Comprehensive modeling of NAND flash memory reliability: Endurance and data retention

A reliability modeling solution including endurance and data retention is developed for NAND Floating Gate Flash memory. Endurance model with trap generation considers the tunneling oxide quality distribution with process effect. Electric field and tunneling current effect also have been included. T...

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Bibliographische Detailangaben

Hauptverfasser:	Zhiliang Xia, Dae Sin Kim, Narae Jeong, Young-Gu Kim, Jae-Ho Kim, Keun-Ho Lee, Young-Kwan Park, Chilhee Chung, Hwan Lee, Jungin Han
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Data models Data Retention Degradation Endurance Flash memory Flash Reliability Next generation networking Oxide Quality Reliability Substrates Threshold voltage Tunneling
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