Recessed Y-gate AlN/GaN/AlGaN DHFET with GaN cap layer at the gate edge
We have proposed and simulated recessed Y-gate AlN/GaN/AlGaN DHFET structure with GaN cap layer at drain side of the gate as well as compared its simulated characteristics with the conventional DHFET. The threshold voltage of the proposed device was increased 0.2V to the positive side. Use of GaN ca...
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| creator | Khan, M. S. I. Maruf, H. M. Mesbah Ahmed, M. Choudhury, M. A. |
| description | We have proposed and simulated recessed Y-gate AlN/GaN/AlGaN DHFET structure with GaN cap layer at drain side of the gate as well as compared its simulated characteristics with the conventional DHFET. The threshold voltage of the proposed device was increased 0.2V to the positive side. Use of GaN cap at the gate side-wall effectively reduced electric field concentration at the gate edge of the proposed device compared to the conventional one, which also ensured the leakage current of the proposed device was 1 order less than that of conventional device. The forward characteristics of proposed device are slightly degraded due to the recessed gate structure which entered the channel region and 1-nm thin layer of AlN layer. |
| doi_str_mv | 10.1109/PEOCO.2012.6230879 |
| format | Conference Proceeding |
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S. I. ; Maruf, H. M. Mesbah ; Ahmed, M. ; Choudhury, M. A.</creator><creatorcontrib>Khan, M. S. I. ; Maruf, H. M. Mesbah ; Ahmed, M. ; Choudhury, M. A.</creatorcontrib><description>We have proposed and simulated recessed Y-gate AlN/GaN/AlGaN DHFET structure with GaN cap layer at drain side of the gate as well as compared its simulated characteristics with the conventional DHFET. The threshold voltage of the proposed device was increased 0.2V to the positive side. Use of GaN cap at the gate side-wall effectively reduced electric field concentration at the gate edge of the proposed device compared to the conventional one, which also ensured the leakage current of the proposed device was 1 order less than that of conventional device. The forward characteristics of proposed device are slightly degraded due to the recessed gate structure which entered the channel region and 1-nm thin layer of AlN layer.</description><identifier>ISBN: 9781467306607</identifier><identifier>ISBN: 1467306606</identifier><identifier>EISBN: 9781467306614</identifier><identifier>EISBN: 1467306622</identifier><identifier>EISBN: 9781467306621</identifier><identifier>EISBN: 1467306614</identifier><identifier>DOI: 10.1109/PEOCO.2012.6230879</identifier><language>eng</language><publisher>IEEE</publisher><subject>AlN/GaN/AlGaN double-heterostructure field-effect transistor (DHFET) ; Aluminum gallium nitride ; DH-HEMTs ; Electric fields ; enhancement-mode device ; Gallium nitride ; Logic gates ; MODFETs ; power device ; recessed gate structure</subject><ispartof>2012 IEEE International Power Engineering and Optimization Conference Melaka, Malaysia, 2012, p.302-305</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6230879$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6230879$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Khan, M. S. I.</creatorcontrib><creatorcontrib>Maruf, H. M. Mesbah</creatorcontrib><creatorcontrib>Ahmed, M.</creatorcontrib><creatorcontrib>Choudhury, M. A.</creatorcontrib><title>Recessed Y-gate AlN/GaN/AlGaN DHFET with GaN cap layer at the gate edge</title><title>2012 IEEE International Power Engineering and Optimization Conference Melaka, Malaysia</title><addtitle>PEOCO</addtitle><description>We have proposed and simulated recessed Y-gate AlN/GaN/AlGaN DHFET structure with GaN cap layer at drain side of the gate as well as compared its simulated characteristics with the conventional DHFET. The threshold voltage of the proposed device was increased 0.2V to the positive side. Use of GaN cap at the gate side-wall effectively reduced electric field concentration at the gate edge of the proposed device compared to the conventional one, which also ensured the leakage current of the proposed device was 1 order less than that of conventional device. The forward characteristics of proposed device are slightly degraded due to the recessed gate structure which entered the channel region and 1-nm thin layer of AlN layer.</description><subject>AlN/GaN/AlGaN double-heterostructure field-effect transistor (DHFET)</subject><subject>Aluminum gallium nitride</subject><subject>DH-HEMTs</subject><subject>Electric fields</subject><subject>enhancement-mode device</subject><subject>Gallium nitride</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>power device</subject><subject>recessed gate structure</subject><isbn>9781467306607</isbn><isbn>1467306606</isbn><isbn>9781467306614</isbn><isbn>1467306622</isbn><isbn>9781467306621</isbn><isbn>1467306614</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVT01Lw0AUXBFBqfkDetk_kOS93XQ_jqHWVCiNSC-eyuvmbRuJUJKA9N8btRfnMMMcZpgR4gEhQwSfvy7rRZ0pQJUZpcFZfyUSbx0WxmowBovrfx7srUiG4QMm2Lma6-JOVG8ceBi4ke_pgUaWZbfJK9rkZTexfFo9L7fyqx2P8scGOsmOztxLGuV4ZPkb4ebA9-ImUjdwctGZ2E7JxSpd19XLolynrYcxtVZrP-11qCPpprDkODgTCiSwwNFYpoDkUXsHymiIuOd9JFIRQTVBz8TjX23LzLtT335Sf95d3utvqahKXg</recordid><startdate>201206</startdate><enddate>201206</enddate><creator>Khan, M. S. I.</creator><creator>Maruf, H. M. Mesbah</creator><creator>Ahmed, M.</creator><creator>Choudhury, M. A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201206</creationdate><title>Recessed Y-gate AlN/GaN/AlGaN DHFET with GaN cap layer at the gate edge</title><author>Khan, M. S. I. ; Maruf, H. M. Mesbah ; Ahmed, M. ; Choudhury, M. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-77339012813fa3d47a8ec86c41a070ef67eac1a9139802630f1bebfaa2f102dc3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>AlN/GaN/AlGaN double-heterostructure field-effect transistor (DHFET)</topic><topic>Aluminum gallium nitride</topic><topic>DH-HEMTs</topic><topic>Electric fields</topic><topic>enhancement-mode device</topic><topic>Gallium nitride</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>power device</topic><topic>recessed gate structure</topic><toplevel>online_resources</toplevel><creatorcontrib>Khan, M. S. I.</creatorcontrib><creatorcontrib>Maruf, H. M. Mesbah</creatorcontrib><creatorcontrib>Ahmed, M.</creatorcontrib><creatorcontrib>Choudhury, M. A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Khan, M. S. I.</au><au>Maruf, H. M. Mesbah</au><au>Ahmed, M.</au><au>Choudhury, M. A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Recessed Y-gate AlN/GaN/AlGaN DHFET with GaN cap layer at the gate edge</atitle><btitle>2012 IEEE International Power Engineering and Optimization Conference Melaka, Malaysia</btitle><stitle>PEOCO</stitle><date>2012-06</date><risdate>2012</risdate><spage>302</spage><epage>305</epage><pages>302-305</pages><isbn>9781467306607</isbn><isbn>1467306606</isbn><eisbn>9781467306614</eisbn><eisbn>1467306622</eisbn><eisbn>9781467306621</eisbn><eisbn>1467306614</eisbn><abstract>We have proposed and simulated recessed Y-gate AlN/GaN/AlGaN DHFET structure with GaN cap layer at drain side of the gate as well as compared its simulated characteristics with the conventional DHFET. The threshold voltage of the proposed device was increased 0.2V to the positive side. Use of GaN cap at the gate side-wall effectively reduced electric field concentration at the gate edge of the proposed device compared to the conventional one, which also ensured the leakage current of the proposed device was 1 order less than that of conventional device. The forward characteristics of proposed device are slightly degraded due to the recessed gate structure which entered the channel region and 1-nm thin layer of AlN layer.</abstract><pub>IEEE</pub><doi>10.1109/PEOCO.2012.6230879</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2012 IEEE International Power Engineering and Optimization Conference Melaka, Malaysia, 2012, p.302-305 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | AlN/GaN/AlGaN double-heterostructure field-effect transistor (DHFET) Aluminum gallium nitride DH-HEMTs Electric fields enhancement-mode device Gallium nitride Logic gates MODFETs power device recessed gate structure |
| title | Recessed Y-gate AlN/GaN/AlGaN DHFET with GaN cap layer at the gate edge |
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