A novel internal field enhanced retention degradation model for localized charge trapping memory device
A novel internal electric field enhanced retention model for localized charge trapping memory devices is proposed to explain the reliability degradation. According to the model, the excitation energy level distribution profiles of trapped holes after different P/E cycling stress are demonstrated for...
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| creator | Xiao Yu Liyang Pan Fengying Qiao Guangjian Shi Jun Xu |
| description | A novel internal electric field enhanced retention model for localized charge trapping memory devices is proposed to explain the reliability degradation. According to the model, the excitation energy level distribution profiles of trapped holes after different P/E cycling stress are demonstrated for the first time. |
| doi_str_mv | 10.1109/IPFA.2012.6306295 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6306295</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6306295</ieee_id><sourcerecordid>6306295</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-ea39b8a4efab3e3b9ac357fe704ded2daaee5c99441da84bff4eb089674c90763</originalsourceid><addsrcrecordid>eNpFkM9KAzEYxOM_sNY-gHjJC2xNNtlkcyzFaqGgBwVv5dvkyzaymy3ZpVCf3kWLnmZgZn6HIeSOsznnzDysX1eLec54PleCqdwUZ-SGS6UFM6WQ52TCjVQZLwp28R-wj8u_QObXZNb3n4yNkFLlWk9IvaCxO2BDQxwwRWioD9g4inEH0aKjCQeMQ-gidVgncPDj286NG98l2nQWmvA1Nu0OUo10SLDfh1jTFtsuHcfZIVi8JVcemh5nJ52S99Xj2_I527w8rZeLTRa4LoYMQZiqBIkeKoGiMmBFoT1qJh263AEgFtYYKbmDUlbeS6xYaZSW1jCtxJTc_3IDIm73KbSQjtvTYeIbEO5d2g</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A novel internal field enhanced retention degradation model for localized charge trapping memory device</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Xiao Yu ; Liyang Pan ; Fengying Qiao ; Guangjian Shi ; Jun Xu</creator><creatorcontrib>Xiao Yu ; Liyang Pan ; Fengying Qiao ; Guangjian Shi ; Jun Xu</creatorcontrib><description>A novel internal electric field enhanced retention model for localized charge trapping memory devices is proposed to explain the reliability degradation. According to the model, the excitation energy level distribution profiles of trapped holes after different P/E cycling stress are demonstrated for the first time.</description><identifier>ISSN: 1946-1542</identifier><identifier>ISBN: 146730980X</identifier><identifier>ISBN: 9781467309806</identifier><identifier>EISSN: 1946-1550</identifier><identifier>EISBN: 1467309834</identifier><identifier>EISBN: 9781467309837</identifier><identifier>EISBN: 1467309826</identifier><identifier>EISBN: 9781467309820</identifier><identifier>DOI: 10.1109/IPFA.2012.6306295</identifier><language>eng</language><publisher>IEEE</publisher><subject>Degradation ; Electric fields ; Electron traps ; Energy states ; Mathematical model ; Stress</subject><ispartof>2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2012, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6306295$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6306295$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xiao Yu</creatorcontrib><creatorcontrib>Liyang Pan</creatorcontrib><creatorcontrib>Fengying Qiao</creatorcontrib><creatorcontrib>Guangjian Shi</creatorcontrib><creatorcontrib>Jun Xu</creatorcontrib><title>A novel internal field enhanced retention degradation model for localized charge trapping memory device</title><title>2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits</title><addtitle>IPFA</addtitle><description>A novel internal electric field enhanced retention model for localized charge trapping memory devices is proposed to explain the reliability degradation. According to the model, the excitation energy level distribution profiles of trapped holes after different P/E cycling stress are demonstrated for the first time.</description><subject>Degradation</subject><subject>Electric fields</subject><subject>Electron traps</subject><subject>Energy states</subject><subject>Mathematical model</subject><subject>Stress</subject><issn>1946-1542</issn><issn>1946-1550</issn><isbn>146730980X</isbn><isbn>9781467309806</isbn><isbn>1467309834</isbn><isbn>9781467309837</isbn><isbn>1467309826</isbn><isbn>9781467309820</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkM9KAzEYxOM_sNY-gHjJC2xNNtlkcyzFaqGgBwVv5dvkyzaymy3ZpVCf3kWLnmZgZn6HIeSOsznnzDysX1eLec54PleCqdwUZ-SGS6UFM6WQ52TCjVQZLwp28R-wj8u_QObXZNb3n4yNkFLlWk9IvaCxO2BDQxwwRWioD9g4inEH0aKjCQeMQ-gidVgncPDj286NG98l2nQWmvA1Nu0OUo10SLDfh1jTFtsuHcfZIVi8JVcemh5nJ52S99Xj2_I527w8rZeLTRa4LoYMQZiqBIkeKoGiMmBFoT1qJh263AEgFtYYKbmDUlbeS6xYaZSW1jCtxJTc_3IDIm73KbSQjtvTYeIbEO5d2g</recordid><startdate>201207</startdate><enddate>201207</enddate><creator>Xiao Yu</creator><creator>Liyang Pan</creator><creator>Fengying Qiao</creator><creator>Guangjian Shi</creator><creator>Jun Xu</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201207</creationdate><title>A novel internal field enhanced retention degradation model for localized charge trapping memory device</title><author>Xiao Yu ; Liyang Pan ; Fengying Qiao ; Guangjian Shi ; Jun Xu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-ea39b8a4efab3e3b9ac357fe704ded2daaee5c99441da84bff4eb089674c90763</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Degradation</topic><topic>Electric fields</topic><topic>Electron traps</topic><topic>Energy states</topic><topic>Mathematical model</topic><topic>Stress</topic><toplevel>online_resources</toplevel><creatorcontrib>Xiao Yu</creatorcontrib><creatorcontrib>Liyang Pan</creatorcontrib><creatorcontrib>Fengying Qiao</creatorcontrib><creatorcontrib>Guangjian Shi</creatorcontrib><creatorcontrib>Jun Xu</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xiao Yu</au><au>Liyang Pan</au><au>Fengying Qiao</au><au>Guangjian Shi</au><au>Jun Xu</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A novel internal field enhanced retention degradation model for localized charge trapping memory device</atitle><btitle>2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits</btitle><stitle>IPFA</stitle><date>2012-07</date><risdate>2012</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1946-1542</issn><eissn>1946-1550</eissn><isbn>146730980X</isbn><isbn>9781467309806</isbn><eisbn>1467309834</eisbn><eisbn>9781467309837</eisbn><eisbn>1467309826</eisbn><eisbn>9781467309820</eisbn><abstract>A novel internal electric field enhanced retention model for localized charge trapping memory devices is proposed to explain the reliability degradation. According to the model, the excitation energy level distribution profiles of trapped holes after different P/E cycling stress are demonstrated for the first time.</abstract><pub>IEEE</pub><doi>10.1109/IPFA.2012.6306295</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1946-1542 |
| ispartof | 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2012, p.1-4 |
| issn | 1946-1542 1946-1550 |
| language | eng |
| recordid | cdi_ieee_primary_6306295 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Degradation Electric fields Electron traps Energy states Mathematical model Stress |
| title | A novel internal field enhanced retention degradation model for localized charge trapping memory device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T08%3A09%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20novel%20internal%20field%20enhanced%20retention%20degradation%20model%20for%20localized%20charge%20trapping%20memory%20device&rft.btitle=2012%2019th%20IEEE%20International%20Symposium%20on%20the%20Physical%20and%20Failure%20Analysis%20of%20Integrated%20Circuits&rft.au=Xiao%20Yu&rft.date=2012-07&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=1946-1542&rft.eissn=1946-1550&rft.isbn=146730980X&rft.isbn_list=9781467309806&rft_id=info:doi/10.1109/IPFA.2012.6306295&rft_dat=%3Cieee_6IE%3E6306295%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1467309834&rft.eisbn_list=9781467309837&rft.eisbn_list=1467309826&rft.eisbn_list=9781467309820&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6306295&rfr_iscdi=true |