Application advantages of high voltage high current IGBTs with punch through technology
New process technologies are extending the application range of IGBT modules. 2500 V and 3300 V/1200 A IGBTs have been developed using an optimized punch-through design that achieves a positive temperature coefficient of saturation voltage and rugged safe operating area of the nonpunch-through appro...
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| creator | Donlon, J.F. Motto, E.R. Ishii, K. Iida, T. |
| description | New process technologies are extending the application range of IGBT modules. 2500 V and 3300 V/1200 A IGBTs have been developed using an optimized punch-through design that achieves a positive temperature coefficient of saturation voltage and rugged safe operating area of the nonpunch-through approach while retaining the low loss characteristics of punch-through technology. Special wafer processing, optimizing the collector p+ concentration and local lifetime control, is employed to achieve these characteristics. This paper discusses the adaptation of the punch-through design to achieve the desired device characteristics. |
| doi_str_mv | 10.1109/IAS.1997.628976 |
| format | Conference Proceeding |
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Special wafer processing, optimizing the collector p+ concentration and local lifetime control, is employed to achieve these characteristics. This paper discusses the adaptation of the punch-through design to achieve the desired device characteristics.</description><identifier>ISSN: 0197-2618</identifier><identifier>ISBN: 0780340671</identifier><identifier>ISBN: 9780780340671</identifier><identifier>EISSN: 2576-702X</identifier><identifier>DOI: 10.1109/IAS.1997.628976</identifier><language>eng</language><publisher>IEEE</publisher><subject>Buffer layers ; Charge carrier lifetime ; Chip scale packaging ; Design optimization ; Electron beams ; Insulated gate bipolar transistors ; Power engineering and energy ; Silicon ; USA Councils ; Voltage</subject><ispartof>IAS '97. 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This paper discusses the adaptation of the punch-through design to achieve the desired device characteristics.</description><subject>Buffer layers</subject><subject>Charge carrier lifetime</subject><subject>Chip scale packaging</subject><subject>Design optimization</subject><subject>Electron beams</subject><subject>Insulated gate bipolar transistors</subject><subject>Power engineering and energy</subject><subject>Silicon</subject><subject>USA Councils</subject><subject>Voltage</subject><issn>0197-2618</issn><issn>2576-702X</issn><isbn>0780340671</isbn><isbn>9780780340671</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUE1PhDAUbPxIxHXPJp76B8DXQik94kZXkk08uEZvm9IPqEEgUNbsv5cNzmUyk3kvmUHonkBECIjHIn-PiBA8SmkmeHqBAsp4GnKgX5foFngGcQIpJ1coACJ4SFOS3aD1OH7DjIQlQrAAfeZ93zglvetaLPVRtl5WZsSdxbWranzsmrOxCDUNg2k9LrZP-xH_Ol_jfmpVjX09dNMc8EbVbdd01ekOXVvZjGb9zyv08fK837yGu7dtscl3oSOc-lCdq4DWQjNrY63LRDGb6FLxklIRS8I0QMlAUsu0TgyjSiouIJvvqLEmXqGH5a8zxhz6wf3I4XRYJon_AOy6VGs</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Donlon, J.F.</creator><creator>Motto, E.R.</creator><creator>Ishii, K.</creator><creator>Iida, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>Application advantages of high voltage high current IGBTs with punch through technology</title><author>Donlon, J.F. ; Motto, E.R. ; Ishii, K. ; Iida, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-c11090dd9d5ff3ddb4c5f4dbc7b2293a15d00b50a2f5dd4e52cac79081102efe3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Buffer layers</topic><topic>Charge carrier lifetime</topic><topic>Chip scale packaging</topic><topic>Design optimization</topic><topic>Electron beams</topic><topic>Insulated gate bipolar transistors</topic><topic>Power engineering and energy</topic><topic>Silicon</topic><topic>USA Councils</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Donlon, J.F.</creatorcontrib><creatorcontrib>Motto, E.R.</creatorcontrib><creatorcontrib>Ishii, K.</creatorcontrib><creatorcontrib>Iida, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Donlon, J.F.</au><au>Motto, E.R.</au><au>Ishii, K.</au><au>Iida, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Application advantages of high voltage high current IGBTs with punch through technology</atitle><btitle>IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting</btitle><stitle>IAS</stitle><date>1997</date><risdate>1997</risdate><volume>2</volume><spage>955</spage><epage>960 vol.2</epage><pages>955-960 vol.2</pages><issn>0197-2618</issn><eissn>2576-702X</eissn><isbn>0780340671</isbn><isbn>9780780340671</isbn><abstract>New process technologies are extending the application range of IGBT modules. 2500 V and 3300 V/1200 A IGBTs have been developed using an optimized punch-through design that achieves a positive temperature coefficient of saturation voltage and rugged safe operating area of the nonpunch-through approach while retaining the low loss characteristics of punch-through technology. Special wafer processing, optimizing the collector p+ concentration and local lifetime control, is employed to achieve these characteristics. This paper discusses the adaptation of the punch-through design to achieve the desired device characteristics.</abstract><pub>IEEE</pub><doi>10.1109/IAS.1997.628976</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0197-2618 |
| ispartof | IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting, 1997, Vol.2, p.955-960 vol.2 |
| issn | 0197-2618 2576-702X |
| language | eng |
| recordid | cdi_ieee_primary_628976 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Buffer layers Charge carrier lifetime Chip scale packaging Design optimization Electron beams Insulated gate bipolar transistors Power engineering and energy Silicon USA Councils Voltage |
| title | Application advantages of high voltage high current IGBTs with punch through technology |
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