Modelling the effect of 1 MeV electron irradiation on the performance degradation of a single junction AlxGa1−xAs/GaAs solar cell

We have modelled the effect of 1 MeV electron irradiation on the performance degradation of a single junction Al x Ga 1-x As/GaAs solar cell. The irradiation-induced defects result in energy states within the energy gap of the semiconductors. In this paper, we first model the effect of 1 MeV electro...

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Bibliographische Detailangaben

Hauptverfasser:	Elahidoost, A., Fathipour, M., Mojab, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Doping Electron irradiation Gallium arsenide Irradiation-induced defects Performance degradation Single junction Al x Ga 1−x As/GaAs solar cell
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