Comparison of mechanical stresses of Cu Through-Silicon Via (TSV) samples fabricated by Hynix vs. SEMATECH using synchrotron X-ray microdiffraction for 3-D integration and reliability

One key to enable the successful implementation of 3-D interconnects using Through-Silicon Via (TSV) is the control of the mechanical stresses. The synchrotron-sourced X-ray microdiffraction technique has been recognized to allow some important advantages compared to other techniques. Using this app...

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Bibliographische Detailangaben

Hauptverfasser:	Budiman, A. S., Shin, H., Kim, B.-J, Hwang, S.-H, Son, H.-Y, Suh, M.-S, Chung, Q.-H, Byun, K.-Y, Joo, Y.-C, Caramto, R., Smith, L., Kunz, M., Tamura, N.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Reliability Silicon Stress Stress measurement Temperature measurement Through-silicon vias
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