Direct band-gap electroluminescence from strained n-doped Germanium diodes

The fabrication and characterisation of LED structures made of Ge grown on Si substrates is reported. The structures are circular mesa of strained n-Ge etched down to an undoped buffer of Ge. The electroluminescence exhibit average power levels at 1.7 μm of 10 μW, many orders of magnitude larger tha...

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Bibliographische Detailangaben

Hauptverfasser:	Velha, P., Gallacher, K., Dumas, D., Paul, D. J., Myronov, M., Leadley, D. R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Current measurement Educational institutions Electroluminescence Light emitting diodes Photonic band gap Silicon Temperature measurement
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