Marx-Type Solid-State Bipolar Modulator Topologies: Performance Comparison
The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and...
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| Veröffentlicht in: | IEEE transactions on plasma science 2012-10, Vol.40 (10), p.2603-2610 |
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| creator | Canacsinh, H. Redondo, L. M. Silva, J. F. |
| description | The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and switch hold-off voltages has been made. A circuit topology is obtained as a compromise in terms of operating performance, trigger simplicity, and switching losses. A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 μs pulse width and 5 μs relaxation time into resistive, capacitive, and inductive loads. |
| doi_str_mv | 10.1109/TPS.2012.2190944 |
| format | Article |
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A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 μs pulse width and 5 μs relaxation time into resistive, capacitive, and inductive loads.</description><identifier>ISSN: 0093-3813</identifier><identifier>EISSN: 1939-9375</identifier><identifier>DOI: 10.1109/TPS.2012.2190944</identifier><identifier>CODEN: ITPSBD</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitors ; Circuits ; Electric currents ; Electric power ; Frequencies ; High-voltage (HV) techniques ; Insulated gate bipolar transistors ; Marx generators ; Modulation ; Optical switches ; Plasma physics ; power semiconductor devices ; Prototypes ; pulsed power systems ; Semiconductor diodes ; Topology</subject><ispartof>IEEE transactions on plasma science, 2012-10, Vol.40 (10), p.2603-2610</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 μs pulse width and 5 μs relaxation time into resistive, capacitive, and inductive loads.</description><subject>Capacitors</subject><subject>Circuits</subject><subject>Electric currents</subject><subject>Electric power</subject><subject>Frequencies</subject><subject>High-voltage (HV) techniques</subject><subject>Insulated gate bipolar transistors</subject><subject>Marx generators</subject><subject>Modulation</subject><subject>Optical switches</subject><subject>Plasma physics</subject><subject>power semiconductor devices</subject><subject>Prototypes</subject><subject>pulsed power systems</subject><subject>Semiconductor diodes</subject><subject>Topology</subject><issn>0093-3813</issn><issn>1939-9375</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFbvgpeA59TZnd0m602Ln7RYaDyHTTIrKWk37qZg_71bKp4G3nneGXgYu-Yw4Rz0XbFcTQRwMRFcg5byhI24Rp1qzNQpGwFoTDHneM4uQlgDcKlAjNj7wviftNj3lKxc1zbpajADJY9t7zrjk4Vrdp0ZnE8KFxP31VK4T5bkrfMbs60pmblNb3wb3PaSnVnTBbr6m2P2-fxUzF7T-cfL2-xhntYS5JBqa-VU1EYSVRorzPOKZwCKUDYCshxEVQlTq0ZJSWgz0mg58DwXcWt1hWN2e7zbe_e9ozCUa7fz2_iyjCKUQpFhFik4UrV3IXiyZe_bjfH7CJUHY2U0Vh6MlX_GYuXmWGmJ6B-fCo5qKvAXTVhmWw</recordid><startdate>20121001</startdate><enddate>20121001</enddate><creator>Canacsinh, H.</creator><creator>Redondo, L. 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F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Marx-Type Solid-State Bipolar Modulator Topologies: Performance Comparison</atitle><jtitle>IEEE transactions on plasma science</jtitle><stitle>TPS</stitle><date>2012-10-01</date><risdate>2012</risdate><volume>40</volume><issue>10</issue><spage>2603</spage><epage>2610</epage><pages>2603-2610</pages><issn>0093-3813</issn><eissn>1939-9375</eissn><coden>ITPSBD</coden><abstract>The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and switch hold-off voltages has been made. A circuit topology is obtained as a compromise in terms of operating performance, trigger simplicity, and switching losses. A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 μs pulse width and 5 μs relaxation time into resistive, capacitive, and inductive loads.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPS.2012.2190944</doi><tpages>8</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Capacitors Circuits Electric currents Electric power Frequencies High-voltage (HV) techniques Insulated gate bipolar transistors Marx generators Modulation Optical switches Plasma physics power semiconductor devices Prototypes pulsed power systems Semiconductor diodes Topology |
| title | Marx-Type Solid-State Bipolar Modulator Topologies: Performance Comparison |
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