A novel approach for modeling and simulation of a-Si/c-Si1−xGex/c-Si hetrostructure thin-film solar cells
Numerical simulation of a-Si/c-Si 1-x Ge x /c-Si hetrostructure was performed. Advanced modeling and simulation tools were used for this study. It was found that p-Si 1-x Ge x film can play a critical role to improve the light absorption properties of the design structure. Study was performed for va...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 001962 |
|---|---|
| container_issue | |
| container_start_page | 001958 |
| container_title | |
| container_volume | |
| creator | Khan, M. K. Ehsan, M. A. Keller, C. Dongming Mei |
| description | Numerical simulation of a-Si/c-Si 1-x Ge x /c-Si hetrostructure was performed. Advanced modeling and simulation tools were used for this study. It was found that p-Si 1-x Ge x film can play a critical role to improve the light absorption properties of the design structure. Study was performed for varying thickness of Si 1-x Ge x alloyed layer, where, Ge composition was kept constant ~10% throughout. An approach relying on the phenomena of improved absorption properties that corresponds to the gain in the short-circuit current was explored. Numerical results showed that for p-Si 1-x Ge x thickness ~5°m, n + and p + doping concentrations ~2×10 19 cm -3 and ~2×10 18 cm -3 , an efficiency ~19.07% was obtained. |
| doi_str_mv | 10.1109/PVSC.2012.6317979 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6317979</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6317979</ieee_id><sourcerecordid>6317979</sourcerecordid><originalsourceid>FETCH-ieee_primary_63179793</originalsourceid><addsrcrecordid>eNp9j01OwzAQRo0oEm3pARCbuUDSmbiymyWq-FkiFbGtrHRCDI4d2Q4qN2DNETkJCJUtm_fp6Vs9IS4JSyKslw9P201ZIVWlkqRrXZ-IGa2UlohK6VOxqPX6z1dyIqZICou11HQuZim9IFYoFU3F6zX48MYOzDDEYJoO2hChD3t21j-D8XtIth-dyTZ4CC2YYmuXzQ_o6-PzcMeHX4GOcwwpx7HJY2TInfVFa10PKTgToWHn0oU4a41LvDjuXFzd3jxu7gvLzLsh2t7E990xSP7_fgPOzUz8</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A novel approach for modeling and simulation of a-Si/c-Si1−xGex/c-Si hetrostructure thin-film solar cells</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Khan, M. K. ; Ehsan, M. A. ; Keller, C. ; Dongming Mei</creator><creatorcontrib>Khan, M. K. ; Ehsan, M. A. ; Keller, C. ; Dongming Mei</creatorcontrib><description>Numerical simulation of a-Si/c-Si 1-x Ge x /c-Si hetrostructure was performed. Advanced modeling and simulation tools were used for this study. It was found that p-Si 1-x Ge x film can play a critical role to improve the light absorption properties of the design structure. Study was performed for varying thickness of Si 1-x Ge x alloyed layer, where, Ge composition was kept constant ~10% throughout. An approach relying on the phenomena of improved absorption properties that corresponds to the gain in the short-circuit current was explored. Numerical results showed that for p-Si 1-x Ge x thickness ~5°m, n + and p + doping concentrations ~2×10 19 cm -3 and ~2×10 18 cm -3 , an efficiency ~19.07% was obtained.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 9781467300643</identifier><identifier>ISBN: 1467300640</identifier><identifier>EISBN: 1467300667</identifier><identifier>EISBN: 1467300659</identifier><identifier>EISBN: 9781467300650</identifier><identifier>EISBN: 9781467300667</identifier><identifier>DOI: 10.1109/PVSC.2012.6317979</identifier><language>eng</language><publisher>IEEE</publisher><subject>dark current ; Indexes ; multi-junction ; nanotechnologies ; number of junctions ; optical confinement ; photovoltaic ; Radiative recombination ; short circuit current ; Silicon</subject><ispartof>2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.001958-001962</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6317979$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6317979$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Khan, M. K.</creatorcontrib><creatorcontrib>Ehsan, M. A.</creatorcontrib><creatorcontrib>Keller, C.</creatorcontrib><creatorcontrib>Dongming Mei</creatorcontrib><title>A novel approach for modeling and simulation of a-Si/c-Si1−xGex/c-Si hetrostructure thin-film solar cells</title><title>2012 38th IEEE Photovoltaic Specialists Conference</title><addtitle>PVSC</addtitle><description>Numerical simulation of a-Si/c-Si 1-x Ge x /c-Si hetrostructure was performed. Advanced modeling and simulation tools were used for this study. It was found that p-Si 1-x Ge x film can play a critical role to improve the light absorption properties of the design structure. Study was performed for varying thickness of Si 1-x Ge x alloyed layer, where, Ge composition was kept constant ~10% throughout. An approach relying on the phenomena of improved absorption properties that corresponds to the gain in the short-circuit current was explored. Numerical results showed that for p-Si 1-x Ge x thickness ~5°m, n + and p + doping concentrations ~2×10 19 cm -3 and ~2×10 18 cm -3 , an efficiency ~19.07% was obtained.</description><subject>dark current</subject><subject>Indexes</subject><subject>multi-junction</subject><subject>nanotechnologies</subject><subject>number of junctions</subject><subject>optical confinement</subject><subject>photovoltaic</subject><subject>Radiative recombination</subject><subject>short circuit current</subject><subject>Silicon</subject><issn>0160-8371</issn><isbn>9781467300643</isbn><isbn>1467300640</isbn><isbn>1467300667</isbn><isbn>1467300659</isbn><isbn>9781467300650</isbn><isbn>9781467300667</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9j01OwzAQRo0oEm3pARCbuUDSmbiymyWq-FkiFbGtrHRCDI4d2Q4qN2DNETkJCJUtm_fp6Vs9IS4JSyKslw9P201ZIVWlkqRrXZ-IGa2UlohK6VOxqPX6z1dyIqZICou11HQuZim9IFYoFU3F6zX48MYOzDDEYJoO2hChD3t21j-D8XtIth-dyTZ4CC2YYmuXzQ_o6-PzcMeHX4GOcwwpx7HJY2TInfVFa10PKTgToWHn0oU4a41LvDjuXFzd3jxu7gvLzLsh2t7E990xSP7_fgPOzUz8</recordid><startdate>201206</startdate><enddate>201206</enddate><creator>Khan, M. K.</creator><creator>Ehsan, M. A.</creator><creator>Keller, C.</creator><creator>Dongming Mei</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201206</creationdate><title>A novel approach for modeling and simulation of a-Si/c-Si1−xGex/c-Si hetrostructure thin-film solar cells</title><author>Khan, M. K. ; Ehsan, M. A. ; Keller, C. ; Dongming Mei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_63179793</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>dark current</topic><topic>Indexes</topic><topic>multi-junction</topic><topic>nanotechnologies</topic><topic>number of junctions</topic><topic>optical confinement</topic><topic>photovoltaic</topic><topic>Radiative recombination</topic><topic>short circuit current</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Khan, M. K.</creatorcontrib><creatorcontrib>Ehsan, M. A.</creatorcontrib><creatorcontrib>Keller, C.</creatorcontrib><creatorcontrib>Dongming Mei</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Khan, M. K.</au><au>Ehsan, M. A.</au><au>Keller, C.</au><au>Dongming Mei</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A novel approach for modeling and simulation of a-Si/c-Si1−xGex/c-Si hetrostructure thin-film solar cells</atitle><btitle>2012 38th IEEE Photovoltaic Specialists Conference</btitle><stitle>PVSC</stitle><date>2012-06</date><risdate>2012</risdate><spage>001958</spage><epage>001962</epage><pages>001958-001962</pages><issn>0160-8371</issn><isbn>9781467300643</isbn><isbn>1467300640</isbn><eisbn>1467300667</eisbn><eisbn>1467300659</eisbn><eisbn>9781467300650</eisbn><eisbn>9781467300667</eisbn><abstract>Numerical simulation of a-Si/c-Si 1-x Ge x /c-Si hetrostructure was performed. Advanced modeling and simulation tools were used for this study. It was found that p-Si 1-x Ge x film can play a critical role to improve the light absorption properties of the design structure. Study was performed for varying thickness of Si 1-x Ge x alloyed layer, where, Ge composition was kept constant ~10% throughout. An approach relying on the phenomena of improved absorption properties that corresponds to the gain in the short-circuit current was explored. Numerical results showed that for p-Si 1-x Ge x thickness ~5°m, n + and p + doping concentrations ~2×10 19 cm -3 and ~2×10 18 cm -3 , an efficiency ~19.07% was obtained.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.2012.6317979</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0160-8371 |
| ispartof | 2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.001958-001962 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_6317979 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | dark current Indexes multi-junction nanotechnologies number of junctions optical confinement photovoltaic Radiative recombination short circuit current Silicon |
| title | A novel approach for modeling and simulation of a-Si/c-Si1−xGex/c-Si hetrostructure thin-film solar cells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T05%3A44%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20novel%20approach%20for%20modeling%20and%20simulation%20of%20a-Si/c-Si1%E2%88%92xGex/c-Si%20hetrostructure%20thin-film%20solar%20cells&rft.btitle=2012%2038th%20IEEE%20Photovoltaic%20Specialists%20Conference&rft.au=Khan,%20M.%20K.&rft.date=2012-06&rft.spage=001958&rft.epage=001962&rft.pages=001958-001962&rft.issn=0160-8371&rft.isbn=9781467300643&rft.isbn_list=1467300640&rft_id=info:doi/10.1109/PVSC.2012.6317979&rft_dat=%3Cieee_6IE%3E6317979%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1467300667&rft.eisbn_list=1467300659&rft.eisbn_list=9781467300650&rft.eisbn_list=9781467300667&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6317979&rfr_iscdi=true |