Wideband LNA With an Active -C Element
This letter discusses a wideband inductorless low-noise amplifier (LNA) that incorporates a new active -C element, which draws 170 μA of current. A 10 MHz-2.8 GHz proof-of-concept LNA in 65 nm CMOS is proposed. The LNA itself is power- and noise- matched and achieves noise figures as low as 1 dB, vo...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2012-10, Vol.22 (10), p.524-526 |
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| container_end_page | 526 |
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| container_issue | 10 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Belostotski, L. Madanayake, A. Bruton, L. T. |
| description | This letter discusses a wideband inductorless low-noise amplifier (LNA) that incorporates a new active -C element, which draws 170 μA of current. A 10 MHz-2.8 GHz proof-of-concept LNA in 65 nm CMOS is proposed. The LNA itself is power- and noise- matched and achieves noise figures as low as 1 dB, voltage gain of 32 dB and IIP3 of - 13.6 dBm. |
| doi_str_mv | 10.1109/LMWC.2012.2218632 |
| format | Article |
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T.</creator><creatorcontrib>Belostotski, L. ; Madanayake, A. ; Bruton, L. T.</creatorcontrib><description>This letter discusses a wideband inductorless low-noise amplifier (LNA) that incorporates a new active -C element, which draws 170 μA of current. A 10 MHz-2.8 GHz proof-of-concept LNA in 65 nm CMOS is proposed. The LNA itself is power- and noise- matched and achieves noise figures as low as 1 dB, voltage gain of 32 dB and IIP3 of - 13.6 dBm.</description><identifier>ISSN: 1531-1309</identifier><identifier>EISSN: 1558-1764</identifier><identifier>DOI: 10.1109/LMWC.2012.2218632</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Active negative capacitor ; Amplifiers ; Applied sciences ; Circuit properties ; CMOS integrated circuits ; Design. Technologies. Operation analysis. Testing ; Dielectric, amorphous and glass solid devices ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Impedance ; Impedance matching ; Integrated circuits ; low-noise amplifier (LNA) ; Microwave integrated circuits ; Noise ; noise match ; Noise measurement ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Testing</subject><subject>Dielectric, amorphous and glass solid devices</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Impedance</subject><subject>Impedance matching</subject><subject>Integrated circuits</subject><subject>low-noise amplifier (LNA)</subject><subject>Microwave integrated circuits</subject><subject>Noise</subject><subject>noise match</subject><subject>Noise measurement</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Testing</topic><topic>Dielectric, amorphous and glass solid devices</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Impedance</topic><topic>Impedance matching</topic><topic>Integrated circuits</topic><topic>low-noise amplifier (LNA)</topic><topic>Microwave integrated circuits</topic><topic>Noise</topic><topic>noise match</topic><topic>Noise measurement</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Wideband</topic><toplevel>online_resources</toplevel><creatorcontrib>Belostotski, L.</creatorcontrib><creatorcontrib>Madanayake, A.</creatorcontrib><creatorcontrib>Bruton, L. 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T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Wideband LNA With an Active -C Element</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2012-10-01</date><risdate>2012</risdate><volume>22</volume><issue>10</issue><spage>524</spage><epage>526</epage><pages>524-526</pages><issn>1531-1309</issn><eissn>1558-1764</eissn><coden>IMWCBJ</coden><abstract>This letter discusses a wideband inductorless low-noise amplifier (LNA) that incorporates a new active -C element, which draws 170 μA of current. A 10 MHz-2.8 GHz proof-of-concept LNA in 65 nm CMOS is proposed. The LNA itself is power- and noise- matched and achieves noise figures as low as 1 dB, voltage gain of 32 dB and IIP3 of - 13.6 dBm.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2012.2218632</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2012-10, Vol.22 (10), p.524-526 |
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| language | eng |
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| source | IEEE Xplore |
| subjects | Active negative capacitor Amplifiers Applied sciences Circuit properties CMOS integrated circuits Design. Technologies. Operation analysis. Testing Dielectric, amorphous and glass solid devices Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Impedance Impedance matching Integrated circuits low-noise amplifier (LNA) Microwave integrated circuits Noise noise match Noise measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Wideband |
| title | Wideband LNA With an Active -C Element |
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