Geometry, kinetics, and short length effects of electromigration in Mn doped Cu interconnects at the 32nm technology node

Geometry, kinetics, and short length effects of electromigration in Mn doped Cu interconnects at the 32nm technology node

Mn doping in Cu seed has been used to improve EM performance at the 32nm technology node. This paper will show that on an optimized process with CuMn there were different degrees of EM enhancement for geometric variations including line width and electron flow direction. In addition, kinetics experi...

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Hauptverfasser: Christiansen, C., Baozhen Li, Angyal, M., Kane, T., McGahay, V., Yun Yu Wang, Shaoning Yao
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CuMn
Current density
Electromigration
Geometry
Integrated circuit interconnections
Kinetic theory
line
Manganese
short length
Stress
via
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Zusammenfassung:Mn doping in Cu seed has been used to improve EM performance at the 32nm technology node. This paper will show that on an optimized process with CuMn there were different degrees of EM enhancement for geometric variations including line width and electron flow direction. In addition, kinetics experiments on several geometries resulted in activation energies in the range of 0.95-1.33eV. Finally, the Blech threshold (jL)c=338mA/um was derived from the experimental data on various line lengths and current densities.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2012.6241856