Scrubber clean induced device IDDQ fail
IDDQ is an effective test method to screen out process related defects during chip probe (CP) test. Through failure analysis it was determined that some production wafers suffering minor yield loss in wafer edge for IDDQ failure was the result from inter layer dielectric cracks. Monitor wafers were...
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| creator | Re-Long Chiu Higgins, J. Shu-Lan Ying Shih-Tzung Chang Chung, J. Dick, B. Lee, E. |
| description | IDDQ is an effective test method to screen out process related defects during chip probe (CP) test. Through failure analysis it was determined that some production wafers suffering minor yield loss in wafer edge for IDDQ failure was the result from inter layer dielectric cracks. Monitor wafers were processed and utilized for root cause finding using layer-by-layer inline KLA scan review, where the problem was found to be a scrubber clean tool used during a TiN glue layer post CVD clean stage. This caused the wafers to be impacted by process induced ESD damage. The scrubber clean stage is extensively used in the manufacture process to remove particles from the surface of wafer. The possible source of the ESD damage during scrubber clean was studied. After improving the scrubber clean process, the wafer edge yield loss with IDDQ failure was recovered. |
| doi_str_mv | 10.1109/IPFA.2012.6306293 |
| format | Conference Proceeding |
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Through failure analysis it was determined that some production wafers suffering minor yield loss in wafer edge for IDDQ failure was the result from inter layer dielectric cracks. Monitor wafers were processed and utilized for root cause finding using layer-by-layer inline KLA scan review, where the problem was found to be a scrubber clean tool used during a TiN glue layer post CVD clean stage. This caused the wafers to be impacted by process induced ESD damage. The scrubber clean stage is extensively used in the manufacture process to remove particles from the surface of wafer. The possible source of the ESD damage during scrubber clean was studied. After improving the scrubber clean process, the wafer edge yield loss with IDDQ failure was recovered.</description><identifier>ISSN: 1946-1542</identifier><identifier>ISBN: 146730980X</identifier><identifier>ISBN: 9781467309806</identifier><identifier>EISSN: 1946-1550</identifier><identifier>EISBN: 1467309834</identifier><identifier>EISBN: 9781467309837</identifier><identifier>EISBN: 1467309826</identifier><identifier>EISBN: 9781467309820</identifier><identifier>DOI: 10.1109/IPFA.2012.6306293</identifier><language>eng</language><publisher>IEEE</publisher><subject>Dielectrics ; Electrostatic discharges ; Inspection ; Monitoring ; Scanning electron microscopy ; Tin ; Tungsten</subject><ispartof>2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2012, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6306293$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6306293$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Re-Long Chiu</creatorcontrib><creatorcontrib>Higgins, J.</creatorcontrib><creatorcontrib>Shu-Lan Ying</creatorcontrib><creatorcontrib>Shih-Tzung Chang</creatorcontrib><creatorcontrib>Chung, J.</creatorcontrib><creatorcontrib>Dick, B.</creatorcontrib><creatorcontrib>Lee, E.</creatorcontrib><title>Scrubber clean induced device IDDQ fail</title><title>2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits</title><addtitle>IPFA</addtitle><description>IDDQ is an effective test method to screen out process related defects during chip probe (CP) test. 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Through failure analysis it was determined that some production wafers suffering minor yield loss in wafer edge for IDDQ failure was the result from inter layer dielectric cracks. Monitor wafers were processed and utilized for root cause finding using layer-by-layer inline KLA scan review, where the problem was found to be a scrubber clean tool used during a TiN glue layer post CVD clean stage. This caused the wafers to be impacted by process induced ESD damage. The scrubber clean stage is extensively used in the manufacture process to remove particles from the surface of wafer. The possible source of the ESD damage during scrubber clean was studied. After improving the scrubber clean process, the wafer edge yield loss with IDDQ failure was recovered.</abstract><pub>IEEE</pub><doi>10.1109/IPFA.2012.6306293</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1946-1542 |
| ispartof | 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2012, p.1-4 |
| issn | 1946-1542 1946-1550 |
| language | eng |
| recordid | cdi_ieee_primary_6306293 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Dielectrics Electrostatic discharges Inspection Monitoring Scanning electron microscopy Tin Tungsten |
| title | Scrubber clean induced device IDDQ fail |
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