Measurement and analysis of thermal stresses in 3-D integrated structures containing through-silicon-vias

In this work, experimental measurements and numerical analysis of the thermal stresses in TSV structures are presented. The stresses are measured using the micro-Raman spectroscopy and the precision bending beam technique. Together, the two methods provide a complementary approach for characterizing...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Tengfei Jiang, Suk-Kyu Ryu, Qiu Zhao, Im, J., Ho-Young Son, Kwang-Yoo Byun, Rui Huang, Ho, P. S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Semiconductor device measurement Silicon Stress Stress measurement Temperature measurement Thermal stresses Through-silicon vias
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!