Selective Epitaxial Phosphorus-Doped SiGe Layers for Short-Channel Effect Reduction

Epitaxially grown silicon germanium layers are utilized in very high performance short channel MOSFETs. To reduce short-channel effects, the substrate doping concentration must be increased at the edges of the source and drain. These regions commonly called halos are typically created by ion implant...

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Bibliographische Detailangaben

Hauptverfasser:	Jeongwon Park, Balasubramanian, R., Jain, A., Riley, D., Juneja, H., Kuppurao, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Doping Epitaxial growth Nonhomogeneous media Performance evaluation Silicon Silicon germanium USA Councils
Online-Zugang:	Volltext bestellen
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