Enhanced short-circuit performance of 3.3kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in NPT technology with RTA Anode

In this paper, we report the experimental results of a 3.3kV rated CIGBT (Clustered Insulated Gate Bipolar Transistor) with planar gates in non-punch through technology (NPT) with RTA anode. Previously it was reported that for identical turn-off losses the on-state voltage of the 3.3kV NPT-CIGBT is...

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Bibliographische Detailangaben

Hauptverfasser:	Balachandran, A., Sweet, M., Ngwendson, L., Sankara Narayanan, E.M., Ray, Shona, Quaresma, Henrique, Bruce, John
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anodes Bipolar Transistors Clustered IGBT (CIGBT) Current density Insulated Gate Bipolar transistor (IGBTs) Insulated gate bipolar transistors Logic gates Performance evaluation Power semiconductor devices Rapid Thermal Annealing (RTA) Thyristors
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