Piezoelectric enhancement of relaxor-based lead-free piezoelectric ceramics by nanodomain engineering
0.3BaTiO 3 -0.1Bi(Mg 1/2 Ti 1/2 )O 3 -0.6BiFeO 3 ceramics were either doped with vanadium or sintered in calcined powder with the same composition. Compared to an undoped ceramic sintered without the calcined powder, both ceramics showed reduced leakage current densities (lower than 1 × 10 -7 A/cm 2...
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| creator | Fujii, I. Mitsui, R. Nakashima, K. Kumada, N. Wada, S. Yabuta, H. Shimada, M. Watanabe, T. Miura, K. |
| description | 0.3BaTiO 3 -0.1Bi(Mg 1/2 Ti 1/2 )O 3 -0.6BiFeO 3 ceramics were either doped with vanadium or sintered in calcined powder with the same composition. Compared to an undoped ceramic sintered without the calcined powder, both ceramics showed reduced leakage current densities (lower than 1 × 10 -7 A/cm 2 ) and absence of dielectric relaxation behaviors observed in frequency-and temperature-dependent dielectric measurements. The Curie temperatures of both samples were higher than 460 °C. The maximum field-induced strain over the applied field, S max /E max , of 366 pm/V of the undoped ceramic sintered without the calcined powder increased to 455 and 799 pm/V for the V-doped sample and the sample sintered with the calcined powder, respectively. The increase was related to a reduced concentration of bismuth vacancy - oxygen vacancy defect dipoles. |
| doi_str_mv | 10.1109/ISAF.2012.6297767 |
| format | Conference Proceeding |
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Compared to an undoped ceramic sintered without the calcined powder, both ceramics showed reduced leakage current densities (lower than 1 × 10 -7 A/cm 2 ) and absence of dielectric relaxation behaviors observed in frequency-and temperature-dependent dielectric measurements. The Curie temperatures of both samples were higher than 460 °C. The maximum field-induced strain over the applied field, S max /E max , of 366 pm/V of the undoped ceramic sintered without the calcined powder increased to 455 and 799 pm/V for the V-doped sample and the sample sintered with the calcined powder, respectively. 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Compared to an undoped ceramic sintered without the calcined powder, both ceramics showed reduced leakage current densities (lower than 1 × 10 -7 A/cm 2 ) and absence of dielectric relaxation behaviors observed in frequency-and temperature-dependent dielectric measurements. The Curie temperatures of both samples were higher than 460 °C. The maximum field-induced strain over the applied field, S max /E max , of 366 pm/V of the undoped ceramic sintered without the calcined powder increased to 455 and 799 pm/V for the V-doped sample and the sample sintered with the calcined powder, respectively. The increase was related to a reduced concentration of bismuth vacancy - oxygen vacancy defect dipoles.</description><subject>Ceramics</subject><subject>Dielectric measurements</subject><subject>Dielectrics</subject><subject>Electric fields</subject><subject>lead-free</subject><subject>Leakage current</subject><subject>nanodomain</subject><subject>piezoeletrics</subject><subject>Powders</subject><subject>relaxor</subject><subject>Temperature measurement</subject><issn>1099-4734</issn><issn>2375-0448</issn><isbn>9781467326681</isbn><isbn>1467326682</isbn><isbn>9781467326674</isbn><isbn>1467326674</isbn><isbn>9781467326698</isbn><isbn>1467326690</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkMtOwzAURM1Loir5AMTGP-BiO44fy6qiUKkSSMC6unGui1HiVE4WlK8nEt10NrOYmbMYQu4FXwjB3ePmfbleSC7kQktnjDYXpHDGCqVNKbU26pLMZGkqxpWyV2eZFddkNjEcU6ZUt6QYhm8-aWrwSs4IvkX87bFFP-boKaYvSB47TCPtA83Ywk-fWQ0DNrRFaFjIiPRwNvKYoYt-oPWRJkh903cQ08Tax4SYY9rfkZsA7YDFyefkc_30sXph29fnzWq5ZVGYamS-FmC9KDl6JyofjMWKY4OV88pICVoKFABKahsao9CpurE2GBdq4BZtOScP_9yIiLtDjh3k4-50WvkHAVxeJw</recordid><startdate>201207</startdate><enddate>201207</enddate><creator>Fujii, I.</creator><creator>Mitsui, R.</creator><creator>Nakashima, K.</creator><creator>Kumada, N.</creator><creator>Wada, S.</creator><creator>Yabuta, H.</creator><creator>Shimada, M.</creator><creator>Watanabe, T.</creator><creator>Miura, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201207</creationdate><title>Piezoelectric enhancement of relaxor-based lead-free piezoelectric ceramics by nanodomain engineering</title><author>Fujii, I. ; Mitsui, R. ; Nakashima, K. ; Kumada, N. ; Wada, S. ; Yabuta, H. ; Shimada, M. ; Watanabe, T. ; Miura, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-cb1a8c130ec915cf78e50ede59c4722a621e1aa4268fd74e94bd88f79fba08e83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Ceramics</topic><topic>Dielectric measurements</topic><topic>Dielectrics</topic><topic>Electric fields</topic><topic>lead-free</topic><topic>Leakage current</topic><topic>nanodomain</topic><topic>piezoeletrics</topic><topic>Powders</topic><topic>relaxor</topic><topic>Temperature measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Fujii, I.</creatorcontrib><creatorcontrib>Mitsui, R.</creatorcontrib><creatorcontrib>Nakashima, K.</creatorcontrib><creatorcontrib>Kumada, N.</creatorcontrib><creatorcontrib>Wada, S.</creatorcontrib><creatorcontrib>Yabuta, H.</creatorcontrib><creatorcontrib>Shimada, M.</creatorcontrib><creatorcontrib>Watanabe, T.</creatorcontrib><creatorcontrib>Miura, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fujii, I.</au><au>Mitsui, R.</au><au>Nakashima, K.</au><au>Kumada, N.</au><au>Wada, S.</au><au>Yabuta, H.</au><au>Shimada, M.</au><au>Watanabe, T.</au><au>Miura, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Piezoelectric enhancement of relaxor-based lead-free piezoelectric ceramics by nanodomain engineering</atitle><btitle>Proceedings of ISAF-ECAPD-PFM 2012</btitle><stitle>ISAF</stitle><date>2012-07</date><risdate>2012</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1099-4734</issn><eissn>2375-0448</eissn><isbn>9781467326681</isbn><isbn>1467326682</isbn><eisbn>9781467326674</eisbn><eisbn>1467326674</eisbn><eisbn>9781467326698</eisbn><eisbn>1467326690</eisbn><abstract>0.3BaTiO 3 -0.1Bi(Mg 1/2 Ti 1/2 )O 3 -0.6BiFeO 3 ceramics were either doped with vanadium or sintered in calcined powder with the same composition. Compared to an undoped ceramic sintered without the calcined powder, both ceramics showed reduced leakage current densities (lower than 1 × 10 -7 A/cm 2 ) and absence of dielectric relaxation behaviors observed in frequency-and temperature-dependent dielectric measurements. The Curie temperatures of both samples were higher than 460 °C. The maximum field-induced strain over the applied field, S max /E max , of 366 pm/V of the undoped ceramic sintered without the calcined powder increased to 455 and 799 pm/V for the V-doped sample and the sample sintered with the calcined powder, respectively. The increase was related to a reduced concentration of bismuth vacancy - oxygen vacancy defect dipoles.</abstract><pub>IEEE</pub><doi>10.1109/ISAF.2012.6297767</doi><tpages>4</tpages></addata></record> |
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| issn | 1099-4734 2375-0448 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Ceramics Dielectric measurements Dielectrics Electric fields lead-free Leakage current nanodomain piezoeletrics Powders relaxor Temperature measurement |
| title | Piezoelectric enhancement of relaxor-based lead-free piezoelectric ceramics by nanodomain engineering |
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