Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in \hboxX\hboxX\hbox\hbox Self-Aligned STI nand Flash Memory
A novel program-inhibit phenomenon of "negative" cell Vt shift has been investigated for the first time in 2 X - 3 X -nm self-aligned shallow trench isolation nand Flash memory cells. The negative Vt shift is caused in an inhibit cell when along-word-line adjacent cell is programming. The...
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| Veröffentlicht in: | IEEE transactions on electron devices 2012-11, Vol.59 (11), p.2950-2955 |
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| container_title | IEEE transactions on electron devices |
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| creator | Aritome, S. Soonok Seo Hyung-Seok Kim Sung-Kye Park Seok-Kiu Lee Sungjoo Hong |
| description | A novel program-inhibit phenomenon of "negative" cell Vt shift has been investigated for the first time in 2 X - 3 X -nm self-aligned shallow trench isolation nand Flash memory cells. The negative Vt shift is caused in an inhibit cell when along-word-line adjacent cell is programming. The magnitude of the negative shift becomes larger in the case of higher program voltage ( V PGM ), lower field oxide height, slower program speed of the adjacent cell, and high Vt of victim cell. The experimental results suggest that the mechanism of negative Vt shift is attributed to hot holes that are generated by FN electron injection from channel/junction to the control gate. This phenomenon will become worse with cell size scaling since hot hole generation is increased by increasing the electron injection due to narrower floating gate space. Therefore, this negative Vt shift phenomenon is one of the new scaling limiters of nand Flash memory cell, which needs to be managed for 2 and 3 b/cell in 2 X nm and beyond nand Flash memories. |
| doi_str_mv | 10.1109/TED.2012.2212198 |
| format | Article |
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The negative Vt shift is caused in an inhibit cell when along-word-line adjacent cell is programming. The magnitude of the negative shift becomes larger in the case of higher program voltage ( V PGM ), lower field oxide height, slower program speed of the adjacent cell, and high Vt of victim cell. The experimental results suggest that the mechanism of negative Vt shift is attributed to hot holes that are generated by FN electron injection from channel/junction to the control gate. This phenomenon will become worse with cell size scaling since hot hole generation is increased by increasing the electron injection due to narrower floating gate space. Therefore, this negative Vt shift phenomenon is one of the new scaling limiters of nand Flash memory cell, which needs to be managed for 2 and 3 b/cell in 2 X nm and beyond nand Flash memories.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2012.2212198</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge carrier processes ; Couplings ; Flash memory ; FN tunneling ; Hot carriers ; program disturb ; Programming ; self-aligned shallow trench isolation (STI) (SA-STI) ; Substrates</subject><ispartof>IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2950-2955</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6294438$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,782,786,798,27931,27932,54765</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6294438$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Aritome, S.</creatorcontrib><creatorcontrib>Soonok Seo</creatorcontrib><creatorcontrib>Hyung-Seok Kim</creatorcontrib><creatorcontrib>Sung-Kye Park</creatorcontrib><creatorcontrib>Seok-Kiu Lee</creatorcontrib><creatorcontrib>Sungjoo Hong</creatorcontrib><title>Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in \hboxX\hboxX\hbox\hbox Self-Aligned STI nand Flash Memory</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A novel program-inhibit phenomenon of "negative" cell Vt shift has been investigated for the first time in 2 X - 3 X -nm self-aligned shallow trench isolation nand Flash memory cells. The negative Vt shift is caused in an inhibit cell when along-word-line adjacent cell is programming. The magnitude of the negative shift becomes larger in the case of higher program voltage ( V PGM ), lower field oxide height, slower program speed of the adjacent cell, and high Vt of victim cell. The experimental results suggest that the mechanism of negative Vt shift is attributed to hot holes that are generated by FN electron injection from channel/junction to the control gate. This phenomenon will become worse with cell size scaling since hot hole generation is increased by increasing the electron injection due to narrower floating gate space. Therefore, this negative Vt shift phenomenon is one of the new scaling limiters of nand Flash memory cell, which needs to be managed for 2 and 3 b/cell in 2 X nm and beyond nand Flash memories.</description><subject>Charge carrier processes</subject><subject>Couplings</subject><subject>Flash memory</subject><subject>FN tunneling</subject><subject>Hot carriers</subject><subject>program disturb</subject><subject>Programming</subject><subject>self-aligned shallow trench isolation (STI) (SA-STI)</subject><subject>Substrates</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9jkFrwjAYhsNQWNXdB7t8fyBdEmPXHIdT5kERWsTDQCJ-bTLSRNLi5r9fkR122uF9Xh7ey0vII2cp50w9l4u3VDAuUiG44Cq_IwmfzV6oymQ2IAljPKdqmk_vyahtP3vNpBQJ-dqECzrYYK07e0HYdVAYW3WwNehD08dDqGAbQx11Q1fe2KPtYI7OgfXwYY7he_-HN0CBrqKvztYeT1CUK_Dan2DpdGtgjU2I1wkZVtq1-PDbY_K0XJTzd2oR8XCOttHxesiEkrI__f_6A8laTNM</recordid><startdate>201211</startdate><enddate>201211</enddate><creator>Aritome, S.</creator><creator>Soonok Seo</creator><creator>Hyung-Seok Kim</creator><creator>Sung-Kye Park</creator><creator>Seok-Kiu Lee</creator><creator>Sungjoo Hong</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope></search><sort><creationdate>201211</creationdate><title>Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in \hboxX\hboxX\hbox\hbox Self-Aligned STI nand Flash Memory</title><author>Aritome, S. ; Soonok Seo ; Hyung-Seok Kim ; Sung-Kye Park ; Seok-Kiu Lee ; Sungjoo Hong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_62944383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Charge carrier processes</topic><topic>Couplings</topic><topic>Flash memory</topic><topic>FN tunneling</topic><topic>Hot carriers</topic><topic>program disturb</topic><topic>Programming</topic><topic>self-aligned shallow trench isolation (STI) (SA-STI)</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aritome, S.</creatorcontrib><creatorcontrib>Soonok Seo</creatorcontrib><creatorcontrib>Hyung-Seok Kim</creatorcontrib><creatorcontrib>Sung-Kye Park</creatorcontrib><creatorcontrib>Seok-Kiu Lee</creatorcontrib><creatorcontrib>Sungjoo Hong</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Aritome, S.</au><au>Soonok Seo</au><au>Hyung-Seok Kim</au><au>Sung-Kye Park</au><au>Seok-Kiu Lee</au><au>Sungjoo Hong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in \hboxX\hboxX\hbox\hbox Self-Aligned STI nand Flash Memory</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2012-11</date><risdate>2012</risdate><volume>59</volume><issue>11</issue><spage>2950</spage><epage>2955</epage><pages>2950-2955</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A novel program-inhibit phenomenon of "negative" cell Vt shift has been investigated for the first time in 2 X - 3 X -nm self-aligned shallow trench isolation nand Flash memory cells. The negative Vt shift is caused in an inhibit cell when along-word-line adjacent cell is programming. The magnitude of the negative shift becomes larger in the case of higher program voltage ( V PGM ), lower field oxide height, slower program speed of the adjacent cell, and high Vt of victim cell. The experimental results suggest that the mechanism of negative Vt shift is attributed to hot holes that are generated by FN electron injection from channel/junction to the control gate. This phenomenon will become worse with cell size scaling since hot hole generation is increased by increasing the electron injection due to narrower floating gate space. Therefore, this negative Vt shift phenomenon is one of the new scaling limiters of nand Flash memory cell, which needs to be managed for 2 and 3 b/cell in 2 X nm and beyond nand Flash memories.</abstract><pub>IEEE</pub><doi>10.1109/TED.2012.2212198</doi></addata></record> |
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| subjects | Charge carrier processes Couplings Flash memory FN tunneling Hot carriers program disturb Programming self-aligned shallow trench isolation (STI) (SA-STI) Substrates |
| title | Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in \hboxX\hboxX\hbox\hbox Self-Aligned STI nand Flash Memory |
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