Design considerations for industrial rear passivated solar cells
In this work, the solar cell development issues arising by adding a dielectric rear side passivation to a standard screen-printing process are discussed with deposited Al 2 O 3 on p-type Cz-Si as an example. The influence of several design parameters is assessed in simulation and experiment and an o...
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creator | Lauermann, T. Frohlich, B. Hahn, G. Terheiden, B. |
description | In this work, the solar cell development issues arising by adding a dielectric rear side passivation to a standard screen-printing process are discussed with deposited Al 2 O 3 on p-type Cz-Si as an example. The influence of several design parameters is assessed in simulation and experiment and an optimization strategy is presented. These parameters include optical properties of the cell, like the choice of dielectric layer thickness and wafer surface roughness, parameters that influence the passivation quality like the temperature of the co-firing step in a belt furnace as well as electrical parameters like contact geometry, contact spacing and base resistivity. Their influence on the three efficiency-determining quantities, V OC , J SC and FF is outlined. Special attention is paid to minimizing the inevitable loss in FF in a PERC design. |
doi_str_mv | 10.1109/PVSC.2012.6317925 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6317925</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6317925</ieee_id><sourcerecordid>6317925</sourcerecordid><originalsourceid>FETCH-LOGICAL-i1335-4345d12ea9bf53e9a8fae75dc6a2dd9b6bb11e32a533094ed78a880699bdeb243</originalsourceid><addsrcrecordid>eNo1j91Kw0AQhVdUsK19APEmL5A6s5PsZu-U-AsFBX9uyyQ7kZWYlN0o-PYWrFfnfOfig6PUGcIKEdzF09tzvdKAemUIrdPlgVo6W2FhLAEYYw_V_B8KOFIzQAN5RRZP1DylDwANZHCmLq8lhfcha8chBS-Rp7BrWTfGLAz-K00xcJ9F4ZhtOaXwzZP4LI39bmil79OpOu64T7Lc50K93t681Pf5-vHuob5a5wGJyrygovSohV3TlSSOq47Flr41rL13jWkaRCHNJRG4QrytuKrAONd4aXRBC3X-5w0istnG8MnxZ7N_T7-x8EyQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Design considerations for industrial rear passivated solar cells</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Lauermann, T. ; Frohlich, B. ; Hahn, G. ; Terheiden, B.</creator><creatorcontrib>Lauermann, T. ; Frohlich, B. ; Hahn, G. ; Terheiden, B.</creatorcontrib><description>In this work, the solar cell development issues arising by adding a dielectric rear side passivation to a standard screen-printing process are discussed with deposited Al 2 O 3 on p-type Cz-Si as an example. The influence of several design parameters is assessed in simulation and experiment and an optimization strategy is presented. These parameters include optical properties of the cell, like the choice of dielectric layer thickness and wafer surface roughness, parameters that influence the passivation quality like the temperature of the co-firing step in a belt furnace as well as electrical parameters like contact geometry, contact spacing and base resistivity. Their influence on the three efficiency-determining quantities, V OC , J SC and FF is outlined. Special attention is paid to minimizing the inevitable loss in FF in a PERC design.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 1467300640</identifier><identifier>ISBN: 9781467300643</identifier><identifier>EISBN: 9781467300667</identifier><identifier>EISBN: 1467300667</identifier><identifier>EISBN: 1467300659</identifier><identifier>EISBN: 9781467300650</identifier><identifier>DOI: 10.1109/PVSC.2012.6317925</identifier><language>eng</language><publisher>IEEE</publisher><subject>Conductivity ; dielectric films ; finite element methods ; Firing ; Passivation ; Photovoltaic cells ; Resistance ; semiconductor device manufacture ; Silicon</subject><ispartof>2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.001710-001715</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6317925$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2057,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6317925$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lauermann, T.</creatorcontrib><creatorcontrib>Frohlich, B.</creatorcontrib><creatorcontrib>Hahn, G.</creatorcontrib><creatorcontrib>Terheiden, B.</creatorcontrib><title>Design considerations for industrial rear passivated solar cells</title><title>2012 38th IEEE Photovoltaic Specialists Conference</title><addtitle>PVSC</addtitle><description>In this work, the solar cell development issues arising by adding a dielectric rear side passivation to a standard screen-printing process are discussed with deposited Al 2 O 3 on p-type Cz-Si as an example. The influence of several design parameters is assessed in simulation and experiment and an optimization strategy is presented. These parameters include optical properties of the cell, like the choice of dielectric layer thickness and wafer surface roughness, parameters that influence the passivation quality like the temperature of the co-firing step in a belt furnace as well as electrical parameters like contact geometry, contact spacing and base resistivity. Their influence on the three efficiency-determining quantities, V OC , J SC and FF is outlined. Special attention is paid to minimizing the inevitable loss in FF in a PERC design.</description><subject>Conductivity</subject><subject>dielectric films</subject><subject>finite element methods</subject><subject>Firing</subject><subject>Passivation</subject><subject>Photovoltaic cells</subject><subject>Resistance</subject><subject>semiconductor device manufacture</subject><subject>Silicon</subject><issn>0160-8371</issn><isbn>1467300640</isbn><isbn>9781467300643</isbn><isbn>9781467300667</isbn><isbn>1467300667</isbn><isbn>1467300659</isbn><isbn>9781467300650</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j91Kw0AQhVdUsK19APEmL5A6s5PsZu-U-AsFBX9uyyQ7kZWYlN0o-PYWrFfnfOfig6PUGcIKEdzF09tzvdKAemUIrdPlgVo6W2FhLAEYYw_V_B8KOFIzQAN5RRZP1DylDwANZHCmLq8lhfcha8chBS-Rp7BrWTfGLAz-K00xcJ9F4ZhtOaXwzZP4LI39bmil79OpOu64T7Lc50K93t681Pf5-vHuob5a5wGJyrygovSohV3TlSSOq47Flr41rL13jWkaRCHNJRG4QrytuKrAONd4aXRBC3X-5w0istnG8MnxZ7N_T7-x8EyQ</recordid><startdate>201206</startdate><enddate>201206</enddate><creator>Lauermann, T.</creator><creator>Frohlich, B.</creator><creator>Hahn, G.</creator><creator>Terheiden, B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201206</creationdate><title>Design considerations for industrial rear passivated solar cells</title><author>Lauermann, T. ; Frohlich, B. ; Hahn, G. ; Terheiden, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i1335-4345d12ea9bf53e9a8fae75dc6a2dd9b6bb11e32a533094ed78a880699bdeb243</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Conductivity</topic><topic>dielectric films</topic><topic>finite element methods</topic><topic>Firing</topic><topic>Passivation</topic><topic>Photovoltaic cells</topic><topic>Resistance</topic><topic>semiconductor device manufacture</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Lauermann, T.</creatorcontrib><creatorcontrib>Frohlich, B.</creatorcontrib><creatorcontrib>Hahn, G.</creatorcontrib><creatorcontrib>Terheiden, B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lauermann, T.</au><au>Frohlich, B.</au><au>Hahn, G.</au><au>Terheiden, B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Design considerations for industrial rear passivated solar cells</atitle><btitle>2012 38th IEEE Photovoltaic Specialists Conference</btitle><stitle>PVSC</stitle><date>2012-06</date><risdate>2012</risdate><spage>001710</spage><epage>001715</epage><pages>001710-001715</pages><issn>0160-8371</issn><isbn>1467300640</isbn><isbn>9781467300643</isbn><eisbn>9781467300667</eisbn><eisbn>1467300667</eisbn><eisbn>1467300659</eisbn><eisbn>9781467300650</eisbn><abstract>In this work, the solar cell development issues arising by adding a dielectric rear side passivation to a standard screen-printing process are discussed with deposited Al 2 O 3 on p-type Cz-Si as an example. The influence of several design parameters is assessed in simulation and experiment and an optimization strategy is presented. These parameters include optical properties of the cell, like the choice of dielectric layer thickness and wafer surface roughness, parameters that influence the passivation quality like the temperature of the co-firing step in a belt furnace as well as electrical parameters like contact geometry, contact spacing and base resistivity. Their influence on the three efficiency-determining quantities, V OC , J SC and FF is outlined. Special attention is paid to minimizing the inevitable loss in FF in a PERC design.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.2012.6317925</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Conductivity dielectric films finite element methods Firing Passivation Photovoltaic cells Resistance semiconductor device manufacture Silicon |
title | Design considerations for industrial rear passivated solar cells |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T07%3A59%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Design%20considerations%20for%20industrial%20rear%20passivated%20solar%20cells&rft.btitle=2012%2038th%20IEEE%20Photovoltaic%20Specialists%20Conference&rft.au=Lauermann,%20T.&rft.date=2012-06&rft.spage=001710&rft.epage=001715&rft.pages=001710-001715&rft.issn=0160-8371&rft.isbn=1467300640&rft.isbn_list=9781467300643&rft_id=info:doi/10.1109/PVSC.2012.6317925&rft_dat=%3Cieee_6IE%3E6317925%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781467300667&rft.eisbn_list=1467300667&rft.eisbn_list=1467300659&rft.eisbn_list=9781467300650&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6317925&rfr_iscdi=true |