Fabrication and electrical properties of 0.9PMN-0.1PT MIM capacitors

Fabrication and electrical properties of 0.9PMN-0.1PT MIM capacitors

This paper describes the fabrication and characterization of 0.9PMN-0.1PT MIM capacitors with platinum electrodes. The films have been deposited by Pulsed Laser Deposition (PLD) on a buffer layer (SrRuO 3 ) which has been demonstrated to be essential to enhance the growth of PMN-PT instead of pyroch...

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Hauptverfasser: Leuliet, A., Jamond, N., Bisaro, R., Garry, G., Pham-Thi, M., Ziaei, A., Michalas, L., Koutsoureli, M., Papaioannou, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
0.9PMN-0.1PT
Buffer layers
Current measurement
Electrodes
MIM capacitors
Platinum
PLD high k dielectric film
Pulsed laser deposition
Schottky barrier
Temperature
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Beschreibung
Zusammenfassung:This paper describes the fabrication and characterization of 0.9PMN-0.1PT MIM capacitors with platinum electrodes. The films have been deposited by Pulsed Laser Deposition (PLD) on a buffer layer (SrRuO 3 ) which has been demonstrated to be essential to enhance the growth of PMN-PT instead of pyrochlore. The temperature analysis of the current voltage characteristics revealed that the dc conductivity is interface controlled due to Schottky emission. The other important parameters determining the device current are magnitude, polarity and duration of the applied bias.
ISSN:1099-4734
2375-0448
DOI:10.1109/ISAF.2012.6297830