Accurate electrical simulation and design optimization for silicon interposer considering the MOS effect and eddy currents in the silicon substrate

In this paper, a group of coplanar lines on a silicon dioxide insulating layer on a nominally doped silicon substrate is simulated and measured. Electrical parameters extracted from published data are used and lead to substantially improved agreement with measurements. In addition, several models of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jing Zhou, Lixi Wan, Fengwei Dai, Huijuan Wang, Chongshen Song, Tianmin Du, Yanbiao Chu, Maoyun Pan, Guidotti, D., Liqiang Cao, Daquan Yu
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Insertion loss Permittivity measurement Power transmission lines Silicon Substrates Through-silicon vias Transmission line measurements
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