Nonlinear AlGaN/GaN HEMT model using multiple artificial neural networks

In this work, a complete nonlinear-transistor-model extraction-method is described. As a case study, the AlGaN/GaN High Electron Mobility Transistor manufactured on SiC substrate is modeled. The parasitic components model is proposed, and its extraction results are presented. Low- and high-frequency...

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Bibliographische Detailangaben

Hauptverfasser:	Barmuta, P., Plonski, P., Czuba, K., Avolio, G., Schreurs, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	artificial neural network Decision support systems GaN HEMT nonlinear model temperature
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