A Spin-Diode Logic Family

While most modern computing technologies utilize Si complementary metal-oxide-semiconductor (CMOS) transistors and the accompanying CMOS logic family, alternative devices and logic families exhibit significant performance advantages. Though heretofore impractical, diode logic allows for the executio...

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Veröffentlicht in:IEEE transactions on nanotechnology 2012-09, Vol.11 (5), p.1026-1032
Hauptverfasser: Friedman, J. S., Rangaraju, N., Ismail, Y. I., Wessels, B. W.
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container_end_page 1032
container_issue 5
container_start_page 1026
container_title IEEE transactions on nanotechnology
container_volume 11
creator Friedman, J. S.
Rangaraju, N.
Ismail, Y. I.
Wessels, B. W.
description While most modern computing technologies utilize Si complementary metal-oxide-semiconductor (CMOS) transistors and the accompanying CMOS logic family, alternative devices and logic families exhibit significant performance advantages. Though heretofore impractical, diode logic allows for the execution of logic circuits that are faster, smaller, and dissipate less power than conventional architectures. In this paper, magnetoresistive semiconductor heterojunctions are used to produce the first complete logic family based solely on diodes. We utilize the diode magnetoresistance states to create a binary logic family based on high and low currents in which a full range of logic functions is executed. The diode is used as a switch by manipulating its magnetoresistance with current-carrying wires that generate magnetic fields. Using this device structure, we present basis logic elements and complex circuits consisting of as few as 10% of the devices required in their conventional CMOS counterparts. This diode logic family is therefore an intriguing potential replacement for CMOS technology as Si scaling reaches its inherent limits.
doi_str_mv 10.1109/TNANO.2012.2211892
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_6262485</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6262485</ieee_id><sourcerecordid>2755084801</sourcerecordid><originalsourceid>FETCH-LOGICAL-c358t-265904babbec349262c187dc50720646da74a71cc255e0bcd91c039299e4fb7e3</originalsourceid><addsrcrecordid>eNpdkE9LAzEQxYMoWKsfQL0URPCydSb_NjmWalUo7cEK3kI2m5WU7W7dtId-e1NbPHiagfm9x5tHyA3CEBH042I2ms2HFJAOKUVUmp6QHmqOGYASp2kXTGZIxec5uYhxCYC5FKpHrkeD93VosqfQln4wbb-CG0zsKtS7S3JW2Tr6q-Psk4_J82L8mk3nL2_j0TRzTKhNRqXQwAtbFN4xrqmkDlVeOgE5BcllaXNuc3SOCuGhcKVGB0xTrT2vityzPnk4-K679nvr48asQnS-rm3j2200iExyyFFgQu_-oct22zUpnUFgiqNiUieKHijXtTF2vjLrLqxst0uQ2bdlftsy-7bMsa0kuj9a2-hsXXW2cSH-KWmKwEFB4m4PXPDe_51lepsrwX4AWBZu1A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1038418369</pqid></control><display><type>article</type><title>A Spin-Diode Logic Family</title><source>IEEE Electronic Library (IEL)</source><creator>Friedman, J. S. ; Rangaraju, N. ; Ismail, Y. I. ; Wessels, B. W.</creator><creatorcontrib>Friedman, J. S. ; Rangaraju, N. ; Ismail, Y. I. ; Wessels, B. W.</creatorcontrib><description>While most modern computing technologies utilize Si complementary metal-oxide-semiconductor (CMOS) transistors and the accompanying CMOS logic family, alternative devices and logic families exhibit significant performance advantages. Though heretofore impractical, diode logic allows for the execution of logic circuits that are faster, smaller, and dissipate less power than conventional architectures. In this paper, magnetoresistive semiconductor heterojunctions are used to produce the first complete logic family based solely on diodes. We utilize the diode magnetoresistance states to create a binary logic family based on high and low currents in which a full range of logic functions is executed. The diode is used as a switch by manipulating its magnetoresistance with current-carrying wires that generate magnetic fields. Using this device structure, we present basis logic elements and complex circuits consisting of as few as 10% of the devices required in their conventional CMOS counterparts. This diode logic family is therefore an intriguing potential replacement for CMOS technology as Si scaling reaches its inherent limits.</description><identifier>ISSN: 1536-125X</identifier><identifier>EISSN: 1941-0085</identifier><identifier>DOI: 10.1109/TNANO.2012.2211892</identifier><identifier>CODEN: ITNECU</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Beyond CMOS computing ; Circuit properties ; CMOS ; CMOS integrated circuits ; Design. Technologies. Operation analysis. Testing ; Devices ; Digital circuits ; diode logic ; Diodes ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Integrated circuits ; Logic ; logic circuits ; Logic gates ; Magnetic fields ; Magnetoresistance ; Magnetoresistive devices ; Magnetoresistivity ; R&amp;D ; Research &amp; development ; Semiconductor diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductors ; Silicon ; spintronics ; Transistors ; Wires</subject><ispartof>IEEE transactions on nanotechnology, 2012-09, Vol.11 (5), p.1026-1032</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Sep 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-265904babbec349262c187dc50720646da74a71cc255e0bcd91c039299e4fb7e3</citedby><cites>FETCH-LOGICAL-c358t-265904babbec349262c187dc50720646da74a71cc255e0bcd91c039299e4fb7e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6262485$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6262485$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=26404080$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Friedman, J. S.</creatorcontrib><creatorcontrib>Rangaraju, N.</creatorcontrib><creatorcontrib>Ismail, Y. I.</creatorcontrib><creatorcontrib>Wessels, B. W.</creatorcontrib><title>A Spin-Diode Logic Family</title><title>IEEE transactions on nanotechnology</title><addtitle>TNANO</addtitle><description>While most modern computing technologies utilize Si complementary metal-oxide-semiconductor (CMOS) transistors and the accompanying CMOS logic family, alternative devices and logic families exhibit significant performance advantages. Though heretofore impractical, diode logic allows for the execution of logic circuits that are faster, smaller, and dissipate less power than conventional architectures. In this paper, magnetoresistive semiconductor heterojunctions are used to produce the first complete logic family based solely on diodes. We utilize the diode magnetoresistance states to create a binary logic family based on high and low currents in which a full range of logic functions is executed. The diode is used as a switch by manipulating its magnetoresistance with current-carrying wires that generate magnetic fields. Using this device structure, we present basis logic elements and complex circuits consisting of as few as 10% of the devices required in their conventional CMOS counterparts. This diode logic family is therefore an intriguing potential replacement for CMOS technology as Si scaling reaches its inherent limits.</description><subject>Applied sciences</subject><subject>Beyond CMOS computing</subject><subject>Circuit properties</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Digital circuits</subject><subject>diode logic</subject><subject>Diodes</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Logic</subject><subject>logic circuits</subject><subject>Logic gates</subject><subject>Magnetic fields</subject><subject>Magnetoresistance</subject><subject>Magnetoresistive devices</subject><subject>Magnetoresistivity</subject><subject>R&amp;D</subject><subject>Research &amp; development</subject><subject>Semiconductor diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Silicon</subject><subject>spintronics</subject><subject>Transistors</subject><subject>Wires</subject><issn>1536-125X</issn><issn>1941-0085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE9LAzEQxYMoWKsfQL0URPCydSb_NjmWalUo7cEK3kI2m5WU7W7dtId-e1NbPHiagfm9x5tHyA3CEBH042I2ms2HFJAOKUVUmp6QHmqOGYASp2kXTGZIxec5uYhxCYC5FKpHrkeD93VosqfQln4wbb-CG0zsKtS7S3JW2Tr6q-Psk4_J82L8mk3nL2_j0TRzTKhNRqXQwAtbFN4xrqmkDlVeOgE5BcllaXNuc3SOCuGhcKVGB0xTrT2vityzPnk4-K679nvr48asQnS-rm3j2200iExyyFFgQu_-oct22zUpnUFgiqNiUieKHijXtTF2vjLrLqxst0uQ2bdlftsy-7bMsa0kuj9a2-hsXXW2cSH-KWmKwEFB4m4PXPDe_51lepsrwX4AWBZu1A</recordid><startdate>20120901</startdate><enddate>20120901</enddate><creator>Friedman, J. S.</creator><creator>Rangaraju, N.</creator><creator>Ismail, Y. I.</creator><creator>Wessels, B. W.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20120901</creationdate><title>A Spin-Diode Logic Family</title><author>Friedman, J. S. ; Rangaraju, N. ; Ismail, Y. I. ; Wessels, B. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-265904babbec349262c187dc50720646da74a71cc255e0bcd91c039299e4fb7e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Beyond CMOS computing</topic><topic>Circuit properties</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Devices</topic><topic>Digital circuits</topic><topic>diode logic</topic><topic>Diodes</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Logic</topic><topic>logic circuits</topic><topic>Logic gates</topic><topic>Magnetic fields</topic><topic>Magnetoresistance</topic><topic>Magnetoresistive devices</topic><topic>Magnetoresistivity</topic><topic>R&amp;D</topic><topic>Research &amp; development</topic><topic>Semiconductor diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductors</topic><topic>Silicon</topic><topic>spintronics</topic><topic>Transistors</topic><topic>Wires</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Friedman, J. S.</creatorcontrib><creatorcontrib>Rangaraju, N.</creatorcontrib><creatorcontrib>Ismail, Y. I.</creatorcontrib><creatorcontrib>Wessels, B. W.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Friedman, J. S.</au><au>Rangaraju, N.</au><au>Ismail, Y. I.</au><au>Wessels, B. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Spin-Diode Logic Family</atitle><jtitle>IEEE transactions on nanotechnology</jtitle><stitle>TNANO</stitle><date>2012-09-01</date><risdate>2012</risdate><volume>11</volume><issue>5</issue><spage>1026</spage><epage>1032</epage><pages>1026-1032</pages><issn>1536-125X</issn><eissn>1941-0085</eissn><coden>ITNECU</coden><abstract>While most modern computing technologies utilize Si complementary metal-oxide-semiconductor (CMOS) transistors and the accompanying CMOS logic family, alternative devices and logic families exhibit significant performance advantages. Though heretofore impractical, diode logic allows for the execution of logic circuits that are faster, smaller, and dissipate less power than conventional architectures. In this paper, magnetoresistive semiconductor heterojunctions are used to produce the first complete logic family based solely on diodes. We utilize the diode magnetoresistance states to create a binary logic family based on high and low currents in which a full range of logic functions is executed. The diode is used as a switch by manipulating its magnetoresistance with current-carrying wires that generate magnetic fields. Using this device structure, we present basis logic elements and complex circuits consisting of as few as 10% of the devices required in their conventional CMOS counterparts. This diode logic family is therefore an intriguing potential replacement for CMOS technology as Si scaling reaches its inherent limits.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TNANO.2012.2211892</doi><tpages>7</tpages></addata></record>
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1941-0085
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subjects Applied sciences
Beyond CMOS computing
Circuit properties
CMOS
CMOS integrated circuits
Design. Technologies. Operation analysis. Testing
Devices
Digital circuits
diode logic
Diodes
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Integrated circuits
Logic
logic circuits
Logic gates
Magnetic fields
Magnetoresistance
Magnetoresistive devices
Magnetoresistivity
R&D
Research & development
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Silicon
spintronics
Transistors
Wires
title A Spin-Diode Logic Family
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T23%3A13%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Spin-Diode%20Logic%20Family&rft.jtitle=IEEE%20transactions%20on%20nanotechnology&rft.au=Friedman,%20J.%20S.&rft.date=2012-09-01&rft.volume=11&rft.issue=5&rft.spage=1026&rft.epage=1032&rft.pages=1026-1032&rft.issn=1536-125X&rft.eissn=1941-0085&rft.coden=ITNECU&rft_id=info:doi/10.1109/TNANO.2012.2211892&rft_dat=%3Cproquest_RIE%3E2755084801%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1038418369&rft_id=info:pmid/&rft_ieee_id=6262485&rfr_iscdi=true