_fG8yGix7s2dilF5-tdDFsT_2qg9aFB3TeoDw3qU4NeeTwqO5Os2fhoWhvS2WNKqx4VPfdw5IJz7rxWnIOkmv8Ddjliiw</recordid><startdate>20121201</startdate><enddate>20121201</enddate><creator>YANG, Chung-Chieh</creator><creator>LIN, Chia-Feng</creator><creator>CHEN, Kuei-Ting</creator><creator>JIANG, Ren-Hao</creator><creator>LIN, Chun-Min</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20121201</creationdate><title>Direct-Grown Air-Void Structure in the InGaN Light-Emitting Diodes</title><author>YANG, Chung-Chieh ; LIN, Chia-Feng ; CHEN, Kuei-Ting ; JIANG, Ren-Hao ; LIN, Chun-Min</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-5400319765421c1891b635eac31c6a71664bede2152547278bac9fef24074faf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Epitaxial growth</topic><topic>Exact sciences and technology</topic><topic>Indium gallium nitride</topic><topic>InGaN</topic><topic>Leakage current</topic><topic>Light emitting diodes</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>series of embedded air voids (SEAV)</topic><topic>Temperature measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>YANG, Chung-Chieh</creatorcontrib><creatorcontrib>LIN, Chia-Feng</creatorcontrib><creatorcontrib>CHEN, Kuei-Ting</creatorcontrib><creatorcontrib>JIANG, Ren-Hao</creatorcontrib><creatorcontrib>LIN, Chun-Min</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YANG, Chung-Chieh</au><au>LIN, Chia-Feng</au><au>CHEN, Kuei-Ting</au><au>JIANG, Ren-Hao</au><au>LIN, Chun-Min</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct-Grown Air-Void Structure in the InGaN Light-Emitting Diodes</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2012-12-01</date><risdate>2012</risdate><volume>33</volume><issue>12</issue><spage>1738</spage><epage>1740</epage><pages>1738-1740</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A high-efficiency InGaN light-emitting diode (LED) structure was grown on a silane (SiH 4 )-treated undoped-GaN layer with a thin in situ grown SiN ∞ layer and a 3-D island structure. A lateral one-step epitaxial growth process was performed on the SiH 4 -treated GaN island structure to form a series-of-embedded-air-void (SEAV) structure. The SEAV structure prevented the dislocation from propagating to the top LED epitaxial layer that reduced the leakage current and increased the internal quantum efficiency of the treated InGaN LED. The light output power of the treated LED had a 68% enhancement compared with that of the standard LED at 20 mA. The high output power and the narrow divergent angle of the treated LED structure were caused by the high light scattering process on the SEAV structure.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2012.2217392</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2012-12, Vol.33 (12), p.1738-1740 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electronics Epitaxial growth Exact sciences and technology Indium gallium nitride InGaN Leakage current Light emitting diodes Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices series of embedded air voids (SEAV) Temperature measurement |
| title | Direct-Grown Air-Void Structure in the InGaN Light-Emitting Diodes |
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