Influence of dynamic switching on the robustness of power devices against cosmic radiation
For the first time, experiments and simulations for testing the influence of dynamic switching on the robustness of power devices against cosmic radiation are presented. Irradiation experiments of switching high power modules are performed, using pulsed proton or neutron beams. Thereby, the switchin...
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| creator | Haertl, A. Soelkner, G. Pfirsch, F. Brekel, W. Duetemeyer, T. |
| description | For the first time, experiments and simulations for testing the influence of dynamic switching on the robustness of power devices against cosmic radiation are presented. Irradiation experiments of switching high power modules are performed, using pulsed proton or neutron beams. Thereby, the switching frequency of the power modules is synchronized to the extraction frequency of particle beam pulses from the synchrotron. With this new experimental approach both 6.5kV IGBTs and free-wheeling diodes are studied under various switching conditions. Employing these experiments and also simulations based on semi-empirical models, we find a non-negligible contribution of these dynamic effects on the failure rate of high power devices induced by high-energy nucleon irradiation. |
| doi_str_mv | 10.1109/ISPSD.2012.6229094 |
| format | Conference Proceeding |
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Irradiation experiments of switching high power modules are performed, using pulsed proton or neutron beams. Thereby, the switching frequency of the power modules is synchronized to the extraction frequency of particle beam pulses from the synchrotron. With this new experimental approach both 6.5kV IGBTs and free-wheeling diodes are studied under various switching conditions. 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Employing these experiments and also simulations based on semi-empirical models, we find a non-negligible contribution of these dynamic effects on the failure rate of high power devices induced by high-energy nucleon irradiation.</description><subject>cosmic radiation</subject><subject>Electric fields</subject><subject>IGBT</subject><subject>Insulated gate bipolar transistors</subject><subject>Multichip modules</subject><subject>Particle beams</subject><subject>power devices</subject><subject>Protons</subject><subject>Robustness</subject><subject>Switches</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9781457715945</isbn><isbn>1457715945</isbn><isbn>9781457715976</isbn><isbn>145771597X</isbn><isbn>9781457715969</isbn><isbn>1457715961</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUMlOwzAUNJtEVfIDcPEPJNiO1yMqW6VKIBUuXCrbeWmNWqeKXar-PanohbnMYRaNBqFbSipKibmfzt_njxUjlFWSMUMMP0OFUZpyoRQVRslzNKKGy5IMpot_GheXg0ZkXUot-DUqUvomA5RgSpMR-prGdr2D6AF3LW4O0W6Cx2kfsl-FuMRdxHkFuO_cLuUIKR1t224PPW7gJ3hI2C5tiClj36VjtrdNsDl08QZdtXadoDjxGH0-P31MXsvZ28t08jArA1Uil0wCI2BrN6xWwJUC6zxrJfetc9oyrbXz3tRUGU1464ADa4zgBoQloqnrMbr76w0AsNj2YWP7w-L0VP0LkIxZvw</recordid><startdate>201206</startdate><enddate>201206</enddate><creator>Haertl, A.</creator><creator>Soelkner, G.</creator><creator>Pfirsch, F.</creator><creator>Brekel, W.</creator><creator>Duetemeyer, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201206</creationdate><title>Influence of dynamic switching on the robustness of power devices against cosmic radiation</title><author>Haertl, A. ; Soelkner, G. ; Pfirsch, F. ; Brekel, W. ; Duetemeyer, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-26e20ea3b9787e477eabc2f64cfbb8a2888bcc93179804fbe4e2d9549e5a05d33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>cosmic radiation</topic><topic>Electric fields</topic><topic>IGBT</topic><topic>Insulated gate bipolar transistors</topic><topic>Multichip modules</topic><topic>Particle beams</topic><topic>power devices</topic><topic>Protons</topic><topic>Robustness</topic><topic>Switches</topic><toplevel>online_resources</toplevel><creatorcontrib>Haertl, A.</creatorcontrib><creatorcontrib>Soelkner, G.</creatorcontrib><creatorcontrib>Pfirsch, F.</creatorcontrib><creatorcontrib>Brekel, W.</creatorcontrib><creatorcontrib>Duetemeyer, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Haertl, A.</au><au>Soelkner, G.</au><au>Pfirsch, F.</au><au>Brekel, W.</au><au>Duetemeyer, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Influence of dynamic switching on the robustness of power devices against cosmic radiation</atitle><btitle>2012 24th International Symposium on Power Semiconductor Devices and ICs</btitle><stitle>ISPSD</stitle><date>2012-06</date><risdate>2012</risdate><spage>353</spage><epage>356</epage><pages>353-356</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9781457715945</isbn><isbn>1457715945</isbn><eisbn>9781457715976</eisbn><eisbn>145771597X</eisbn><eisbn>9781457715969</eisbn><eisbn>1457715961</eisbn><abstract>For the first time, experiments and simulations for testing the influence of dynamic switching on the robustness of power devices against cosmic radiation are presented. Irradiation experiments of switching high power modules are performed, using pulsed proton or neutron beams. Thereby, the switching frequency of the power modules is synchronized to the extraction frequency of particle beam pulses from the synchrotron. With this new experimental approach both 6.5kV IGBTs and free-wheeling diodes are studied under various switching conditions. Employing these experiments and also simulations based on semi-empirical models, we find a non-negligible contribution of these dynamic effects on the failure rate of high power devices induced by high-energy nucleon irradiation.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2012.6229094</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.353-356 |
| issn | 1063-6854 1946-0201 |
| language | eng |
| recordid | cdi_ieee_primary_6229094 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | cosmic radiation Electric fields IGBT Insulated gate bipolar transistors Multichip modules Particle beams power devices Protons Robustness Switches |
| title | Influence of dynamic switching on the robustness of power devices against cosmic radiation |
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