The spot-like defect on aluminum oxide passivation layer for crystalline silicon wafer

Defects such as dislocations and grain boundaries generally govern the efficiency of silicon-based solar cells. The use of a proper passivation layer can substantially increase the energy conversion efficiency. In this study, spot-like defects on the aluminum oxide passivation layer were observed. T...

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Bibliographische Detailangaben

Hauptverfasser:	Teng-Yu Wang, Cheng-Chi Liu, Chien-Hsiung Hon, Chen-Hsun Du, Chung-Yuan Kung, Jeng-Lang Lue, Chi-Chun Li
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum oxide Annealing Atomic layer deposition Charge carrier lifetime Passivation Silicon
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