AlGaN/GaN HEMTs on Silicon With Hybrid Schottky-Ohmic Drain for High Breakdown Voltage and Low Leakage Current

In this letter, a hybrid Schottky-ohmic drain structure is proposed for AlGaN/GaN high-electron-mobility transistors on a Si substrate. Without additional photomasks and extra process steps, the hybrid drain design forms a Γ-shaped electrode to smooth the electric field distribution at the drain sid...

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