Quantitative investigation of the adhesion failure of Ti-based metal thin films on Si wafers

In this study, failure analysis was conducted to investigate the root cause of Ti/Ni/Ag film peeling from Si wafer surface. The adhesion strength of Ti/Ni/Ag film on Si was quantitatively measured by 4 Point Bending method (4PB), where a novel delamination initiation method was introduced to signifi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chen Shuting, Zhu Jie, Anyan, D., Hua Younan
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!