2-D simulation of degenerate hot electron transport in MODFETs including DX center trapping
A comprehensive 2-D hydrodynamic energy model which is capable of describing nonstationary electron dynamics and nonisothermal transport within submicrometer MODFETs (TEGFETs or HEMTs) is presented. The model accounts for carrier degeneracy, deep DX center levels, and conduction outside the quantum...
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| Veröffentlicht in: | IEEE transactions on computer-aided design of integrated circuits and systems 1990-11, Vol.9 (11), p.1150-1163 |
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| container_title | IEEE transactions on computer-aided design of integrated circuits and systems |
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| creator | Shawki, T. Salmer, G. El-Sayed, O. |
| description | A comprehensive 2-D hydrodynamic energy model which is capable of describing nonstationary electron dynamics and nonisothermal transport within submicrometer MODFETs (TEGFETs or HEMTs) is presented. The model accounts for carrier degeneracy, deep DX center levels, and conduction outside the quantum well, thereby including bulk and parasitic MESFET effects. A technique for handling carrier degeneracy is presented. The authors also present two techniques developed to overcome the complexity of solving the coupling between the model nonlinear partial differential equations (PDEs). These cover DX center trapping kinetics and the energy derivatives in the Jacobian, particularly regarding the energy-conservation equation. The model is so informative that it highlights the main physical phenomena which govern device behavior such as velocity overshoots, stationary domain formation, buffer injection, back injection, and local longitudinal field inversion at the gate entrance of the channel. The model is systematically used to predict the DC and small-signal performance of submicrometer gate AlGaAs-GaAs MODFETs operating at room temperature.< > |
| doi_str_mv | 10.1109/43.62752 |
| format | Article |
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The model accounts for carrier degeneracy, deep DX center levels, and conduction outside the quantum well, thereby including bulk and parasitic MESFET effects. A technique for handling carrier degeneracy is presented. The authors also present two techniques developed to overcome the complexity of solving the coupling between the model nonlinear partial differential equations (PDEs). These cover DX center trapping kinetics and the energy derivatives in the Jacobian, particularly regarding the energy-conservation equation. The model is so informative that it highlights the main physical phenomena which govern device behavior such as velocity overshoots, stationary domain formation, buffer injection, back injection, and local longitudinal field inversion at the gate entrance of the channel. The model is systematically used to predict the DC and small-signal performance of submicrometer gate AlGaAs-GaAs MODFETs operating at room temperature.< ></description><identifier>ISSN: 0278-0070</identifier><identifier>EISSN: 1937-4151</identifier><identifier>DOI: 10.1109/43.62752</identifier><identifier>CODEN: ITCSDI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Couplings ; Electronics ; Electrons ; Exact sciences and technology ; HEMTs ; Hydrodynamics ; Jacobian matrices ; Kinetic theory ; MESFETs ; MODFETs ; Nonlinear equations ; Partial differential equations ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The model accounts for carrier degeneracy, deep DX center levels, and conduction outside the quantum well, thereby including bulk and parasitic MESFET effects. A technique for handling carrier degeneracy is presented. The authors also present two techniques developed to overcome the complexity of solving the coupling between the model nonlinear partial differential equations (PDEs). These cover DX center trapping kinetics and the energy derivatives in the Jacobian, particularly regarding the energy-conservation equation. The model is so informative that it highlights the main physical phenomena which govern device behavior such as velocity overshoots, stationary domain formation, buffer injection, back injection, and local longitudinal field inversion at the gate entrance of the channel. The model is systematically used to predict the DC and small-signal performance of submicrometer gate AlGaAs-GaAs MODFETs operating at room temperature.< ></description><subject>Applied sciences</subject><subject>Couplings</subject><subject>Electronics</subject><subject>Electrons</subject><subject>Exact sciences and technology</subject><subject>HEMTs</subject><subject>Hydrodynamics</subject><subject>Jacobian matrices</subject><subject>Kinetic theory</subject><subject>MESFETs</subject><subject>MODFETs</subject><subject>Nonlinear equations</subject><subject>Partial differential equations</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0278-0070</issn><issn>1937-4151</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNqNkD1PwzAQhi0EEqUgsbJ5QIglxXYcOx5RWz6koi4gITFEjnMpRmkSbGfg3-OSqjPTne597hlehC4pmVFK1B1PZ4LJjB2hCVWpTDjN6DGaECbzhBBJTtGZ91-EUJ4xNUEfLFlgb7dDo4PtWtzVuIINtOB0APzZBQwNmOBiFJxufd-5gG2LX9aLh-Wrj6tphsq2G7x4xwbaAG4H9n08naOTWjceLvZzit7iz_wpWa0fn-f3q8QwrkJSg2BcU2JYKqisSiEFg1xKlUOZEl4qVmnOFdRC1pRJWZaZLg3noBSXrBTpFN2M3t513wP4UGytN9A0uoVu8AXL8zyjMvsHSCUTgkbwdgSN67x3UBe9s1vtfgpKil3NBU-Lv5ojer13am90U8eSjPUHnqtYM90Zr0bMAsAhHRW_riSC-A</recordid><startdate>19901101</startdate><enddate>19901101</enddate><creator>Shawki, T.</creator><creator>Salmer, G.</creator><creator>El-Sayed, O.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>7U5</scope></search><sort><creationdate>19901101</creationdate><title>2-D simulation of degenerate hot electron transport in MODFETs including DX center trapping</title><author>Shawki, T. ; Salmer, G. ; El-Sayed, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c249t-fe624a10c23617db6762e87798eb304b92da449ef67f1277bb5abc44e99472b63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Couplings</topic><topic>Electronics</topic><topic>Electrons</topic><topic>Exact sciences and technology</topic><topic>HEMTs</topic><topic>Hydrodynamics</topic><topic>Jacobian matrices</topic><topic>Kinetic theory</topic><topic>MESFETs</topic><topic>MODFETs</topic><topic>Nonlinear equations</topic><topic>Partial differential equations</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shawki, T.</creatorcontrib><creatorcontrib>Salmer, G.</creatorcontrib><creatorcontrib>El-Sayed, O.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shawki, T.</au><au>Salmer, G.</au><au>El-Sayed, O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>2-D simulation of degenerate hot electron transport in MODFETs including DX center trapping</atitle><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle><stitle>TCAD</stitle><date>1990-11-01</date><risdate>1990</risdate><volume>9</volume><issue>11</issue><spage>1150</spage><epage>1163</epage><pages>1150-1163</pages><issn>0278-0070</issn><eissn>1937-4151</eissn><coden>ITCSDI</coden><abstract>A comprehensive 2-D hydrodynamic energy model which is capable of describing nonstationary electron dynamics and nonisothermal transport within submicrometer MODFETs (TEGFETs or HEMTs) is presented. The model accounts for carrier degeneracy, deep DX center levels, and conduction outside the quantum well, thereby including bulk and parasitic MESFET effects. A technique for handling carrier degeneracy is presented. The authors also present two techniques developed to overcome the complexity of solving the coupling between the model nonlinear partial differential equations (PDEs). These cover DX center trapping kinetics and the energy derivatives in the Jacobian, particularly regarding the energy-conservation equation. The model is so informative that it highlights the main physical phenomena which govern device behavior such as velocity overshoots, stationary domain formation, buffer injection, back injection, and local longitudinal field inversion at the gate entrance of the channel. The model is systematically used to predict the DC and small-signal performance of submicrometer gate AlGaAs-GaAs MODFETs operating at room temperature.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/43.62752</doi><tpages>14</tpages></addata></record> |
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| identifier | ISSN: 0278-0070 |
| ispartof | IEEE transactions on computer-aided design of integrated circuits and systems, 1990-11, Vol.9 (11), p.1150-1163 |
| issn | 0278-0070 1937-4151 |
| language | eng |
| recordid | cdi_ieee_primary_62752 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Couplings Electronics Electrons Exact sciences and technology HEMTs Hydrodynamics Jacobian matrices Kinetic theory MESFETs MODFETs Nonlinear equations Partial differential equations Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | 2-D simulation of degenerate hot electron transport in MODFETs including DX center trapping |
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