Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs

A reduction of the threading dislocation density in AlN layers on a sapphire from 10 10 cm -2 to 10 9 cm -2 was achieved by applying epitaxial lateral overgrowth (ELO) of patterned AlN and sapphire templates. By varying the growth temperature, it is possible to influence the lateral growth rate and...

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Veröffentlicht in:	IEEE photonics technology letters 2012-09, Vol.24 (18), p.1603-1605
Hauptverfasser:	Kueller, V., Knauer, A., Reich, C., Mogilatenko, A., Weyers, M., Stellmach, J., Wernicke, T., Kneissl, M., Zhihong Yang, Chua, C. L., Johnson, N. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Aluminum nitride Conferences Density Epitaxial growth Epitaxial layers Epitaxy Fiber optics Light emitting diodes light emitting diodes (LEDs) Optical fibers Power generation Sapphire semiconductor materials Surface cracks
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