Clarification of the degradation modes of an InP-based semiconductor MZ modulator
We clarified the degradation modes of an InP-based semiconductor optical Mach-Zehnder modulator (MZM) using high-power light-injected accelerated aging tests. Degradation clearly occurred at the light injected side of the edge on the electric field applied region. We found that the degradation thres...
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| creator | Mawatari, H. Yasui, T. Watanabe, K. Ishikawa, M. Yamada, E. Shibata, Y. Ishii, H. |
| description | We clarified the degradation modes of an InP-based semiconductor optical Mach-Zehnder modulator (MZM) using high-power light-injected accelerated aging tests. Degradation clearly occurred at the light injected side of the edge on the electric field applied region. We found that the degradation threshold depends strongly on temperature, wavelength and bias voltage. By correlating these parameters, we propose a degradation model based on the concentration of the optical absorption current, which depends on the optical absorption coefficient. By employing the degradation model, we obtained the degradation activation energy for a semiconductor MZM for the first time, and the value was 0.45 eV. These results indicate that a semiconductor MZM is sufficiently reliable for use in actual optical communication systems. |
| doi_str_mv | 10.1109/IRPS.2012.6241884 |
| format | Conference Proceeding |
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Degradation clearly occurred at the light injected side of the edge on the electric field applied region. We found that the degradation threshold depends strongly on temperature, wavelength and bias voltage. By correlating these parameters, we propose a degradation model based on the concentration of the optical absorption current, which depends on the optical absorption coefficient. By employing the degradation model, we obtained the degradation activation energy for a semiconductor MZM for the first time, and the value was 0.45 eV. These results indicate that a semiconductor MZM is sufficiently reliable for use in actual optical communication systems.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 145771678X</identifier><identifier>ISBN: 9781457716782</identifier><identifier>EISSN: 1938-1891</identifier><identifier>EISBN: 1457716801</identifier><identifier>EISBN: 9781457716799</identifier><identifier>EISBN: 9781457716805</identifier><identifier>EISBN: 1457716798</identifier><identifier>DOI: 10.1109/IRPS.2012.6241884</identifier><language>eng ; jpn</language><publisher>IEEE</publisher><subject>Absorption ; absorption current ; Accelerated aging ; activation energy ; Degradation ; degradation mode ; Modulation ; Optical losses ; Optical waveguides ; semiconductor MZM ; Temperature measurement</subject><ispartof>2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.CD.7.1-CD.7.5</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6241884$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6241884$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mawatari, H.</creatorcontrib><creatorcontrib>Yasui, T.</creatorcontrib><creatorcontrib>Watanabe, K.</creatorcontrib><creatorcontrib>Ishikawa, M.</creatorcontrib><creatorcontrib>Yamada, E.</creatorcontrib><creatorcontrib>Shibata, Y.</creatorcontrib><creatorcontrib>Ishii, H.</creatorcontrib><title>Clarification of the degradation modes of an InP-based semiconductor MZ modulator</title><title>2012 IEEE International Reliability Physics Symposium (IRPS)</title><addtitle>IRPS</addtitle><description>We clarified the degradation modes of an InP-based semiconductor optical Mach-Zehnder modulator (MZM) using high-power light-injected accelerated aging tests. Degradation clearly occurred at the light injected side of the edge on the electric field applied region. We found that the degradation threshold depends strongly on temperature, wavelength and bias voltage. By correlating these parameters, we propose a degradation model based on the concentration of the optical absorption current, which depends on the optical absorption coefficient. By employing the degradation model, we obtained the degradation activation energy for a semiconductor MZM for the first time, and the value was 0.45 eV. These results indicate that a semiconductor MZM is sufficiently reliable for use in actual optical communication systems.</description><subject>Absorption</subject><subject>absorption current</subject><subject>Accelerated aging</subject><subject>activation energy</subject><subject>Degradation</subject><subject>degradation mode</subject><subject>Modulation</subject><subject>Optical losses</subject><subject>Optical waveguides</subject><subject>semiconductor MZM</subject><subject>Temperature measurement</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>145771678X</isbn><isbn>9781457716782</isbn><isbn>1457716801</isbn><isbn>9781457716799</isbn><isbn>9781457716805</isbn><isbn>1457716798</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9kElPwzAQhc0mUUp_AOKSP5DgsR0vRxSxRCqibBLiUjn2BIyyoDg98O9J1Yp3eZr3jUajR8gF0AyAmqvyefWSMQosk0yA1uKAnIHIlQKpKRySGRiuU9AGjv6B0u_HE8gFpIoyeUoWMX7TSUoDE3xGnorGDqEOzo6h75K-TsYvTDx-Dtbvorb3GLfAdknZrdLKRvRJxDa4vvMbN_ZD8vCxXds0dhrOyUltm4iLvc_J2-3Na3GfLh_vyuJ6mQbI5ZiiVVbJynhHc01rKhRj6MF47iTU6LCqLOegqNbT-4ZLrQRngAKMkdx7PieXu7sBEdc_Q2jt8LveV8P_AHuWUxg</recordid><startdate>201204</startdate><enddate>201204</enddate><creator>Mawatari, H.</creator><creator>Yasui, T.</creator><creator>Watanabe, K.</creator><creator>Ishikawa, M.</creator><creator>Yamada, E.</creator><creator>Shibata, Y.</creator><creator>Ishii, H.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201204</creationdate><title>Clarification of the degradation modes of an InP-based semiconductor MZ modulator</title><author>Mawatari, H. ; Yasui, T. ; Watanabe, K. ; Ishikawa, M. ; Yamada, E. ; Shibata, Y. ; Ishii, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i156t-ea7a76b9dc0580f04722ed19d3c61fecebba3317088154936874321e419963dd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng ; jpn</language><creationdate>2012</creationdate><topic>Absorption</topic><topic>absorption current</topic><topic>Accelerated aging</topic><topic>activation energy</topic><topic>Degradation</topic><topic>degradation mode</topic><topic>Modulation</topic><topic>Optical losses</topic><topic>Optical waveguides</topic><topic>semiconductor MZM</topic><topic>Temperature measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Mawatari, H.</creatorcontrib><creatorcontrib>Yasui, T.</creatorcontrib><creatorcontrib>Watanabe, K.</creatorcontrib><creatorcontrib>Ishikawa, M.</creatorcontrib><creatorcontrib>Yamada, E.</creatorcontrib><creatorcontrib>Shibata, Y.</creatorcontrib><creatorcontrib>Ishii, H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mawatari, H.</au><au>Yasui, T.</au><au>Watanabe, K.</au><au>Ishikawa, M.</au><au>Yamada, E.</au><au>Shibata, Y.</au><au>Ishii, H.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Clarification of the degradation modes of an InP-based semiconductor MZ modulator</atitle><btitle>2012 IEEE International Reliability Physics Symposium (IRPS)</btitle><stitle>IRPS</stitle><date>2012-04</date><risdate>2012</risdate><spage>CD.7.1</spage><epage>CD.7.5</epage><pages>CD.7.1-CD.7.5</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>145771678X</isbn><isbn>9781457716782</isbn><eisbn>1457716801</eisbn><eisbn>9781457716799</eisbn><eisbn>9781457716805</eisbn><eisbn>1457716798</eisbn><abstract>We clarified the degradation modes of an InP-based semiconductor optical Mach-Zehnder modulator (MZM) using high-power light-injected accelerated aging tests. Degradation clearly occurred at the light injected side of the edge on the electric field applied region. We found that the degradation threshold depends strongly on temperature, wavelength and bias voltage. By correlating these parameters, we propose a degradation model based on the concentration of the optical absorption current, which depends on the optical absorption coefficient. By employing the degradation model, we obtained the degradation activation energy for a semiconductor MZM for the first time, and the value was 0.45 eV. These results indicate that a semiconductor MZM is sufficiently reliable for use in actual optical communication systems.</abstract><pub>IEEE</pub><doi>10.1109/IRPS.2012.6241884</doi></addata></record> |
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| identifier | ISSN: 1541-7026 |
| ispartof | 2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.CD.7.1-CD.7.5 |
| issn | 1541-7026 1938-1891 |
| language | eng ; jpn |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Absorption absorption current Accelerated aging activation energy Degradation degradation mode Modulation Optical losses Optical waveguides semiconductor MZM Temperature measurement |
| title | Clarification of the degradation modes of an InP-based semiconductor MZ modulator |
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