Performance limits of MEMS switches for power electronics
Advances in semiconductor technology have brought the performance of power transistors near the physical limit. Substantial performance enhancement of power switches will therefore require either new materials, or new devices that obey fundamentally different limits. One of the new power devices tha...
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| creator | Steeneken, Peter G. Wunnicke, O. |
| description | Advances in semiconductor technology have brought the performance of power transistors near the physical limit. Substantial performance enhancement of power switches will therefore require either new materials, or new devices that obey fundamentally different limits. One of the new power devices that might offer an alternative to the transistor is the microelectromechanical (MEMS) switch. Here we analyze the potential of metal-contact MEMS switches for power electronics by exploring their physical performance limits and by benchmarking them against transistors. Based on a semi-empirical model we show that MEMS switches could outperform Si transistors for actuation voltages V act >;30 V and could even beat GaN for V act >;1000 V. Therefore we conclude that MEMS switch technology potentially offers an interesting alternative route towards high performance power devices, although switching time and safe operating area remain points of concern. |
| doi_str_mv | 10.1109/ISPSD.2012.6229110 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6229110</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6229110</ieee_id><sourcerecordid>6229110</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-244917610604c697044e3637db2585774a6da1aefe601e4712cc2a02c059e4973</originalsourceid><addsrcrecordid>eNpVUM1KAzEYjH9gqfsCeskL7Jov-yXZHKW2WmixsHouMf0WI9tuSRaKb2_AXpzLwMwwDMPYPYgKQNjHZbtpnyspQFZaSpu1C1ZY0wAqY0BZoy_ZBCzqUuTQ1T8P1XX2hK5L3Si8ZUVK3yLDKGkaMWF2Q7Eb4t4dPPE-7MOY-NDx9Xzd8nQKo_-ixHOAH4cTRU49-TEOh-DTHbvpXJ-oOPOUfSzm77PXcvX2spw9rcoARo2lRLRgdJ4g0GtrBCLVuja7T6mavBGd3jlw1JEWQGhAei-dkF4oS2hNPWUPf72BiLbHGPYu_mzPR9S_KXFLAA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Performance limits of MEMS switches for power electronics</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Steeneken, Peter G. ; Wunnicke, O.</creator><creatorcontrib>Steeneken, Peter G. ; Wunnicke, O.</creatorcontrib><description>Advances in semiconductor technology have brought the performance of power transistors near the physical limit. Substantial performance enhancement of power switches will therefore require either new materials, or new devices that obey fundamentally different limits. One of the new power devices that might offer an alternative to the transistor is the microelectromechanical (MEMS) switch. Here we analyze the potential of metal-contact MEMS switches for power electronics by exploring their physical performance limits and by benchmarking them against transistors. Based on a semi-empirical model we show that MEMS switches could outperform Si transistors for actuation voltages V act >;30 V and could even beat GaN for V act >;1000 V. Therefore we conclude that MEMS switch technology potentially offers an interesting alternative route towards high performance power devices, although switching time and safe operating area remain points of concern.</description><identifier>ISSN: 1063-6854</identifier><identifier>ISBN: 9781457715945</identifier><identifier>ISBN: 1457715945</identifier><identifier>EISSN: 1946-0201</identifier><identifier>EISBN: 9781457715976</identifier><identifier>EISBN: 145771597X</identifier><identifier>EISBN: 9781457715969</identifier><identifier>EISBN: 1457715961</identifier><identifier>DOI: 10.1109/ISPSD.2012.6229110</identifier><language>eng</language><publisher>IEEE</publisher><subject>Contacts ; Electric breakdown ; Force ; Mathematical model ; Micromechanical devices ; Microswitches ; Transistors</subject><ispartof>2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.417-420</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6229110$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6229110$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Steeneken, Peter G.</creatorcontrib><creatorcontrib>Wunnicke, O.</creatorcontrib><title>Performance limits of MEMS switches for power electronics</title><title>2012 24th International Symposium on Power Semiconductor Devices and ICs</title><addtitle>ISPSD</addtitle><description>Advances in semiconductor technology have brought the performance of power transistors near the physical limit. Substantial performance enhancement of power switches will therefore require either new materials, or new devices that obey fundamentally different limits. One of the new power devices that might offer an alternative to the transistor is the microelectromechanical (MEMS) switch. Here we analyze the potential of metal-contact MEMS switches for power electronics by exploring their physical performance limits and by benchmarking them against transistors. Based on a semi-empirical model we show that MEMS switches could outperform Si transistors for actuation voltages V act >;30 V and could even beat GaN for V act >;1000 V. Therefore we conclude that MEMS switch technology potentially offers an interesting alternative route towards high performance power devices, although switching time and safe operating area remain points of concern.</description><subject>Contacts</subject><subject>Electric breakdown</subject><subject>Force</subject><subject>Mathematical model</subject><subject>Micromechanical devices</subject><subject>Microswitches</subject><subject>Transistors</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9781457715945</isbn><isbn>1457715945</isbn><isbn>9781457715976</isbn><isbn>145771597X</isbn><isbn>9781457715969</isbn><isbn>1457715961</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUM1KAzEYjH9gqfsCeskL7Jov-yXZHKW2WmixsHouMf0WI9tuSRaKb2_AXpzLwMwwDMPYPYgKQNjHZbtpnyspQFZaSpu1C1ZY0wAqY0BZoy_ZBCzqUuTQ1T8P1XX2hK5L3Si8ZUVK3yLDKGkaMWF2Q7Eb4t4dPPE-7MOY-NDx9Xzd8nQKo_-ixHOAH4cTRU49-TEOh-DTHbvpXJ-oOPOUfSzm77PXcvX2spw9rcoARo2lRLRgdJ4g0GtrBCLVuja7T6mavBGd3jlw1JEWQGhAei-dkF4oS2hNPWUPf72BiLbHGPYu_mzPR9S_KXFLAA</recordid><startdate>201206</startdate><enddate>201206</enddate><creator>Steeneken, Peter G.</creator><creator>Wunnicke, O.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201206</creationdate><title>Performance limits of MEMS switches for power electronics</title><author>Steeneken, Peter G. ; Wunnicke, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-244917610604c697044e3637db2585774a6da1aefe601e4712cc2a02c059e4973</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Contacts</topic><topic>Electric breakdown</topic><topic>Force</topic><topic>Mathematical model</topic><topic>Micromechanical devices</topic><topic>Microswitches</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Steeneken, Peter G.</creatorcontrib><creatorcontrib>Wunnicke, O.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Steeneken, Peter G.</au><au>Wunnicke, O.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Performance limits of MEMS switches for power electronics</atitle><btitle>2012 24th International Symposium on Power Semiconductor Devices and ICs</btitle><stitle>ISPSD</stitle><date>2012-06</date><risdate>2012</risdate><spage>417</spage><epage>420</epage><pages>417-420</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9781457715945</isbn><isbn>1457715945</isbn><eisbn>9781457715976</eisbn><eisbn>145771597X</eisbn><eisbn>9781457715969</eisbn><eisbn>1457715961</eisbn><abstract>Advances in semiconductor technology have brought the performance of power transistors near the physical limit. Substantial performance enhancement of power switches will therefore require either new materials, or new devices that obey fundamentally different limits. One of the new power devices that might offer an alternative to the transistor is the microelectromechanical (MEMS) switch. Here we analyze the potential of metal-contact MEMS switches for power electronics by exploring their physical performance limits and by benchmarking them against transistors. Based on a semi-empirical model we show that MEMS switches could outperform Si transistors for actuation voltages V act >;30 V and could even beat GaN for V act >;1000 V. Therefore we conclude that MEMS switch technology potentially offers an interesting alternative route towards high performance power devices, although switching time and safe operating area remain points of concern.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2012.6229110</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.417-420 |
| issn | 1063-6854 1946-0201 |
| language | eng |
| recordid | cdi_ieee_primary_6229110 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Contacts Electric breakdown Force Mathematical model Micromechanical devices Microswitches Transistors |
| title | Performance limits of MEMS switches for power electronics |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T05%3A33%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Performance%20limits%20of%20MEMS%20switches%20for%20power%20electronics&rft.btitle=2012%2024th%20International%20Symposium%20on%20Power%20Semiconductor%20Devices%20and%20ICs&rft.au=Steeneken,%20Peter%20G.&rft.date=2012-06&rft.spage=417&rft.epage=420&rft.pages=417-420&rft.issn=1063-6854&rft.eissn=1946-0201&rft.isbn=9781457715945&rft.isbn_list=1457715945&rft_id=info:doi/10.1109/ISPSD.2012.6229110&rft_dat=%3Cieee_6IE%3E6229110%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781457715976&rft.eisbn_list=145771597X&rft.eisbn_list=9781457715969&rft.eisbn_list=1457715961&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6229110&rfr_iscdi=true |