The evolution of low noise devices and amplifiers
This paper traces the development of low noise devices and amplifiers. The device technology changed significantly over time starting with the vacuum tube, then varactor diode parametric amplifiers, and evolving to the three terminal solid state transistor. Technological transistor innovations lower...
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| description | This paper traces the development of low noise devices and amplifiers. The device technology changed significantly over time starting with the vacuum tube, then varactor diode parametric amplifiers, and evolving to the three terminal solid state transistor. Technological transistor innovations lowered the low noise amplifier (LNA) noise figure and raised the frequency of operation. Devices include the bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), complimentary metal oxide semiconductor (CMOS) transistor, field effect transistor (FET), high electron mobility transistor (HEMT), pseudomorphic high electron transistor (PHEMT), and metamorphic high electron mobility transistor (MHEMT). LNA semiconductors include Silicon (Si), Gallium Arsenide (GaAs), Indium Phosphide (InP), and Gallium Nitride (GaN) and the various heterojunctions of these semiconductors improve the performance |
| doi_str_mv | 10.1109/MWSYM.2012.6258248 |
| format | Conference Proceeding |
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The device technology changed significantly over time starting with the vacuum tube, then varactor diode parametric amplifiers, and evolving to the three terminal solid state transistor. Technological transistor innovations lowered the low noise amplifier (LNA) noise figure and raised the frequency of operation. Devices include the bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), complimentary metal oxide semiconductor (CMOS) transistor, field effect transistor (FET), high electron mobility transistor (HEMT), pseudomorphic high electron transistor (PHEMT), and metamorphic high electron mobility transistor (MHEMT). 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The device technology changed significantly over time starting with the vacuum tube, then varactor diode parametric amplifiers, and evolving to the three terminal solid state transistor. Technological transistor innovations lowered the low noise amplifier (LNA) noise figure and raised the frequency of operation. Devices include the bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), complimentary metal oxide semiconductor (CMOS) transistor, field effect transistor (FET), high electron mobility transistor (HEMT), pseudomorphic high electron transistor (PHEMT), and metamorphic high electron mobility transistor (MHEMT). LNA semiconductors include Silicon (Si), Gallium Arsenide (GaAs), Indium Phosphide (InP), and Gallium Nitride (GaN) and the various heterojunctions of these semiconductors improve the performance</description><subject>bipolar junction transistor (BJT)</subject><subject>CMOS integrated circuits</subject><subject>complimentary metal oxide semiconductor (CMOS) transistors</subject><subject>field effect transistor (FET)</subject><subject>GaAs</subject><subject>Gallium arsenide</subject><subject>GaN</subject><subject>HEMTs</subject><subject>Low noise amplifiers (LNA)</subject><subject>metamorphic high electron mobility transistor (MHEMT)</subject><subject>monolithic microwave integrated circuit (MMIC)</subject><subject>Noise</subject><subject>Noise figure</subject><subject>parametric amplifier</subject><subject>pseudomorphic high electron transistor (PHEMT)</subject><subject>vacuum tubes</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>1467310859</isbn><isbn>9781467310857</isbn><isbn>1467310867</isbn><isbn>1467310875</isbn><isbn>9781467310864</isbn><isbn>9781467310888</isbn><isbn>1467310883</isbn><isbn>9781467310871</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFj8tKw0AUhscbGGtfQDfzAknPmfsspXiDli6sqKsyTc7gSJqUTK349goW_Dff4oMPfsauECpE8JP5y9PbvBKAojJCO6HcEbtAZaxEcMYes0Joa0or0Jz8C-1PWQGofGmUfj1n45w_4HfWIXpXMFy-E6d9337uUt_xPvK2_-JdnzLxhvappsxD1_Cw2bYpJhryJTuLoc00PnDEnu9ul9OHcra4f5zezMoapd-VQoBsTC28c6hD8N5Ipcwa1sGSDwYjonZSecDYWCBRhwDgIkQQMgDWcsSu_7qJiFbbIW3C8L06XJc_ZBRHeQ</recordid><startdate>201206</startdate><enddate>201206</enddate><creator>Niehenke, Edward C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201206</creationdate><title>The evolution of low noise devices and amplifiers</title><author>Niehenke, Edward C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c139t-2203d6c298815aa9963446b0ba7e9a61f115834901fd70e2caa008f0f023a01c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>bipolar junction transistor (BJT)</topic><topic>CMOS integrated circuits</topic><topic>complimentary metal oxide semiconductor (CMOS) transistors</topic><topic>field effect transistor (FET)</topic><topic>GaAs</topic><topic>Gallium arsenide</topic><topic>GaN</topic><topic>HEMTs</topic><topic>Low noise amplifiers (LNA)</topic><topic>metamorphic high electron mobility transistor (MHEMT)</topic><topic>monolithic microwave integrated circuit (MMIC)</topic><topic>Noise</topic><topic>Noise figure</topic><topic>parametric amplifier</topic><topic>pseudomorphic high electron transistor (PHEMT)</topic><topic>vacuum tubes</topic><toplevel>online_resources</toplevel><creatorcontrib>Niehenke, Edward C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Niehenke, Edward C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The evolution of low noise devices and amplifiers</atitle><btitle>2012 IEEE/MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>2012-06</date><risdate>2012</risdate><spage>1</spage><epage>3</epage><pages>1-3</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>1467310859</isbn><isbn>9781467310857</isbn><eisbn>1467310867</eisbn><eisbn>1467310875</eisbn><eisbn>9781467310864</eisbn><eisbn>9781467310888</eisbn><eisbn>1467310883</eisbn><eisbn>9781467310871</eisbn><abstract>This paper traces the development of low noise devices and amplifiers. The device technology changed significantly over time starting with the vacuum tube, then varactor diode parametric amplifiers, and evolving to the three terminal solid state transistor. Technological transistor innovations lowered the low noise amplifier (LNA) noise figure and raised the frequency of operation. Devices include the bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), complimentary metal oxide semiconductor (CMOS) transistor, field effect transistor (FET), high electron mobility transistor (HEMT), pseudomorphic high electron transistor (PHEMT), and metamorphic high electron mobility transistor (MHEMT). LNA semiconductors include Silicon (Si), Gallium Arsenide (GaAs), Indium Phosphide (InP), and Gallium Nitride (GaN) and the various heterojunctions of these semiconductors improve the performance</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2012.6258248</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0149-645X |
| ispartof | 2012 IEEE/MTT-S International Microwave Symposium Digest, 2012, p.1-3 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_6258248 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | bipolar junction transistor (BJT) CMOS integrated circuits complimentary metal oxide semiconductor (CMOS) transistors field effect transistor (FET) GaAs Gallium arsenide GaN HEMTs Low noise amplifiers (LNA) metamorphic high electron mobility transistor (MHEMT) monolithic microwave integrated circuit (MMIC) Noise Noise figure parametric amplifier pseudomorphic high electron transistor (PHEMT) vacuum tubes |
| title | The evolution of low noise devices and amplifiers |
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