Optical transparency and surface recombination considerations for high sheet resistance emitter passivation on silicon solar cells
The optical impacts of thin SiO 2 passivation layer on industrial Si solar cells are modeled. The modeling shows that negligible optical loss results from SiO 2 of
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 001171 |
|---|---|
| container_issue | |
| container_start_page | 001166 |
| container_title | |
| container_volume | |
| creator | Yamanaka, S. Gurnon, N. Dybiec, M. Mueller, G. Kopp, B. Good, E. |
| description | The optical impacts of thin SiO 2 passivation layer on industrial Si solar cells are modeled. The modeling shows that negligible optical loss results from SiO 2 of |
| doi_str_mv | 10.1109/PVSC.2012.6317809 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6317809</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6317809</ieee_id><sourcerecordid>6317809</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-9abc947b0eea83936d0bc231982fc197abffd13437901bc1fd907c390da27c6f3</originalsourceid><addsrcrecordid>eNo1kEFLAzEUhCMq2Nb-APGSP7D1ZbMkm6MUtUKhgsVreZt9sZFtdkmi0Ku_3GorDHwMzMxhGLsRMBMCzN3L2-t8VoIoZ0oKXYM5Y1Oja1EpLQGU0uds_G8quGAjEAqKWmpxxcYpfQCUIJUYse_VkL3FjueIIQ0YKdg9x9Dy9BkdWuKRbL9rfMDs-8BtH5JvKf65xF0f-da_b3naEuVDNvmUMRxqtPM5U-QDpuS_juWDku-8_WXfYeSWui5ds0uHXaLpiRO2fnxYzxfFcvX0PL9fFt5ALgw21lS6ASKspZGqhcaWUpi6dFYYjY1zrZCV1AZEY4VrDWgrDbRYaqucnLDb46wnos0Q_Q7jfnO6T_4AfflmBQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Optical transparency and surface recombination considerations for high sheet resistance emitter passivation on silicon solar cells</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Yamanaka, S. ; Gurnon, N. ; Dybiec, M. ; Mueller, G. ; Kopp, B. ; Good, E.</creator><creatorcontrib>Yamanaka, S. ; Gurnon, N. ; Dybiec, M. ; Mueller, G. ; Kopp, B. ; Good, E.</creatorcontrib><description>The optical impacts of thin SiO 2 passivation layer on industrial Si solar cells are modeled. The modeling shows that negligible optical loss results from SiO 2 of <;18 nm thickness in combination with an adjusted thickness of conventional SiN x anti-reflective coating. Thermally-grown SiO 2 was applied as the front surface passivation of industrial Si solar cells with high sheet-resistivity (115 Ω/sq) emitter. Considerable improvement was observed in effective minority carrier lifetime, and 9 mV of Voc and 0.1% (absolute) of cell efficiency gains have been attained with ~18 nm thick SiO 2 grown at 850 °C over the industrial-type reference cells.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 1467300640</identifier><identifier>ISBN: 9781467300643</identifier><identifier>EISBN: 9781467300667</identifier><identifier>EISBN: 1467300667</identifier><identifier>EISBN: 1467300659</identifier><identifier>EISBN: 9781467300650</identifier><identifier>DOI: 10.1109/PVSC.2012.6317809</identifier><language>eng</language><publisher>IEEE</publisher><subject>Argon ; emitter ; high sheet resistivity ; Optical losses ; optical modeling ; Optical reflection ; Optical refraction ; Optical sensors ; Oxidation ; passivation ; Silicon ; silicon oxide ; silicon solar cell</subject><ispartof>2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.001166-001171</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6317809$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6317809$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yamanaka, S.</creatorcontrib><creatorcontrib>Gurnon, N.</creatorcontrib><creatorcontrib>Dybiec, M.</creatorcontrib><creatorcontrib>Mueller, G.</creatorcontrib><creatorcontrib>Kopp, B.</creatorcontrib><creatorcontrib>Good, E.</creatorcontrib><title>Optical transparency and surface recombination considerations for high sheet resistance emitter passivation on silicon solar cells</title><title>2012 38th IEEE Photovoltaic Specialists Conference</title><addtitle>PVSC</addtitle><description>The optical impacts of thin SiO 2 passivation layer on industrial Si solar cells are modeled. The modeling shows that negligible optical loss results from SiO 2 of <;18 nm thickness in combination with an adjusted thickness of conventional SiN x anti-reflective coating. Thermally-grown SiO 2 was applied as the front surface passivation of industrial Si solar cells with high sheet-resistivity (115 Ω/sq) emitter. Considerable improvement was observed in effective minority carrier lifetime, and 9 mV of Voc and 0.1% (absolute) of cell efficiency gains have been attained with ~18 nm thick SiO 2 grown at 850 °C over the industrial-type reference cells.</description><subject>Argon</subject><subject>emitter</subject><subject>high sheet resistivity</subject><subject>Optical losses</subject><subject>optical modeling</subject><subject>Optical reflection</subject><subject>Optical refraction</subject><subject>Optical sensors</subject><subject>Oxidation</subject><subject>passivation</subject><subject>Silicon</subject><subject>silicon oxide</subject><subject>silicon solar cell</subject><issn>0160-8371</issn><isbn>1467300640</isbn><isbn>9781467300643</isbn><isbn>9781467300667</isbn><isbn>1467300667</isbn><isbn>1467300659</isbn><isbn>9781467300650</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kEFLAzEUhCMq2Nb-APGSP7D1ZbMkm6MUtUKhgsVreZt9sZFtdkmi0Ku_3GorDHwMzMxhGLsRMBMCzN3L2-t8VoIoZ0oKXYM5Y1Oja1EpLQGU0uds_G8quGAjEAqKWmpxxcYpfQCUIJUYse_VkL3FjueIIQ0YKdg9x9Dy9BkdWuKRbL9rfMDs-8BtH5JvKf65xF0f-da_b3naEuVDNvmUMRxqtPM5U-QDpuS_juWDku-8_WXfYeSWui5ds0uHXaLpiRO2fnxYzxfFcvX0PL9fFt5ALgw21lS6ASKspZGqhcaWUpi6dFYYjY1zrZCV1AZEY4VrDWgrDbRYaqucnLDb46wnos0Q_Q7jfnO6T_4AfflmBQ</recordid><startdate>201206</startdate><enddate>201206</enddate><creator>Yamanaka, S.</creator><creator>Gurnon, N.</creator><creator>Dybiec, M.</creator><creator>Mueller, G.</creator><creator>Kopp, B.</creator><creator>Good, E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201206</creationdate><title>Optical transparency and surface recombination considerations for high sheet resistance emitter passivation on silicon solar cells</title><author>Yamanaka, S. ; Gurnon, N. ; Dybiec, M. ; Mueller, G. ; Kopp, B. ; Good, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-9abc947b0eea83936d0bc231982fc197abffd13437901bc1fd907c390da27c6f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Argon</topic><topic>emitter</topic><topic>high sheet resistivity</topic><topic>Optical losses</topic><topic>optical modeling</topic><topic>Optical reflection</topic><topic>Optical refraction</topic><topic>Optical sensors</topic><topic>Oxidation</topic><topic>passivation</topic><topic>Silicon</topic><topic>silicon oxide</topic><topic>silicon solar cell</topic><toplevel>online_resources</toplevel><creatorcontrib>Yamanaka, S.</creatorcontrib><creatorcontrib>Gurnon, N.</creatorcontrib><creatorcontrib>Dybiec, M.</creatorcontrib><creatorcontrib>Mueller, G.</creatorcontrib><creatorcontrib>Kopp, B.</creatorcontrib><creatorcontrib>Good, E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yamanaka, S.</au><au>Gurnon, N.</au><au>Dybiec, M.</au><au>Mueller, G.</au><au>Kopp, B.</au><au>Good, E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Optical transparency and surface recombination considerations for high sheet resistance emitter passivation on silicon solar cells</atitle><btitle>2012 38th IEEE Photovoltaic Specialists Conference</btitle><stitle>PVSC</stitle><date>2012-06</date><risdate>2012</risdate><spage>001166</spage><epage>001171</epage><pages>001166-001171</pages><issn>0160-8371</issn><isbn>1467300640</isbn><isbn>9781467300643</isbn><eisbn>9781467300667</eisbn><eisbn>1467300667</eisbn><eisbn>1467300659</eisbn><eisbn>9781467300650</eisbn><abstract>The optical impacts of thin SiO 2 passivation layer on industrial Si solar cells are modeled. The modeling shows that negligible optical loss results from SiO 2 of <;18 nm thickness in combination with an adjusted thickness of conventional SiN x anti-reflective coating. Thermally-grown SiO 2 was applied as the front surface passivation of industrial Si solar cells with high sheet-resistivity (115 Ω/sq) emitter. Considerable improvement was observed in effective minority carrier lifetime, and 9 mV of Voc and 0.1% (absolute) of cell efficiency gains have been attained with ~18 nm thick SiO 2 grown at 850 °C over the industrial-type reference cells.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.2012.6317809</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0160-8371 |
| ispartof | 2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.001166-001171 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_6317809 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Argon emitter high sheet resistivity Optical losses optical modeling Optical reflection Optical refraction Optical sensors Oxidation passivation Silicon silicon oxide silicon solar cell |
| title | Optical transparency and surface recombination considerations for high sheet resistance emitter passivation on silicon solar cells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T09%3A57%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Optical%20transparency%20and%20surface%20recombination%20considerations%20for%20high%20sheet%20resistance%20emitter%20passivation%20on%20silicon%20solar%20cells&rft.btitle=2012%2038th%20IEEE%20Photovoltaic%20Specialists%20Conference&rft.au=Yamanaka,%20S.&rft.date=2012-06&rft.spage=001166&rft.epage=001171&rft.pages=001166-001171&rft.issn=0160-8371&rft.isbn=1467300640&rft.isbn_list=9781467300643&rft_id=info:doi/10.1109/PVSC.2012.6317809&rft_dat=%3Cieee_6IE%3E6317809%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781467300667&rft.eisbn_list=1467300667&rft.eisbn_list=1467300659&rft.eisbn_list=9781467300650&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6317809&rfr_iscdi=true |