Characterization of large area Cu(In,Ga)Se2 nanotip arrays via photoluminescence
In this study, photoluminescence (PL) measurements were used to characterized Cu(In,Ga)Se 2 nanotip arrays (CIGS NTRs). Large area CIGS NTRs were yielded by using one step Ar + milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaterna...
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| creator | Yu-Kuang Liao Woei-Tyng Lin Dan-Hua Hsieh Shou-Yi Kuo Fang-I Lai Yu-Lun Chueh Hao-Chung Kuo |
| description | In this study, photoluminescence (PL) measurements were used to characterized Cu(In,Ga)Se 2 nanotip arrays (CIGS NTRs). Large area CIGS NTRs were yielded by using one step Ar + milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaternary components compound. In both CIGS thin films with and without NTRs, saturation effects of Donor-Acceptor Pair (DAP) had been observed while excitation power dependence PL measurements. Comparing with thin film CIGS without NTRs, it has revealed that the concentration DAP had been changed after formation of CIGS NTRs and had enhanced its carrier density of the p-type semiconductor. |
| doi_str_mv | 10.1109/NANO.2012.6322062 |
| format | Conference Proceeding |
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Large area CIGS NTRs were yielded by using one step Ar + milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaternary components compound. In both CIGS thin films with and without NTRs, saturation effects of Donor-Acceptor Pair (DAP) had been observed while excitation power dependence PL measurements. Comparing with thin film CIGS without NTRs, it has revealed that the concentration DAP had been changed after formation of CIGS NTRs and had enhanced its carrier density of the p-type semiconductor.</description><identifier>ISSN: 1944-9399</identifier><identifier>ISBN: 9781467321983</identifier><identifier>ISBN: 1467321982</identifier><identifier>EISSN: 1944-9380</identifier><identifier>EISBN: 1467321990</identifier><identifier>EISBN: 1467322008</identifier><identifier>EISBN: 9781467321990</identifier><identifier>EISBN: 9781467322003</identifier><identifier>DOI: 10.1109/NANO.2012.6322062</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge carrier density ; CIGS ; Density measurement ; Milling ; nanotips ; photoluminescence ; Photovoltaic cells ; Power measurement ; saturation ; Temperature measurement</subject><ispartof>2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO), 2012, p.1-2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6322062$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6322062$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yu-Kuang Liao</creatorcontrib><creatorcontrib>Woei-Tyng Lin</creatorcontrib><creatorcontrib>Dan-Hua Hsieh</creatorcontrib><creatorcontrib>Shou-Yi Kuo</creatorcontrib><creatorcontrib>Fang-I Lai</creatorcontrib><creatorcontrib>Yu-Lun Chueh</creatorcontrib><creatorcontrib>Hao-Chung Kuo</creatorcontrib><title>Characterization of large area Cu(In,Ga)Se2 nanotip arrays via photoluminescence</title><title>2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)</title><addtitle>NANO</addtitle><description>In this study, photoluminescence (PL) measurements were used to characterized Cu(In,Ga)Se 2 nanotip arrays (CIGS NTRs). Large area CIGS NTRs were yielded by using one step Ar + milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaternary components compound. In both CIGS thin films with and without NTRs, saturation effects of Donor-Acceptor Pair (DAP) had been observed while excitation power dependence PL measurements. Comparing with thin film CIGS without NTRs, it has revealed that the concentration DAP had been changed after formation of CIGS NTRs and had enhanced its carrier density of the p-type semiconductor.</description><subject>Charge carrier density</subject><subject>CIGS</subject><subject>Density measurement</subject><subject>Milling</subject><subject>nanotips</subject><subject>photoluminescence</subject><subject>Photovoltaic cells</subject><subject>Power measurement</subject><subject>saturation</subject><subject>Temperature measurement</subject><issn>1944-9399</issn><issn>1944-9380</issn><isbn>9781467321983</isbn><isbn>1467321982</isbn><isbn>1467321990</isbn><isbn>1467322008</isbn><isbn>9781467321990</isbn><isbn>9781467322003</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AYhNcvsNb8APGyRwVT9yvbfY8laC2UVrD38jZ9166kSdmkhfrrDVidyxweGGaGsTspBlIKeJ6NZvOBElINrFZKWHXGbqSxQ60kgDhnPQnGpKCduGAJDN0fc_rynwFcs6RpvkQnp6SRosfe8w1GLFqK4RvbUFe89rzE-EkcIyHP9w-T6mmMjx-keIVV3YZdRyIeG34IyHebuq3L_TZU1BRUFXTLrjyWDSUn77PF68sif0un8_EkH03TAKJNu25O41BI43DtPRE4KoAE-G6NJIQMC2NxZS2iVw7MWq-U9c4W2cqrLNN9dv8bG4houYthi_G4PH2jfwBVT1PD</recordid><startdate>201208</startdate><enddate>201208</enddate><creator>Yu-Kuang Liao</creator><creator>Woei-Tyng Lin</creator><creator>Dan-Hua Hsieh</creator><creator>Shou-Yi Kuo</creator><creator>Fang-I Lai</creator><creator>Yu-Lun Chueh</creator><creator>Hao-Chung Kuo</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201208</creationdate><title>Characterization of large area Cu(In,Ga)Se2 nanotip arrays via photoluminescence</title><author>Yu-Kuang Liao ; Woei-Tyng Lin ; Dan-Hua Hsieh ; Shou-Yi Kuo ; Fang-I Lai ; Yu-Lun Chueh ; Hao-Chung Kuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-73283a70148adffee98ec9e09f9901ea95ac46ab66aaf2894d3b26f86c5bf2553</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Charge carrier density</topic><topic>CIGS</topic><topic>Density measurement</topic><topic>Milling</topic><topic>nanotips</topic><topic>photoluminescence</topic><topic>Photovoltaic cells</topic><topic>Power measurement</topic><topic>saturation</topic><topic>Temperature measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Yu-Kuang Liao</creatorcontrib><creatorcontrib>Woei-Tyng Lin</creatorcontrib><creatorcontrib>Dan-Hua Hsieh</creatorcontrib><creatorcontrib>Shou-Yi Kuo</creatorcontrib><creatorcontrib>Fang-I Lai</creatorcontrib><creatorcontrib>Yu-Lun Chueh</creatorcontrib><creatorcontrib>Hao-Chung Kuo</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yu-Kuang Liao</au><au>Woei-Tyng Lin</au><au>Dan-Hua Hsieh</au><au>Shou-Yi Kuo</au><au>Fang-I Lai</au><au>Yu-Lun Chueh</au><au>Hao-Chung Kuo</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Characterization of large area Cu(In,Ga)Se2 nanotip arrays via photoluminescence</atitle><btitle>2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)</btitle><stitle>NANO</stitle><date>2012-08</date><risdate>2012</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><issn>1944-9399</issn><eissn>1944-9380</eissn><isbn>9781467321983</isbn><isbn>1467321982</isbn><eisbn>1467321990</eisbn><eisbn>1467322008</eisbn><eisbn>9781467321990</eisbn><eisbn>9781467322003</eisbn><abstract>In this study, photoluminescence (PL) measurements were used to characterized Cu(In,Ga)Se 2 nanotip arrays (CIGS NTRs). Large area CIGS NTRs were yielded by using one step Ar + milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaternary components compound. In both CIGS thin films with and without NTRs, saturation effects of Donor-Acceptor Pair (DAP) had been observed while excitation power dependence PL measurements. Comparing with thin film CIGS without NTRs, it has revealed that the concentration DAP had been changed after formation of CIGS NTRs and had enhanced its carrier density of the p-type semiconductor.</abstract><pub>IEEE</pub><doi>10.1109/NANO.2012.6322062</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 1944-9399 |
| ispartof | 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO), 2012, p.1-2 |
| issn | 1944-9399 1944-9380 |
| language | eng |
| recordid | cdi_ieee_primary_6322062 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Charge carrier density CIGS Density measurement Milling nanotips photoluminescence Photovoltaic cells Power measurement saturation Temperature measurement |
| title | Characterization of large area Cu(In,Ga)Se2 nanotip arrays via photoluminescence |
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