Plasma-Wave Detectors for Terahertz Wireless Communication

Plasma-Wave Detectors for Terahertz Wireless Communication

We report on terahertz wireless communication experiments at 0.3 THz using 250-nm gate-length GaAs/AlGaAs field-effect transistor (FET) as a detector and unitraveling-carrier photodiode as a source. The physical mechanism of the detection process is terahertz wave rectification on nonlinearities rel...

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Veröffentlicht in:IEEE electron device letters 2012-10, Vol.33 (10), p.1354-1356
Hauptverfasser: Blin, S., Teppe, F., Tohme, L., Hisatake, S., Arakawa, K., Nouvel, P., Coquillat, D., Penarier, A., Torres, J., Varani, L., Knap, W., Nagatsuma, T.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Bandwidth
Communications technology
Detectors
Electronics
Engineering Sciences
Exact sciences and technology
FETs
field-effect transistors (FETs)
Frequency modulation
General equipment and techniques
high-electron-mobility transistors
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Molecular electronics, nanoelectronics
nanoelectronics
Optoelectronic devices
Physics
plasma waves
receivers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors (chemical, optical, electrical, movement, gas, etc.)
remote sensing
terahertz
Transistors
Wireless communication
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Zusammenfassung:We report on terahertz wireless communication experiments at 0.3 THz using 250-nm gate-length GaAs/AlGaAs field-effect transistor (FET) as a detector and unitraveling-carrier photodiode as a source. The physical mechanism of the detection process is terahertz wave rectification on nonlinearities related to overdamped plasma oscillations in the transistor channel. We present an experimental study of rectification bandwidth and show for the first time that room-temperature direct detection with modulation bandwidth of up to 8 GHz can be achieved, thus showing that nanometer-sized FETs can be used as valuable detectors in all-solid-state terahertz wireless communication systems.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2210022