Germanium-Tin \hbox^\hbox Junction Formed Using Phosphorus Ion Implant and 400 ^ \hbox Rapid Thermal Anneal
AGe 0.976 Sn 0.024 n + /p diode was formed using phosphorus ion (P + ) implant and rapid thermal annealing at 400°C. Activation of P in Ge typically requires high temperatures (e.g., 700°C), and it was found that this is not needed in the presence of a small amount of Sn. A high forward bias current...
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| Veröffentlicht in: | IEEE electron device letters 2012-11, Vol.33 (11), p.1529-1531 |
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| creator | Wang, Lanxiang Su, Shaojian Wang, Wei Yang, Yue Tong, Yi Liu, Bin Guo, Pengfei Gong, Xiao Zhang, Guangze Xue, Chunlai Cheng, Buwen Han, Genquan Yeo, Yee-Chia |
| description | AGe 0.976 Sn 0.024 n + /p diode was formed using phosphorus ion (P + ) implant and rapid thermal annealing at 400°C. Activation of P in Ge typically requires high temperatures (e.g., 700°C), and it was found that this is not needed in the presence of a small amount of Sn. A high forward bias current of 320 A/cm 2 at -1 V is achieved for the Ge 0.976 Sn 0.024 n + /p diode. This is four times higher than that of the Ge n + /p control diode, which received the same P + implant but activated at 700°C. The n + -GeSn region has a high active dopant concentration of 2.1 × 10 19 × cm -3 , much higher than that in the Ge control. The increased active dopant concentration in GeSn reduces the width of the tunneling barrier between the Al contact and the n + -GeSn and increases the forward bias diode current. Enhancement of P activation in Ge 0.976 Sn 0.024 could possibly be as a result of passivation of vacancies in the Ge lattice due to Sn atoms. |
| doi_str_mv | 10.1109/LED.2012.2212871 |
| format | Article |
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Activation of P in Ge typically requires high temperatures (e.g., 700°C), and it was found that this is not needed in the presence of a small amount of Sn. A high forward bias current of 320 A/cm 2 at -1 V is achieved for the Ge 0.976 Sn 0.024 n + /p diode. This is four times higher than that of the Ge n + /p control diode, which received the same P + implant but activated at 700°C. The n + -GeSn region has a high active dopant concentration of 2.1 × 10 19 × cm -3 , much higher than that in the Ge control. The increased active dopant concentration in GeSn reduces the width of the tunneling barrier between the Al contact and the n + -GeSn and increases the forward bias diode current. Enhancement of P activation in Ge 0.976 Sn 0.024 could possibly be as a result of passivation of vacancies in the Ge lattice due to Sn atoms.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2012.2212871</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Dopant activation ; Doping ; Germanium ; GeSn ; hbox{n}^{+}\hbox{/p} junction ; Ion implantation ; Junctions ; MOSFETs ; Rapid thermal annealing ; Semiconductor diodes ; Tin</subject><ispartof>IEEE electron device letters, 2012-11, Vol.33 (11), p.1529-1531</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1081-7a8a91a91b21445d024d5000c356d666d767b10347705fed1f94257c0e3cb99f3</citedby><cites>FETCH-LOGICAL-c1081-7a8a91a91b21445d024d5000c356d666d767b10347705fed1f94257c0e3cb99f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6311421$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6311421$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wang, Lanxiang</creatorcontrib><creatorcontrib>Su, Shaojian</creatorcontrib><creatorcontrib>Wang, Wei</creatorcontrib><creatorcontrib>Yang, Yue</creatorcontrib><creatorcontrib>Tong, Yi</creatorcontrib><creatorcontrib>Liu, Bin</creatorcontrib><creatorcontrib>Guo, Pengfei</creatorcontrib><creatorcontrib>Gong, Xiao</creatorcontrib><creatorcontrib>Zhang, Guangze</creatorcontrib><creatorcontrib>Xue, Chunlai</creatorcontrib><creatorcontrib>Cheng, Buwen</creatorcontrib><creatorcontrib>Han, Genquan</creatorcontrib><creatorcontrib>Yeo, Yee-Chia</creatorcontrib><title>Germanium-Tin \hbox^\hbox Junction Formed Using Phosphorus Ion Implant and 400 ^ \hbox Rapid Thermal Anneal</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>AGe 0.976 Sn 0.024 n + /p diode was formed using phosphorus ion (P + ) implant and rapid thermal annealing at 400°C. Activation of P in Ge typically requires high temperatures (e.g., 700°C), and it was found that this is not needed in the presence of a small amount of Sn. A high forward bias current of 320 A/cm 2 at -1 V is achieved for the Ge 0.976 Sn 0.024 n + /p diode. This is four times higher than that of the Ge n + /p control diode, which received the same P + implant but activated at 700°C. The n + -GeSn region has a high active dopant concentration of 2.1 × 10 19 × cm -3 , much higher than that in the Ge control. The increased active dopant concentration in GeSn reduces the width of the tunneling barrier between the Al contact and the n + -GeSn and increases the forward bias diode current. Enhancement of P activation in Ge 0.976 Sn 0.024 could possibly be as a result of passivation of vacancies in the Ge lattice due to Sn atoms.</description><subject>Dopant activation</subject><subject>Doping</subject><subject>Germanium</subject><subject>GeSn</subject><subject>hbox{n}^{+}\hbox{/p} junction</subject><subject>Ion implantation</subject><subject>Junctions</subject><subject>MOSFETs</subject><subject>Rapid thermal annealing</subject><subject>Semiconductor diodes</subject><subject>Tin</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFbvgpf9A6kz-5kcS621UlCkvUnDJrsx0WQTsi3ovze1RRhmDjPvw_AQcoswQYTkfjV_mDBANmEMWazxjIxQyjgCqfg5GYEWGHEEdUmuQvgEQCG0GJGvhesb46t9E60rT9_LrP3e_nX6vPf5rmo9fWz7xlm6CZX_oK9lG7qy7feBLofdsulq43fUeEsFAN0eEfTNdJWl6_JAr-nUe2fqa3JRmDq4m9Mck83jfD17ilYvi-VsuopyhBgjbWKT4FAZG56UFpiwEgByLpVVSlmtdIbAhdYgC2exSASTOgfH8yxJCj4mcOTmfRtC74q066vG9D8pQnqQlQ6y0oOs9CRriNwdI5Vz7v9ccUTBkP8ClvlkMA</recordid><startdate>201211</startdate><enddate>201211</enddate><creator>Wang, Lanxiang</creator><creator>Su, Shaojian</creator><creator>Wang, Wei</creator><creator>Yang, Yue</creator><creator>Tong, Yi</creator><creator>Liu, Bin</creator><creator>Guo, Pengfei</creator><creator>Gong, Xiao</creator><creator>Zhang, Guangze</creator><creator>Xue, Chunlai</creator><creator>Cheng, Buwen</creator><creator>Han, Genquan</creator><creator>Yeo, Yee-Chia</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201211</creationdate><title>Germanium-Tin \hbox^\hbox Junction Formed Using Phosphorus Ion Implant and 400 ^ \hbox Rapid Thermal Anneal</title><author>Wang, Lanxiang ; Su, Shaojian ; Wang, Wei ; Yang, Yue ; Tong, Yi ; Liu, Bin ; Guo, Pengfei ; Gong, Xiao ; Zhang, Guangze ; Xue, Chunlai ; Cheng, Buwen ; Han, Genquan ; Yeo, Yee-Chia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1081-7a8a91a91b21445d024d5000c356d666d767b10347705fed1f94257c0e3cb99f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Dopant activation</topic><topic>Doping</topic><topic>Germanium</topic><topic>GeSn</topic><topic>hbox{n}^{+}\hbox{/p} junction</topic><topic>Ion implantation</topic><topic>Junctions</topic><topic>MOSFETs</topic><topic>Rapid thermal annealing</topic><topic>Semiconductor diodes</topic><topic>Tin</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Lanxiang</creatorcontrib><creatorcontrib>Su, Shaojian</creatorcontrib><creatorcontrib>Wang, Wei</creatorcontrib><creatorcontrib>Yang, Yue</creatorcontrib><creatorcontrib>Tong, Yi</creatorcontrib><creatorcontrib>Liu, Bin</creatorcontrib><creatorcontrib>Guo, Pengfei</creatorcontrib><creatorcontrib>Gong, Xiao</creatorcontrib><creatorcontrib>Zhang, Guangze</creatorcontrib><creatorcontrib>Xue, Chunlai</creatorcontrib><creatorcontrib>Cheng, Buwen</creatorcontrib><creatorcontrib>Han, Genquan</creatorcontrib><creatorcontrib>Yeo, Yee-Chia</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Lanxiang</au><au>Su, Shaojian</au><au>Wang, Wei</au><au>Yang, Yue</au><au>Tong, Yi</au><au>Liu, Bin</au><au>Guo, Pengfei</au><au>Gong, Xiao</au><au>Zhang, Guangze</au><au>Xue, Chunlai</au><au>Cheng, Buwen</au><au>Han, Genquan</au><au>Yeo, Yee-Chia</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Germanium-Tin \hbox^\hbox Junction Formed Using Phosphorus Ion Implant and 400 ^ \hbox Rapid Thermal Anneal</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2012-11</date><risdate>2012</risdate><volume>33</volume><issue>11</issue><spage>1529</spage><epage>1531</epage><pages>1529-1531</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>AGe 0.976 Sn 0.024 n + /p diode was formed using phosphorus ion (P + ) implant and rapid thermal annealing at 400°C. Activation of P in Ge typically requires high temperatures (e.g., 700°C), and it was found that this is not needed in the presence of a small amount of Sn. A high forward bias current of 320 A/cm 2 at -1 V is achieved for the Ge 0.976 Sn 0.024 n + /p diode. This is four times higher than that of the Ge n + /p control diode, which received the same P + implant but activated at 700°C. The n + -GeSn region has a high active dopant concentration of 2.1 × 10 19 × cm -3 , much higher than that in the Ge control. The increased active dopant concentration in GeSn reduces the width of the tunneling barrier between the Al contact and the n + -GeSn and increases the forward bias diode current. Enhancement of P activation in Ge 0.976 Sn 0.024 could possibly be as a result of passivation of vacancies in the Ge lattice due to Sn atoms.</abstract><pub>IEEE</pub><doi>10.1109/LED.2012.2212871</doi><tpages>3</tpages></addata></record> |
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| subjects | Dopant activation Doping Germanium GeSn hbox{n}^{+}\hbox{/p} junction Ion implantation Junctions MOSFETs Rapid thermal annealing Semiconductor diodes Tin |
| title | Germanium-Tin \hbox^\hbox Junction Formed Using Phosphorus Ion Implant and 400 ^ \hbox Rapid Thermal Anneal |
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