Atom Probe Tomography for 3D-dopant analysis in FinFET devices

As the nano scale device performance depends on the detailed engineering of the dopant distribution, advanced doping processes are required. Progressing towards 3D-structures like FinFETs, studying the dopant gate overlap and conformality of doping calls for metrology with 3D-resolution and the abil...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kambham, A. K., Zschaetzsch, G., Sasaki, Y., Togo, M., Horiguchi, N., Mody, J., Florakis, A., Gajula, D. R., Kumar, A., Gilbert, M., Vandervorst, W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	3D-dopant profile Conformality Doping profiles FinFET FinFETs Gate over lap. Atom probe tomography Logic gates Performance evaluation Probes Silicon
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!