The optimization of high indium and high phosphorus content InGaAs/GaAsP strained layer superlattices for use in multijunction solar cells

InGaAs/GaAsP strained layer superlattices (SLS) with high phosphorus and high indium content inserted into the intrinsic region of GaAs solar cells increases short circuit current with minimal impact on open circuit voltage. Very thin, high phosphorus content barriers provide several key advantages...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Carlin, C. Zachary, Bradshaw, G. K., Samberg, J. P., Colter, P. C., El-Masry, N. A., Bedair, S. M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Absorption Gallium arsenide Indium Indium gallium arsenide InGaAs/GaAsP Photovoltaic cells quantum size effect quantum well solar cell staggered well Strain superlattice Superlattices tunneling
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!