Growth and characterization of III-nitride based multiple quantum wells for photovoltaic devices
Efficient conversion of solar energy into electricity is crucial to the use of renewable energy. Among the various semiconductors being investigated for photovoltaic conversion, III- nitrides are fervently pursued because of their band gap tenability from 0.65 eV to 3.4 eV by adjusting the indium co...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 001939 |
|---|---|
| container_issue | |
| container_start_page | 001937 |
| container_title | |
| container_volume | |
| creator | Wadekar, P. V. Huang, H.C. Chang, C. W. Dung, T. W. Lin, Y. T. Chen, Q. Y. Chou, M. C. Feng, S. W. Tu, L. W. Hu, N.J. Wijesundera, D. Chu, W.K. |
| description | Efficient conversion of solar energy into electricity is crucial to the use of renewable energy. Among the various semiconductors being investigated for photovoltaic conversion, III- nitrides are fervently pursued because of their band gap tenability from 0.65 eV to 3.4 eV by adjusting the indium concentration of In X Ga 1−X N alloys. This enables the coverage of optical absorption over a wide range of the solar spectrum, thus providing a path to boosting the conversion efficiency. This presentation reports on multiple quantum well (MQW) based solar cells fabricated on LiGaO 2 (00l) substrates by plasma assisted molecular beam epitaxy (PA-MBE). Metal-modulated-epitaxy (MME) technique was utilized to prevent formation of metal droplets during the material growth. Streaky patterns, seen in reflection high energy electron diffraction (RHEED), indicate 2-dimensional (2D) growth throughout the device. Post-deposition characterizations using scanning electron microscopy (SEM) showed smooth surfaces, while X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed the epitaxial nature of the quantum well structure. |
| doi_str_mv | 10.1109/PVSC.2012.6317973 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6317973</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6317973</ieee_id><sourcerecordid>6317973</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-d4806bd9b3672db393f593fe7ddd44bb8c6dab5e0db82e40c689dc09f20495793</originalsourceid><addsrcrecordid>eNo1kM1KAzEURiMq2NY-gLjJC0y9maTJZClF60BBweK25ucOjUwnNZNp0adXsC4-DmdzFh8hNwxmjIG-e3l7XcxKYOVMcqa04mdkqlXFhFQcQEp1Tsb_IuCCjIBJKCqu2BUZ9_0HQAlcshF5X6Z4zFtqOk_d1iTjMqbwbXKIHY0Nreu66EJOwSO1pkdPd0Obw75F-jmYLg87esS27WkTE91vY46H2GYTHPV4CA77a3LZmLbH6YkTsn58WC-eitXzsl7cr4qgIRdeVCCt15ZLVXrLNW_mv0PlvRfC2spJb-wcwduqRAFOVto70E0JQs-V5hNy-5cNiLjZp7Az6WtzOof_AEdSWFo</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Growth and characterization of III-nitride based multiple quantum wells for photovoltaic devices</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Wadekar, P. V. ; Huang, H.C. ; Chang, C. W. ; Dung, T. W. ; Lin, Y. T. ; Chen, Q. Y. ; Chou, M. C. ; Feng, S. W. ; Tu, L. W. ; Hu, N.J. ; Wijesundera, D. ; Chu, W.K.</creator><creatorcontrib>Wadekar, P. V. ; Huang, H.C. ; Chang, C. W. ; Dung, T. W. ; Lin, Y. T. ; Chen, Q. Y. ; Chou, M. C. ; Feng, S. W. ; Tu, L. W. ; Hu, N.J. ; Wijesundera, D. ; Chu, W.K.</creatorcontrib><description>Efficient conversion of solar energy into electricity is crucial to the use of renewable energy. Among the various semiconductors being investigated for photovoltaic conversion, III- nitrides are fervently pursued because of their band gap tenability from 0.65 eV to 3.4 eV by adjusting the indium concentration of In X Ga 1−X N alloys. This enables the coverage of optical absorption over a wide range of the solar spectrum, thus providing a path to boosting the conversion efficiency. This presentation reports on multiple quantum well (MQW) based solar cells fabricated on LiGaO 2 (00l) substrates by plasma assisted molecular beam epitaxy (PA-MBE). Metal-modulated-epitaxy (MME) technique was utilized to prevent formation of metal droplets during the material growth. Streaky patterns, seen in reflection high energy electron diffraction (RHEED), indicate 2-dimensional (2D) growth throughout the device. Post-deposition characterizations using scanning electron microscopy (SEM) showed smooth surfaces, while X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed the epitaxial nature of the quantum well structure.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 1467300640</identifier><identifier>ISBN: 9781467300643</identifier><identifier>EISBN: 9781467300667</identifier><identifier>EISBN: 1467300667</identifier><identifier>EISBN: 1467300659</identifier><identifier>EISBN: 9781467300650</identifier><identifier>DOI: 10.1109/PVSC.2012.6317973</identifier><language>eng</language><publisher>IEEE</publisher><subject>Diffraction ; Gallium nitride ; III-Nitride solar cells ; Lattices ; multiple quantum wells ; PA-MBE ; Photovoltaic cells ; Quantum well devices ; Substrates ; TEM ; X-ray diffraction</subject><ispartof>2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.001937-001939</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6317973$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6317973$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wadekar, P. V.</creatorcontrib><creatorcontrib>Huang, H.C.</creatorcontrib><creatorcontrib>Chang, C. W.</creatorcontrib><creatorcontrib>Dung, T. W.</creatorcontrib><creatorcontrib>Lin, Y. T.</creatorcontrib><creatorcontrib>Chen, Q. Y.</creatorcontrib><creatorcontrib>Chou, M. C.</creatorcontrib><creatorcontrib>Feng, S. W.</creatorcontrib><creatorcontrib>Tu, L. W.</creatorcontrib><creatorcontrib>Hu, N.J.</creatorcontrib><creatorcontrib>Wijesundera, D.</creatorcontrib><creatorcontrib>Chu, W.K.</creatorcontrib><title>Growth and characterization of III-nitride based multiple quantum wells for photovoltaic devices</title><title>2012 38th IEEE Photovoltaic Specialists Conference</title><addtitle>PVSC</addtitle><description>Efficient conversion of solar energy into electricity is crucial to the use of renewable energy. Among the various semiconductors being investigated for photovoltaic conversion, III- nitrides are fervently pursued because of their band gap tenability from 0.65 eV to 3.4 eV by adjusting the indium concentration of In X Ga 1−X N alloys. This enables the coverage of optical absorption over a wide range of the solar spectrum, thus providing a path to boosting the conversion efficiency. This presentation reports on multiple quantum well (MQW) based solar cells fabricated on LiGaO 2 (00l) substrates by plasma assisted molecular beam epitaxy (PA-MBE). Metal-modulated-epitaxy (MME) technique was utilized to prevent formation of metal droplets during the material growth. Streaky patterns, seen in reflection high energy electron diffraction (RHEED), indicate 2-dimensional (2D) growth throughout the device. Post-deposition characterizations using scanning electron microscopy (SEM) showed smooth surfaces, while X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed the epitaxial nature of the quantum well structure.</description><subject>Diffraction</subject><subject>Gallium nitride</subject><subject>III-Nitride solar cells</subject><subject>Lattices</subject><subject>multiple quantum wells</subject><subject>PA-MBE</subject><subject>Photovoltaic cells</subject><subject>Quantum well devices</subject><subject>Substrates</subject><subject>TEM</subject><subject>X-ray diffraction</subject><issn>0160-8371</issn><isbn>1467300640</isbn><isbn>9781467300643</isbn><isbn>9781467300667</isbn><isbn>1467300667</isbn><isbn>1467300659</isbn><isbn>9781467300650</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kM1KAzEURiMq2NY-gLjJC0y9maTJZClF60BBweK25ucOjUwnNZNp0adXsC4-DmdzFh8hNwxmjIG-e3l7XcxKYOVMcqa04mdkqlXFhFQcQEp1Tsb_IuCCjIBJKCqu2BUZ9_0HQAlcshF5X6Z4zFtqOk_d1iTjMqbwbXKIHY0Nreu66EJOwSO1pkdPd0Obw75F-jmYLg87esS27WkTE91vY46H2GYTHPV4CA77a3LZmLbH6YkTsn58WC-eitXzsl7cr4qgIRdeVCCt15ZLVXrLNW_mv0PlvRfC2spJb-wcwduqRAFOVto70E0JQs-V5hNy-5cNiLjZp7Az6WtzOof_AEdSWFo</recordid><startdate>201206</startdate><enddate>201206</enddate><creator>Wadekar, P. V.</creator><creator>Huang, H.C.</creator><creator>Chang, C. W.</creator><creator>Dung, T. W.</creator><creator>Lin, Y. T.</creator><creator>Chen, Q. Y.</creator><creator>Chou, M. C.</creator><creator>Feng, S. W.</creator><creator>Tu, L. W.</creator><creator>Hu, N.J.</creator><creator>Wijesundera, D.</creator><creator>Chu, W.K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201206</creationdate><title>Growth and characterization of III-nitride based multiple quantum wells for photovoltaic devices</title><author>Wadekar, P. V. ; Huang, H.C. ; Chang, C. W. ; Dung, T. W. ; Lin, Y. T. ; Chen, Q. Y. ; Chou, M. C. ; Feng, S. W. ; Tu, L. W. ; Hu, N.J. ; Wijesundera, D. ; Chu, W.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-d4806bd9b3672db393f593fe7ddd44bb8c6dab5e0db82e40c689dc09f20495793</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Diffraction</topic><topic>Gallium nitride</topic><topic>III-Nitride solar cells</topic><topic>Lattices</topic><topic>multiple quantum wells</topic><topic>PA-MBE</topic><topic>Photovoltaic cells</topic><topic>Quantum well devices</topic><topic>Substrates</topic><topic>TEM</topic><topic>X-ray diffraction</topic><toplevel>online_resources</toplevel><creatorcontrib>Wadekar, P. V.</creatorcontrib><creatorcontrib>Huang, H.C.</creatorcontrib><creatorcontrib>Chang, C. W.</creatorcontrib><creatorcontrib>Dung, T. W.</creatorcontrib><creatorcontrib>Lin, Y. T.</creatorcontrib><creatorcontrib>Chen, Q. Y.</creatorcontrib><creatorcontrib>Chou, M. C.</creatorcontrib><creatorcontrib>Feng, S. W.</creatorcontrib><creatorcontrib>Tu, L. W.</creatorcontrib><creatorcontrib>Hu, N.J.</creatorcontrib><creatorcontrib>Wijesundera, D.</creatorcontrib><creatorcontrib>Chu, W.K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wadekar, P. V.</au><au>Huang, H.C.</au><au>Chang, C. W.</au><au>Dung, T. W.</au><au>Lin, Y. T.</au><au>Chen, Q. Y.</au><au>Chou, M. C.</au><au>Feng, S. W.</au><au>Tu, L. W.</au><au>Hu, N.J.</au><au>Wijesundera, D.</au><au>Chu, W.K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Growth and characterization of III-nitride based multiple quantum wells for photovoltaic devices</atitle><btitle>2012 38th IEEE Photovoltaic Specialists Conference</btitle><stitle>PVSC</stitle><date>2012-06</date><risdate>2012</risdate><spage>001937</spage><epage>001939</epage><pages>001937-001939</pages><issn>0160-8371</issn><isbn>1467300640</isbn><isbn>9781467300643</isbn><eisbn>9781467300667</eisbn><eisbn>1467300667</eisbn><eisbn>1467300659</eisbn><eisbn>9781467300650</eisbn><abstract>Efficient conversion of solar energy into electricity is crucial to the use of renewable energy. Among the various semiconductors being investigated for photovoltaic conversion, III- nitrides are fervently pursued because of their band gap tenability from 0.65 eV to 3.4 eV by adjusting the indium concentration of In X Ga 1−X N alloys. This enables the coverage of optical absorption over a wide range of the solar spectrum, thus providing a path to boosting the conversion efficiency. This presentation reports on multiple quantum well (MQW) based solar cells fabricated on LiGaO 2 (00l) substrates by plasma assisted molecular beam epitaxy (PA-MBE). Metal-modulated-epitaxy (MME) technique was utilized to prevent formation of metal droplets during the material growth. Streaky patterns, seen in reflection high energy electron diffraction (RHEED), indicate 2-dimensional (2D) growth throughout the device. Post-deposition characterizations using scanning electron microscopy (SEM) showed smooth surfaces, while X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed the epitaxial nature of the quantum well structure.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.2012.6317973</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0160-8371 |
| ispartof | 2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.001937-001939 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_6317973 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Diffraction Gallium nitride III-Nitride solar cells Lattices multiple quantum wells PA-MBE Photovoltaic cells Quantum well devices Substrates TEM X-ray diffraction |
| title | Growth and characterization of III-nitride based multiple quantum wells for photovoltaic devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T22%3A57%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Growth%20and%20characterization%20of%20III-nitride%20based%20multiple%20quantum%20wells%20for%20photovoltaic%20devices&rft.btitle=2012%2038th%20IEEE%20Photovoltaic%20Specialists%20Conference&rft.au=Wadekar,%20P.%20V.&rft.date=2012-06&rft.spage=001937&rft.epage=001939&rft.pages=001937-001939&rft.issn=0160-8371&rft.isbn=1467300640&rft.isbn_list=9781467300643&rft_id=info:doi/10.1109/PVSC.2012.6317973&rft_dat=%3Cieee_6IE%3E6317973%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781467300667&rft.eisbn_list=1467300667&rft.eisbn_list=1467300659&rft.eisbn_list=9781467300650&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6317973&rfr_iscdi=true |