A novel approach for modeling and simulation of a-Si/c-Si1−xGex/c-Si hetrostructure thin-film solar cells

Numerical simulation of a-Si/c-Si 1-x Ge x /c-Si hetrostructure was performed. Advanced modeling and simulation tools were used for this study. It was found that p-Si 1-x Ge x film can play a critical role to improve the light absorption properties of the design structure. Study was performed for va...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Khan, M. K., Ehsan, M. A., Keller, C., Dongming Mei
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	dark current Indexes multi-junction nanotechnologies number of junctions optical confinement photovoltaic Radiative recombination short circuit current Silicon
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